500 W POWER AMPLIFIER Search Results

MRF485

Abstract: MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 MRF475
Contextual Info: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors

Contextual Info: Whpl H E W L E T T W!HM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC/PPA 519 Series Features Description • Frequency Range: 5 to 500 MHz The 519 Series is a wideband, UTO—TO-8T GR0UND high-power RF amplifier for lower

Contextual Info: W mWihttl M PH Ea Wc kLaE rTdT Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 561 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz • High Output Power: +27.0 dBm Typ • Temperature Compensated

Contextual Info: W LETT mL'ho\ ltM HEW PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 504 Series Features • Frequency Range: 5 to 500 MHz • High Output Power: +21.0 dBm Typ • Temperature Compensated • 24-Volt Supply Applications

sp605

Contextual Info: SP60S HARRIS PRELIMINARY Intelligent Power Half-Bridge 500 VDC Driver M arch 1991 P inout Features • 500 Volt Maximum Rating 1 4 PIN D IP T O P VIE W • Ability to Interface and Drive N-Channel Power Devices • Floating Bootstrap Power Supply for Upper Rail Drive

Contextual Info: W hol HEW LETT mL'HM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC/PPA 509 Series Pin Configuration Features Description • Frequency Range: 5 to 500 MHz The 509 Series is a wideband single stage high power bipolar RF

BLL6H1214-500

Abstract: 800B
Contextual Info: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 01 — 20 January 2009 Objective data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information

BLA6H0912-500

Contextual Info: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 01 — 5 March 2009 Objective data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.

J122 SMD TRANSISTOR

Abstract: 800B MHz-2 BLA6H0912-500
Contextual Info: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 03 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.

Artesyn Technologies 700

Abstract: IEC60950-1 RFF500 SR-332
Contextual Info: RFF500/600/700 Series 24 Vin and 48 Vin single output DC-DC CONVERTERS • • • • • • • • 500 W, 600 W and 700 W Full-Brick 1 NEW Product High efficiency topology Wide temperature range, -40 °C to +100 °C @ full power High power density 127 W/in3

Contextual Info: T hal H E W L E T T 1"lim P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 505 Series Features • Frequency Range: 10 to 500 MHz • High Output Power: +20.0 dBm Typ • Temperature Compensated Applications

Contextual Info: Document 565 -1 Power Filter Inductor For Zetex ZXCD1000 500 W Class D Solution This toroidal choke was developed for Zetex Semiconductors ZXCD1000 High Fidelity Class D Amplifier Solution. This application provides 500 Wrms into 4 Ohms. The ED0006-AL is the low pass filter for the high frequency switching PWM signal, enabling recovery of the

mos rm3 data

Contextual Info: TPA0103 1.75-W 3-CHANNEL STEREO AUDIO POWER AMPLIFIER SLOS167A – JULY 1997 – REVISED MARCH 2000 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output

MOS RM3

Abstract: mos rm3 data 200 watt audio amplifier AC97 SLMA002 TPA0103 TPA0103PWP TPA0103PWPLE
Contextual Info: TPA0103 1.75-W 3-CHANNEL STEREO AUDIO POWER AMPLIFIER SLOS167A – JULY 1997 – REVISED MARCH 2000 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output

Contextual Info: Mini-Circuits - Specification for Amplifier - MNA-5 Amplifier print this page MNA-5 Frequency GAIN, dB Maximum Power, dBm Dynamic Range VSWR MHz DC Power NF dB Typ. IP3 dBm Typ. Thermal resistance CurØjc In Out rent Volt V. °C/W Typ. Typ. (mA) 500-2500

16250

Contextual Info: Mini-Circuits - Specification for Amplifier - MNA-3 Amplifier print this page MNA-3 Frequency GAIN, dB Maximum Power, dBm Dynamic Range VSWR MHz DC Power NF dB Typ. IP3 dBm Typ. Thermal resistance CurØjc In Out rent Volt V. °C/W Typ. Typ. (mA) 500-2500

Contextual Info: Mini-Circuits - Specification for Amplifier - MNA-2 Amplifier print this page MNA-2 Frequency GAIN, dB Maximum Power, dBm Dynamic Range VSWR MHz DC Power NF dB Typ. IP3 dBm Typ. Thermal resistance CurØjc In Out rent Volt V. °C/W Typ. Typ. (mA) 500-2500

Contextual Info: Mini-Circuits - Specification for Amplifier - MNA-4 Amplifier print this page MNA-4 Frequency GAIN, dB Maximum Power, dBm Dynamic Range VSWR MHz DC Power NF dB Typ. IP3 dBm Typ. Thermal resistance CurØjc In Out rent Volt V. °C/W Typ. Typ. (mA) 500-2500

voltage follower

Abstract: 741 voltage follower 748c MA748 748C dip MA748HM 748C mini dip A748 A748C A748M
Contextual Info: DIMinEi^SDL /xA748 O p e ration al A m plifier ABSOLUTE MAXIMUM RATINGS FEATURES Supply Voltage . ± 2 2 V Internal Power Dissipation Note 1 Metal C an . 500 m W

B0241A

Abstract: TIP 32 transistor transistor TIP 32 TIP 35 transistor BDX 241 transistor BD 246 80241A Tip 32 BD241 BD241B
Contextual Info: BD241, BD241A, BD241B, BD241C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE W ITH BD242A-C 40 W at 25 °C Case Temperature 3 A Rated Collector Current Min fT of 3 MHz at 10 V , 500 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted

D71Y1.5T1

Abstract: D70Y1.5T1
Contextual Info: SURFACE-MOUNT D70Y1.5T1 NPN POWER TRANSISTORS 30 VOLTS 1.5 AMP, 500 mWATTS Designed for audio frequency amplifier applications. Features: • Suitable for output stage of 3-W att amplifier • P d =1 ~ 2W Mounted on ceramic substrate • Small flat package

Contextual Info: TPS2080, TPS2081, TPS2082 DUAL TPS2085, TPS2086, TPS2087 QUAD w w w .t i.c om SLVS202B – SEPTEMBER 2000 – REVISED OCTOBER 2007 POWER-DISTRIBUTION SWITCHES FEATURES 1 • • • • • • • • • • • • 80-mΩ High-Side MOSFET Switch 500 mA Continuous Current per Channel

C2M60-28

Abstract: 5006L ASI10799
Contextual Info: C2M60-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500”6L FLG The C2M60-28 is Designed for Class A, B and C Power Amplifier Applications in Military UHF Radios. C A E C E 2x ØN FU LL R D FEATURES: E • PG = 10 dB Typical at 70 W/400 MHz

420 NPN Silicon RF Transistor

Abstract: gp 735
Contextual Info: UML125B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UML125B is Designed for Class A, B and C Power Amplifiers Operating in the 100 to 500 MHz Military Band. PACKAGE STYLE .400 8L FLG C Emitter - 4 FEATURES: D A B Collector- 2 places FULL R • PG = 7.0 dB Min. at 125 W/400 MHz