500 W POWER AMPLIFIER Search Results

Contextual Info: TPA0103 3-CHANNEL AUDIO POWER AMPLIFIER STEREO SINGLE-ENDED 500-mW AND MONO BTL 1.75 W SLOS16 7 -JU LY 1997 • Desktop Computer Amplifier Solution - 1.75-W Bridge Tied Load BTL Center Channel - 500-mW L/R Single-Ended Channels • Low Distortion Output

Contextual Info: BLL6H1214-500; BLL6H1214LS-500 LDMOS L-band radar power transistor Rev. 3 — 5 August 2013 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1.

high end amplifier schematics

Abstract: MOS RM3 mos rm3 data 200 watt audio amplifier single power diode package AC97 TPA0103 TPA0103PWP TPA0103PWPLE amplifier stereo
Contextual Info: TPA0103 3-CHANNEL AUDIO POWER AMPLIFIER STEREO SINGLE-ENDED 500-mW AND MONO BTL 1.75 W SLOS167 – JULY 1997 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output

AC97

Abstract: TPA0103 TPA0103PWP TPA0103PWPLE
Contextual Info: TPA0103 3-CHANNEL AUDIO POWER AMPLIFIER STEREO SINGLE-ENDED 500-mW AND MONO BTL 1.75 W SLOS167 – JULY 1997 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output

AC97

Abstract: TPA0103 TPA0103PWP TPA0103PWPLE
Contextual Info: TPA0103 3-CHANNEL AUDIO POWER AMPLIFIER STEREO SINGLE-ENDED 500-mW AND MONO BTL 1.75 W SLOS167 – JULY 1997 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output

power tr unit j122 5 pin

Abstract: power tr unit j122 PTVA120251EA lm7805 3A A 4562 L 4440 J233 AG J56-1
Contextual Info: PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

MRF485

Abstract: MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 MRF475
Contextual Info: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors

MRF485

Abstract: mrf477 MRF475 MRF476 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460
Contextual Info: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors

aif120

Abstract: LPS-41 LDO06C SMT40C2
Contextual Info: Embedded POWER AC-DC and DC-DC Power Conversion Solutions Contents AC–DC Power Supplies­ Low Power 3-500 W n Open frame/enclosed 1-4 outputs n External power adapters 9 17 Fanless/Conduction Cooled Up to 600 W n Enclosed 250 W Series n Enclosed 600 W Series

transistor c 2335

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF392 The RF Line NPN Silicon Push-Pull RF Power TVansistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. 125 W, 30 to 500 MHz CONTROLLED "Q”

MRF-393

Abstract: MRF393 equivalent transistor rf "30 mhz" AN 240 Motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF393 The RF Line NPN Silicon Push-Pull RF Power Transistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. 100 W, 30 to 500 MHz CONTROLLED ‘Q”

MRF587

Contextual Info: MRF587 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI MRF587 is Designed for High Linearity Power Amplifier Applications up to 500 MHz. A 45° 1 2 B 3 4 FEATURES: C D • PG = 16 dB Typical at 220 W/500 MHz • Low Noise Figure

Contextual Info: 135 MHz BW IF Diversity Receiver AD6679 Data Sheet FEATURES APPLICATIONS Parallel LVDS DDR outputs In-band SFDR = 82 dBFS at 340 MHz (500 MSPS) In-band SNR = 67.8 dBFS at 340 MHz (500 MSPS) 1.1 W total power per channel at 500 MSPS (default settings) Noise density = −153 dBFS/Hz at 500 MSPS

Contextual Info: Whpl H E W L E T T W!HM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC/PPA 519 Series Features Description • Frequency Range: 5 to 500 MHz The 519 Series is a wideband, UTO—TO-8T GR0UND high-power RF amplifier for lower

Contextual Info: W LETT mL'ho\ ltM HEW PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 504 Series Features • Frequency Range: 5 to 500 MHz • High Output Power: +21.0 dBm Typ • Temperature Compensated • 24-Volt Supply Applications

sp605

Contextual Info: SP60S HARRIS PRELIMINARY Intelligent Power Half-Bridge 500 VDC Driver M arch 1991 P inout Features • 500 Volt Maximum Rating 1 4 PIN D IP T O P VIE W • Ability to Interface and Drive N-Channel Power Devices • Floating Bootstrap Power Supply for Upper Rail Drive

Contextual Info: W hol HEW LETT mL'HM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC/PPA 509 Series Pin Configuration Features Description • Frequency Range: 5 to 500 MHz The 509 Series is a wideband single stage high power bipolar RF

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power TVansistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 M H z frequency range. • 100 W, 30 to 500 MHz CONTROLLED “Q”

TRANSISTOR 726

Abstract: 800B BLL6H1214-500 BV 726 B BV 726 C
Contextual Info: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information

BLL6H1214-500

Abstract: 800B
Contextual Info: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 01 — 20 January 2009 Objective data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information

TRANSISTOR 1300

Contextual Info: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information

pf0045a

Abstract: pf0045
Contextual Info: PF0045A/PF0065A-MOS FET Power Amplifier Module for AMPS Handy Phone Features Pin Arrangement • High efficiency PF0045A: 58 % typ. at 1.2 W PF0065A: 52 % typ. at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input • Low power control current: 500 jiA typ.

Contextual Info: PF0047A/PF0067A-MOS FET Power Amplifier Module for E-TACS Handy Phone Pin Arrangement Features • High Efficiency PF0047A: 58 % typ. at 1.2 W PF0067A: 52 % typ. at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input • Low power control current: 500 iA typ.

Contextual Info: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 04 — 10 May 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.