500 VOLTS SMPS Search Results

pnp 500v

Contextual Info: High Voltage Transistors PNP High Voltage Transistors 300 to 500 Volts The Zetex range of 300V to 500V transistors provide optimized high performance PNP specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to line

AO4480

Contextual Info: AO4480 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4480 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.

sony 134a

Abstract: AO4474 AO4474L smps design
Contextual Info: AO4474 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4474 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product

ao4718

Contextual Info: AO4718 30V N-Channel MOSFET SRFET General Description TM Features TM SRFET The AO4718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and

AON7700

Contextual Info: AON7700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON7700 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

622D

Abstract: 622d403 622d183
Contextual Info: LARGE CAN CAPACITORS UNITED ICHEMI-CONI TYPE 622D + 95°C Large Can Aluminum Capacitors Features — • Ideal for High Frequency SMPS Output Filtering • Symmetrical ESR ± 30% and Capacitance ( ± 20% ) • Excellent Ripple Current Capability • Metric Threads and Stud Mount Available

T flip flop IC

Abstract: uc3844 smps power supply SMPS CIRCUIT DIAGRAM for computers computer smps circuit diagram SMPS, Computers, CIRCUIT DIAGRAM SMPS CIRCUIT DIAGRAM USING TRANSISTORS AN-H29 smps ic 8 pin ic LOW POWER OFF LINE SMPS uc3844 reference smps
Contextual Info: LR745 Preliminary High Input Voltage SMPS Start-up Circuit Ordering Information Order Number / Package Maximum Input Voltage TO-92 TO-243AA* 450V LR745N3 LR745N8 *Same as SOT-89. Product supplied on 2000 piece carrier tape reels. Features General Description

600TD

Contextual Info: GenX3TM 600V IGBTs IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBTs for up to 5kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGN82N120B3H1

Abstract: IXGN82N120 IF110 IXGN82N120B3H
Contextual Info: Advance Technical Information IXGN82N120B3H1 GenX3TM 1200V IGBT w/ Diode VCES IC110 VCE sat = 1200V = 64A ≤£ 3.2V High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

120N120A3

Contextual Info: Preliminary Technical Information GenX3TM A3-Class IGBTs VCES = 1200V IC110 = 120A VCE sat ≤ 2.20V IXGK120N120A3 IXGX120N120A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

IXYN100N120B3H1

Abstract: ixyn100n120b3 123B16
Contextual Info: Advance Technical Information IXYN100N120B3H1 1200V XPTTM IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES IC110 VCE sat tfi(typ) Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES

Contextual Info: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers

IX6R11S3

Abstract: IX6R11P7
Contextual Info: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT with Diode VCES = 600V IC110 = 36A VCE sat ≤ 1.4V IXGH36N60A3D4 Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR

Contextual Info: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers

IXGH36N60A3D4

Contextual Info: GenX3TM 600V IGBT w/ Diode IXGH36N60A3D4 VCES = 600V IC110 = 36A VCE sat  1.4V Ultra Low Vsat PT IGBT for up to 5kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M 600 V

Contextual Info: 1800 COILS, CHOKES, & INDUCTORS 1800 01M EC D N SERVING YOU SINCE 1972 WITH KNOWLEDGE & SENSIBLE PRODUCTS 1900 CHRIS LANE / ANAHEIM, CA 92085 / 714 634-2220 / FAX (714) 634-0905 / 800-394-2234 SWITCH MODE POWER SUPPLY FILTER INDUCTORS • • • • Minimum possible size • Low profile

Contextual Info: IXGH48N60A3D1 GenX3TM 600V IGBT w/Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V

IX6R11P7

Contextual Info: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers

IXYH40N120C3

Contextual Info: Advance Technical Information IXYH40N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

20N100A

Abstract: IXGH20N100A IXGH20N100A3 IXGP20N100A3
Contextual Info: Advance Technical Information GenX3TM 1000V IGBTs VCES = 1000V IC90 = 20A VCE sat ≤ 2.3V IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

IXGR72N60A3U1

Contextual Info: IXGR72N60A3U1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) Ultra-low Vsat PT IGBTs for up to 5kHz switching Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBTs VCES = 600V IC90 = 320A VCE sat ≤ 1.6V IXGK320N60B3 IXGX320N60B3 Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

IXGX72N60C3H1

Abstract: PLUS247
Contextual Info: IXGX72N60C3H1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBT for 40-100kHz Switching = = ≤£ = 600V 72A 2.5V 55ns PLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ