50 OHM MICROSTRIP LINE Search Results

Contextual Info: The receptacles shown below have .010" diameter contacts for good electrical transition to narrow microstrip lines. The reduced-diameter insulators are extended beyond the flange face to carry 50 ohm impedance through the microstrip package wall. All have captive contacts.

TUNNEL DIODE

Abstract: 7700J "tunnel diode" tunnel detector tunnel diode high frequency
Contextual Info: Modular Tunnel Diode Detectors 7700J Series V2.00 Mechanical Outline Top View Description The 7700J series provides a minimized, hermetically sealable, 50 ohm module designed especially for TEM stripline and microstrip media. These detectors are ideal components for dense packaging requirements.

Contextual Info: an A M P co m p a n y Modular Biased Schottky Detectors 7709J Series V2.00 Mechanical Outline Top View Description The 7709J series provides a minimized, hermetically sealable, 50 ohm module designed especially for TEM stripline and microstrip media. These detectors are ideal

7744J0020

Abstract: 7744N
Contextual Info: 7744J and 7 7 4 4 N Se rie s D escription The 7744J series provides a minimized, hermetically sealable, 50 ohm module designed especially for TEH stripline and microstrip media. These detectors are ideal components for dense packaging requirements. The 7744N series features additional circuit area for increased

7700N

Contextual Info: 7700J and 7700N Series Description The 7700J series provides a minimized, hermetically seaJabie, 50 ohm module designed especially for TEM stripline and microstrip media. These detectors are ideal components for dense packaging requirements. The 7700N series features additional circuit area for increased RF-tovideo isolation typically greater than 21dB as well as space for

tunnel diode

Abstract: tunnel diode high frequency tunnel diode specifications
Contextual Info: M a n A M P c o m p an y Modular Tunnel Diode Detectors 7700J Series V2.00 Description Mechanical Outline Top View The 7700J series p rov id es a m inim ized, herm etically sealable, 50 ohm m odule design ed especially for TEM stripline and microstrip media. These detectors are ideal

7715N

Contextual Info: 7715J and 7715N Series Description The 77I5J series provides a minimized, hermetically sealable, 50 ohm module designed especially for TEM stripline and microstrip media, these detectors make ideal components for dense packaging require­ ments. The 7715N series features additional circuit area for increased RFto-video isolation typically greater than 21 dB as well as space for

Contextual Info: 7709J and 7709N Series Description The 7709J series provides a minimized, hermetically sealable, 50 ohm module designed especially for TEM stripline and microstrip media. These detectors are ideal components for dense packaging require­ ments. The 7709N series features additional circuit area for increased RF-tovideo isolation typically greater than 21dB as well as space for

ECUV1H150JCV

Abstract: FR408 MMG3006NT1 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 2, 3/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A, small - signal,

MMG3014NT1

Abstract: C0805C209J5GAC ERJ-3GEY0R00V A113 A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 0, 4/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

Z5 1512

Contextual Info: Document Number: MMG3014NT1 Rev. 4, 8/2014 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a general purpose amplifier that is internally input

135-869

Abstract: ML200C MMG3003NT1 A113 A114 A115 AN1955 C0603C103J5RAC C101 hk160822nj
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 7, 3/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

AVX 6295

Abstract: 239 avx ML200C A113 A114 A115 AN1955 MMG3003NT1 A 118827 0805K680JBT
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MMG3003NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally

MMG3006N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 0, 1/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A, small - signal,

IPC 6012

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 3, 8/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

154754

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 4, 5/2006 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

Z5 1512

Abstract: C0805C209J5GAC
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 2, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input

Z5 1512

Abstract: ERJ-3GEY0R00V MMG3014NT1 567 tone A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 1, 9/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 8, 2/2012 MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,

MMG3006NT1

Abstract: AVX Manufacture Label ECUV1H150JCV
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input

M3111N

Abstract: 22A114 irl 3710 m3111
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMH3111NT1 Rev. 4, 9/2012 Heterostructure Field Effect Transistor GaAs HFET MMH3111NT1 Broadband High Linearity Amplifier The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A,

Amplifier SOT-89 c4

Abstract: ML200C Tower Mounted Amplifiers Schematic sot-89 805 898-3 bipolar transistor ghz s-parameter bk2125 Z2 J diode TRANSISTOR Z4 SOT c5 87
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 5, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad