5.8 GHZ AMPLIFIER 10W Search Results

MGA-495940-02

Abstract: s band gan 10W 5.8 ghz amplifier 10w spectrum emission mask
Contextual Info: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet December 2008 Features: • • • • • • • • 12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power

MGA-495940-02

Abstract: Sk 4467
Contextual Info: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier New Product Data Sheet December 2008 Features: • • • • • • • • 12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power

Contextual Info: Created on 02/05/08 6-18 GHz High Power Amplifier • • • • • • • • 10W typ. From 6 to 18 GHz 45 dB Gain 45 dBm IP3 7-14 dB NF 14-16V DC Supply 13A Max -10 to 50 C0 case Current/temp/voltage protection • 163 x 95 x 25 mm AMF-6B-06001800-120-40P

5.8GHz

Abstract: 5.8 ghz amplifier 10w MGFC40V5258
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8

5.8 ghz amplifier 10w

Abstract: MGFC40V5258
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8

5.8 ghz amplifier 10w

Abstract: Gaas Power Amplifier 10W
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8

5.8 ghz amplifier 10w

Contextual Info: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet November 2008 Features: •        12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power

Contextual Info: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet November 2008 Features: •        12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power

Contextual Info: < C band internally matched power GaAs FET > MGFC40V5258 5.2 - 5.8 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC40V5258 5.2 - 5.8 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic

AMF-6B-08001800-100-40P

Abstract: miteq amf
Contextual Info: Created on 02/05/08 8-18 GHz High Power Amplifier • • • • • • • • 10W typ. From 8 to 18 GHz 45 dB Gain 45 dBm IP3 6-10 dB NF 14-16V DC Supply 13A Max -10 to 50 C0 case Current/temp/voltage protection • 163 x 95 x 25 mm AMF-6B-08001800-100-40P

Contextual Info: Created on 05/14/08 8-12 GHz High Power Amplifier • • • • • • • • 10W typ. From 8 to 12 GHz 45 dB Gain 45 dBm IP3 10 dB NF 14-16V DC Supply 13A Max -10 to 50 C0 case Current/temp/voltage protection • 163 x 95 x 25 mm AMF-6B-08001200-110-40P

Contextual Info: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK A Selection of Hittite Components for Broadband Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation

EIC5964-10

Contextual Info: EIC5964-10 5.90-6.40 GHz 10-Watt Internally-Matched Power FET FEATURES • • • • • • • • 5.90 – 6.40 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency

Contextual Info: TQP369185 DC-6 GHz Gain Block Applications • • • • • Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless SOT-89 Package Product Features • • • • • • • • • Functional Block Diagram DC-6000 MHz Robust Class 2 >2000V HBM ESD Rating

Contextual Info: TQP369185 DC-6 GHz Gain Block Applications •     Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features          SOT-89 Package Functional Block Diagram GND Cascadable Gain Block

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Contextual Info: TQP369185 DC-6 GHz Gain Block Applications •     Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features          SOT-89 Package Functional Block Diagram GND Cascadable Gain Block

Contextual Info: TQP369185 DC-6 GHz Gain Block Applications •     Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features          SOT-89 Package Functional Block Diagram GND Cascadable Gain Block

HMC717LP3E

Abstract: HMC476SC70E hmc688LP4E rf transceiver 5.9 ghz uwb transceiver WiMAX RF Transceiver HMC639ST89E HMC394LP4E hmc215lp4e HMC408
Contextual Info: A Selection of Hittite Components for BROADBAND, DC - 11 GHz – CATV, DBS, VoIP, WiMAX, WiBro & WLAN Function Low Noise Amplifier Driver Amplifier & Gain Block Linear & Power Amplifier Attenuator: Analog Attenuator: Digital Mixer 0.005 - 2.15 GHz CATV & DBS

Contextual Info: EIC5964-10 5.90-6.40 GHz 10-Watt Internally-Matched Power FET Issued Date: 06-22-04 FEATURES • • • • • • • • 5.90 – 6.40 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression

Contextual Info: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •

ATF-54143-BLKG

Abstract: ATF54143 a 1458 atf-54143-tr1g diagram transistor tt 2140 ATF-54143BLKG L6 sot 665 l0746
Contextual Info: ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF‑54143 is a high dynamic range, low noise, E-PHEMT housed in a 4‑lead SC-70 SOT‑343 surface mount plastic package.

ATF-54143-TR1G

Abstract: l0746 A004R ATF-54143 C0159 ATF-54143 application notes transistor c4 5.8 ghz amplifier 10w
Contextual Info: ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF‑54143 is a high dynamic range, low noise, E-PHEMT housed in a 4‑lead SC-70 SOT‑343 surface mount plastic package.

marking r4 SOT343

Abstract: a 1458 ATF54143 L6 sot 665 l0746
Contextual Info: ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF‑54143 is a high dynamic range, low noise, E-PHEMT housed in a 4‑lead SC-70 SOT‑343 surface mount plastic package.