5.6 MARKING Search Results

c151A

Abstract: FDMS3602S
Contextual Info: Preliminary Datasheet FDMS3602S Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 2.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A

fdms3600

Contextual Info: Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 1.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally

3040P

Abstract: 3040pt mbr3050pt-mbr3060pt 3035PT 3050PT 3060PT 2923 MARKING
Contextual Info: SENSITRON MBR3030PT -MBR3060PT SEMICONDUCTOR Technical Data Data Sheet 2923, Rev.- MBR3030PT-MBR3060PT 30A SCHOTTKY BARRIER RECTIFIER Mechanical Data: • Case: Molded Plastic • Polarity: As Marked on Body • Weight: 5.6 grams approx. • Mounting Position: Any • Marking: Type Number

3060PT

Abstract: 3035PT 3045P 2923 MARKING
Contextual Info: SENSITRON MBR3030PT -MBR3060PT SEMICONDUCTOR Technical Data Data Sheet 2923, Rev.- MBR3030PT-MBR3060PT 30A SCHOTTKY BARRIER RECTIFIER Mechanical Data: • Case: Molded Plastic • Polarity: As Marked on Body • Weight: 5.6 grams approx. • Mounting Position: Any • Marking: Type Number

Contextual Info: SMD POWER CHOKE CSS1375F MECHANICAL DIMENSIONS Unit:mm Recommended Patterns MARKING Inductance (uH) TEST FREQ. (KHz) CSS1375F-1R2N-LFR 1R2 1.2 1 CSS1375F-2R7N-LFR 2R7 2.7 1 1 PART Number. CSS1375F-3R9N-LFR 3R9 3.9 CSS1375F-5R6N-LFR 5R6 5.6 1 CSS1375F-6R8N-LFR

100241k

Abstract: SR0603 Marking AE 235 MW75C SR0603-221K
Contextual Info: SPECIFICATION FOR APPROVAL REF : PAGE: 1 PROD. SMD POWER INDUCTOR NAME ABC'S DWG NO. SR0603□□□□L□ ABC'S ITEM NO. Marking A 101 Ⅰ﹒ CONFIGURATION & DIMENSIONS： Dot is start winding & Inductance code : 5.6±0.2 m/m B : 3.7±0.3 m/m C : 2.3 ref.

polysol 155 0,16

Abstract: SR0604 sr0604100ml sr0604101k SR0604100M sr06041 SR0604221KL MW-75 marking code abc
Contextual Info: SPECIFICATION FOR APPROVAL REF : 20090728-B PAGE: 1 PROD. ABC'S DWG NO. SMD POWER INDUCTOR NAME SR0604□□□□L□-□□□ ABC'S ITEM NO. Marking A 101 Ⅰ﹒CONFIGURATION & DIMENSIONS： Dot is start winding & Inductance code : 5.6±0.2 m/m B : 4.5±0.3

Z02W5.6V

Contextual Info: SEMICONDUCTOR Z02W5.6V MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 5.6X No. 1 Item Marking Device Mark 5.6 Z02W5.6V Voltage Grade X X,Y,Z * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

MYS125

Abstract: MYS380 MYS40 MYS80 MYS250 mys-80
Contextual Info: MYS40 . MYS380 MYS40 . MYS380 Surface Mount Si-Bridge-Rectifiers Si-Brückengleichrichter für die Oberflächenmontage Nominal current Nennstrom 0.2 1.8 -0.1 Version 2006-05-12 1.27 3.6 +0.2 5.6 +0.2 0.5 A Alternating input voltage Eingangswechselspannung

Contextual Info: TCP-3056N 5.6 pF Passive Tunable Integrated Circuits PTIC Introduction ON Semiconductor’s PTICs have excellent RF performance and power consumption, making them suitable for any mobile handset or radio application. The fundamental building block of our PTIC

marking 05 PANJIT

Contextual Info: BZX584B5V1 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 5.1~5.6 Volts 200 mWatts POWER FEATURES • Planar Die construction 0.050 1.25 0.045(1.15) • 200mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.014(0.35) 0.009(0.25)

Contextual Info: TCP-3156H 5.6 pF Passive Tunable Integrated Circuits PTIC Introduction ON Semiconductor’s PTICs have excellent RF performance and power consumption, making them suitable for any mobile handset or radio application. The fundamental building block of our PTIC

sot23 transistor marking y2

Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0

MBR3060PTG

Contextual Info: SENSITRON MBR3030PT - G -MBR3060PT-G SEMICONDUCTOR Green Products Technical Data Data Sheet 3491, Rev.- MBR3030PT-G-MBR3060PT-G 30A SCHOTTKY BARRIER RECTIFIER Mechanical Data: • Case: Molded Plastic • Polarity: As Marked on Body • Weight: 5.6 grams approx. • Mounting

Contextual Info: BZT52-B5V1FN2 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 250 mWatts POWER 5.1~5.6 Volts 0.042 1.05 0.037(0.95) 0.021(0.55) • Zener Voltages from 5.1-5.6V 0.026(0.65) • 250mW Power Dissipation 0.017(0.45) • Planar Die construction 0.022(0.55)

Contextual Info: BZT52-B5V1FN2 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 250 mWatts POWER 5.1~5.6 Volts 0.042 1.05 0.037(0.95) 0.021(0.55) • Zener Voltages from 5.1-5.6V 0.026(0.65) • 250mW Power Dissipation 0.017(0.45) • Planar Die construction 0.022(0.55)

MYS40

Abstract: MYS80 MYS125 MYS250 MYS380
Contextual Info: MYS40 . MYS380 Surface Mount Si-Bridge Rectifiers Si-Brückengleichrichter für die Oberflächenmontage Version 2004-10-01 1.8 0.2 -0.1 Nominal current Nennstrom 3.6 1.27 +0.2 5.6 +0.2 0.5 A Alternating input voltage Eingangswechselspannung 40…380 V Plastic case

K3566

Abstract: K3566 transistor K3566 data sheet 2sk3566 transistor k3566 K3566 data equivalent k3566 K3566 equivalent
Contextual Info: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)

k2718

Abstract: transistor k2718 transistor 2sk2718 2sk2718
Contextual Info: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)

Contextual Info: TCP-3056N Advance Information 5.6 pF Passive Tunable Integrated Circuits PTIC Introduction ON Semiconductor’s PTICs have excellent RF performance and power consumption, making them suitable for any mobile handset or radio application. The fundamental building block of our PTIC

MAL219691103E3

Contextual Info: 196 HVC www.vishay.com Vishay BCcomponents Hybrid Storage Aluminum Capacitors FEATURES • Polarized electrochemical storage capacitor with high capacity and energy density • Voltage flexibility 1.4 V single cell to 2.8 V / 4.2 V / 5.6 V / 7.0 V / 8.4 V (multiple cells)

MAL219691103E3

Contextual Info: 196 HVC www.vishay.com Vishay BCcomponents Hybrid Storage Aluminum Capacitors FEATURES • Polarized electrochemical storage capacitor with high capacity and energy density • Voltage flexibility 1.4 V single cell to 2.8 V/ 4.2 V/5.6 V/7.0 V/8.4 V (multiple cells)

Contextual Info: Ordering number : ENN7500 2SJ650 2SJ650 P-Channl Silicon MOSFET DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2063A [2SJ650] 4.5 2.8 5.6 18.1 16.0 3.2 3.5 7.2 10.0 2.4

2SK2718

Abstract: transistor 2sk2718
Contextual Info: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)