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    5.6 MARKING Search Results

    5.6 MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EC13

    Abstract: EIA-481A
    Contextual Info: EC13 Series EC13 • HCMOS/TTL output • 3.3V supply voltage • 8 pin DIP package • Stability to 20ppm • Custom lead length, gull wing options available H 5.6 L 13.2 W 13.2 OSCILLATOR ELECTRICAL SPECIFICATIONS Frequency Range 500.000kHz to 106.250MHz


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    20ppm 000kHz 250MHz 000MHz 001MHz 100ppm, EC13 EIA-481A PDF

    ISC-1812

    Contextual Info: ISC-1812 Vishay Dale Wirewound, Surface Mount, Molded, Shielded Inductors FEATURES STANDARD ELECTRICAL SPECIFICATIONS IND. H 0.1 0.1 0.2 0.2 0.2 0.3 0.3 0.4 0.5 0.6 0.7 0.8 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10.0 12.0 15.0 18.0 22.0 27.0 33.0


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    ISC-1812 11-Mar-11 ISC-1812 PDF

    Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 5.6 µH ±20% Rated Current ∆T = 40 K IR 3.6 A max. Saturation Current |ΔL/L| < 20% Isat 9.0 A typ. DC Resistance @ 20°C


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    7R0M

    Abstract: smd marking CA 2R2 choke lcr meter circuit HP4284A CSH1250S-3R1M
    Contextual Info: Frontier Electronics Corp. 667 E. COCHRAN STREET, SIMI VALLEY, CA 93065 TEL: 805 522-9998 FAX: (805) 522-9989 E-mail: frontiersales@frontierusa.com Web: frontierusa.com SMD Power Choke—CSH1250S series A. Electrical specifications: Part No. Marking L (uH) ± 30%


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    Choke--CSH1250S CSH1250S-R80M CSH1250S-1R4M CSH1250S-2R2M CSH1250S-3R1M CSH1250S-4R2M CSH1250S-5R5M CSH1250S-7R0M 100KHz 7R0M smd marking CA 2R2 choke lcr meter circuit HP4284A CSH1250S-3R1M PDF

    KL32

    Abstract: LFC32
    Contextual Info: INDUCTORS FERRITE CORE W L WIREWOUND MOLDED CHIP INDUCTOR LFC32 KL321 4 1 STRUCTURE 1 2 3 4 H tH Ferrite core Winding wire Terminal copper base) Molded resin tW d 2 3 IDENTIFICATION COATING COLOR Silver Black 3 digit Inductance Code LFC32 / KL32 MARKING


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    LFC32 KL321) LFC32 D-25578 KL32 PDF

    TR13

    Contextual Info: Package Details - SMDIP Mechanical Drawing Part Marking: Full Part Number Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (10-December 2002) Package Details - SMDIP Tape Dimensions and Orientation (Dimensions in mm.)


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    10-December EIA-481-2-A 10-March TR13 PDF

    RF2045

    Abstract: NE AND micro-X
    Contextual Info: RF2045 GENERAL PURPOSE AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic GND 4 Features „ „ „ „ MARKING - C5 SI GN S „ DC to 6000MHz Operation Internally matched Input and Output 14dB Small Signal Gain +32dBm Output IP3


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    RF2045 RF2045 RF204X DS070403 NE AND micro-X PDF

    Contextual Info: ELECTRONIC EQUIPMENT FILM CAPACITOR RoHS Compliant @Maximum operating temperature 105C. @Allowable temperature rise 15K max. @Large capacitance of TACB series. ?SPECIFICATIONS Items Characteristics -40 to +105C 450 to 1000Vdc P5% J or P10%(K) No degradation, at 150% of rated voltage shall be applied for 60 seconds.


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    1000Vdc 30000MO 10000OF 1TACC102V155SRLFZ0 FTACC102V185STLJZ0 FTACC102V225SULWZ0 FTACC102V275SULWZ0 TACC2W565S TACC2W685S TACC2W825S PDF

    IRF510 application note

    Abstract: IRF510 irf510pbf sihf510
    Contextual Info: IRF510, SiHF510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.54 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the


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    IRF510, SiHF510 O-220AB 11-Mar-11 IRF510 application note IRF510 irf510pbf PDF

    Contextual Info: IRF510S, SiHF510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature


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    IRF510S, SiHF510S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    RCWP25

    Abstract: rCWP0402 RCWP055
    Contextual Info: RCWP www.vishay.com Vishay Dale Thick Film Chip Resistors, Industrial FEATURES MECHANICAL SPECIFICATIONS Resistive element Ruthenium oxide Encapsulation Epoxy Substrate 96 % alumina Termination Solder-coated nickel barrier Solder finish Pure tin or tin/lead solder alloy


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    MIL-PRF-55342 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 RCWP25 rCWP0402 RCWP055 PDF

    ruthenium oxide

    Abstract: 8P20 RCWPM Jumper (Military M32159)
    Contextual Info: RCWPM Military M/D55342 www.vishay.com Vishay Dale Thick Film Chip Resistors, Military/Established Reliability MIL-PRF-55342 Qualified, Type RM FEATURES MECHANICAL SPECIFICATIONS Resistive element Encapsulation Substrate Termination Solder finish Ruthenium oxide


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    M/D55342) MIL-PRF-55342 MIL-PRF-55342 MIL-PRF-32159 M32159) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. ruthenium oxide 8P20 RCWPM Jumper (Military M32159) PDF

    CERA-MITE Y5U

    Abstract: 440L CAPACITOR 20VL 30LV 440L 25YD 30LVSD
    Contextual Info: 440L, 30LV, 30LVS, 25Y, 125L, 20VL Series Vishay Cera-Mite AC Line Rated Disc Capacitors X & Y EMI/RFI FILTER TYPES: ACROSS-THE-LINE, LINE-BY-PASS, ANTENNA COUPLING Vishay Cera-Mite AC Line Rated Discs are rugged, high voltage capacitors specifically designed and tested


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    30LVS, 08-Apr-05 CERA-MITE Y5U 440L CAPACITOR 20VL 30LV 440L 25YD 30LVSD PDF

    173D

    Abstract: 173D106X0002U 173D156X0002V 173D226X0002V 173D336X0002V 173D475X0004U 173D476X0002W 173D685X0002U 173D685X0004U 173D686X0002W
    Contextual Info: 173D Vishay Sprague TANTALEX Solid-Electrolyte Capacitors, Axial-Leaded, Molded-Case FEATURES • Miniature axial-lead capacitors available in 5 sizes • Precision molded in gold colored, flame retardant, thermosetting epoxy resin • Laser marked for improved legibility and tapered end of


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    13-Jun-02 173D 173D106X0002U 173D156X0002V 173D226X0002V 173D336X0002V 173D475X0004U 173D476X0002W 173D685X0002U 173D685X0004U 173D686X0002W PDF

    diode smd ED 68

    Abstract: pm42s 096 diode smd ED 84 diode ED 21 diode smd ED 74 ED 08 PM5022H-7R8M-RC diode ED 84 PM105SB-101K-RC ed smd
    Contextual Info: INDUCTIVE COMPONENTS Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers October, 2008 Electrical and Physical Changes to Specified JW Miller SMD Models


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    Contextual Info: RF/Microwave C0G NP0 Capacitors (RoHS) Ultra Low ESR, “U” Series, C0G (NP0) Chip Capacitors GENERAL INFORMATION are met on each value producing lot to lot uniformity. Sizes available are EIA chip sizes 0402, 0603, 0805, and 1210. “U” Series capacitors are C0G (NP0) chip capacitors specially designed for “Ultra” low ESR for applications in the


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    Si4670DY-T1-GE3

    Contextual Info: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0


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    Si4670DY 2002/95/EC 11-Mar-11 Si4670DY-T1-GE3 PDF

    TR6143

    Abstract: advantest TR6143 HP346C FDK gps antenna GRM1554C WK72475 HP8562A HP483A PC8211TK diagram tr6143
    Contextual Info: Technical Note APPLICATION FOR 1.575 GHz GPS WITH µPC8211TK, µPC8215TU, AND µPC8226TK Reference Design of Evaluation Board for 1.575 GHz LNA Document No. PU10570EJ01V0TN 1st edition Date Published July 2005 CP(K)  NEC Compound Semiconductor Devices, Ltd. 2005


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    PC8211TK, PC8215TU, PC8226TK PU10570EJ01V0TN TR6143 advantest TR6143 HP346C FDK gps antenna GRM1554C WK72475 HP8562A HP483A PC8211TK diagram tr6143 PDF

    GNR 10D431K

    Abstract: 10D471K 10D681K gnr 10D561k 10D180K 10d271k 10D911K 10D511K 10D241K 10D470K
    Contextual Info: VARISTORS Catalog number system G N R Product Series GNR: 2 Element Size 05 :ψ5mm General Nonlinear Resistor 07 :ψ7mm 10 :ψ10mm 14 :ψ14mm 20 :ψ20mm 25 :ψ25mm D Type D: Disk S: Square B: Block 2 1 K * * * Nominal Voltage at Tolerance 1mA DC The first two digits are


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    Contextual Info: Multi-Layer Ceramic Chip Inductors LCMC Series APPLICATIONS • High Frequency Applications: – Mobile Communications – WLAN – PHS – EMI Counter measure in High Frequency Circuits – Computer Communication FEATURES • For high frequency applications


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    pm2110-120k

    Abstract: pm2110-470k PM2110 PM2110-680K-RC PM2110-120K-RC PM211
    Contextual Info: *R *RoHS oH C S OM CO P M LIA PL N IA T NT Features Applications • Formerly J.W.Miller model ■ Input/output of DC/DC converters ■ Current rating up to 22.7 A ■ Industrial electronics ■ Toroidal core ■ Power supplies for: • Portable communications equipment


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    PM2110 PM2110-1R0M-RC PM2110-1R2M-RC PM2110-1R5M-RC PM2110-1R8M-RC PM2110-2R2M-RC PM2110-2R7M-RC PM2110-3R3M-RC PM2110-3R9M-RC PM2110-4R7M-RC pm2110-120k pm2110-470k PM2110-680K-RC PM2110-120K-RC PM211 PDF

    STM6600

    Abstract: STM6601 STM6601CM2DDM6F STM6600DA55DM6F stm6600da55dm STM660
    Contextual Info: STM6600, STM6601 Smart push-button on/off controller with Smart Reset and power-on lockout Datasheet − production data Features • Operating voltage 1.6 V to 5.5 V ■ Low standby current of 0.6 µA ■ Adjustable Smart Reset™ assertion delay time


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    STM6600, STM6601 STM6600) STM6601) STM6600 STM6601 STM6601CM2DDM6F STM6600DA55DM6F stm6600da55dm STM660 PDF

    MMQA6V2T3

    Abstract: 318F MMQA12VT1 MMQA13VT1 MMQA15VT1 MMQA18VT1 MMQA20VT1 MMQA21VT1 MMQA22VT1 MMQA24VT1
    Contextual Info: MMQA Quad Common Anode Series Preferred Devices SC−74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection http://onsemi.com This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is


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    SC-74 MMQA6V2T3 318F MMQA12VT1 MMQA13VT1 MMQA15VT1 MMQA18VT1 MMQA20VT1 MMQA21VT1 MMQA22VT1 MMQA24VT1 PDF

    SI4431CDY

    Contextual Info: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    Si4431CDY Si4431CDY-T1-E3 Si4431CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF