5.5 UNS Search Results

E2S-W11

Abstract: E2S-W11B E2S-Q13 Y92E-D1R6 E2S-Q11 E2S-Q12 E2SB E2S-W12 E2S-W21 E2S-W22
Contextual Info: E2S 2002 .FM Seite 44 Mittwoch, 3. April 2002 6:30 18 Compact Square Inductive Proximity Sensor World's Smallest Square Sensor with h Built-in Amplifier Features World's Smallest Sensor with 5.5 mm Built-in Amplifier 5.5 mm x 5.5 mm type contributes to smaller, space-saving

MN101C457

Abstract: QFP044-P-1010E
Contextual Info: MN101C457 Type MN101C457 ROM x× 8-bit 16 K RAM (×× 8-bit) 0.5 K Package QFP044-P-1010E *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)*

AD10

Abstract: LQFP080-P-1414A MN101D08E MN101DF08G
Contextual Info: MN101D08E Type VTR Servo MN101D08E ROM x× 8-bit 80 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A *Lead-free 0.1397 µs (at 4.0 V to 5.5 V, 14.32 MHz) 71.5 µs (at 2.7 V to 5.5 V fixed to 14.32 MHz internal frequency division) 61 µs (at 2.5 V to 5.5 V, 32.768 kHz)

Contextual Info: MN101C457 Type MN101C457 ROM x× 8-bit 16 K RAM (×× 8-bit) 0.5 K Package QFP044-P-1010F *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)*

AD10

Abstract: MN101D09E MN101DF09G QFP100-P-1818B
Contextual Info: MN101D09E Type VTR Servo MN101D09E ROM x× 8-bit 80 K RAM (×× 8-bit) 2K Package QFP100-P-1818B *Lead-free 0.1397 µs (at 4.0 V to 5.5 V, 14.32 MHz) 71.5 µs (at 2.7 V to 5.5 V fixed to 14.32 MHz internal frequency division) 61 µs (at 2.5 V to 5.5 V, 32.768 kHz)

LQFP080-P-1414A

Abstract: MN101D03D MN101DF03D
Contextual Info: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)*1 125 µs (at 2.0 V to 5.5 V, 32 kHz)*2 1

AD10

Abstract: AD11 MN101D07H
Contextual Info: MN101D07H VTR Servo Type MN101D07H ROM x× 8-bit 160 K RAM (×× 8-bit) 5K Package LQFP112-P-2020 *Lead-free 0.1397 µs (at 4.0 V to 5.5 V, 14.32 MHz) 71.5 µs (at 3.0 V to 5.5 V fixed to 14.32 MHz internal frequency division) 61 µs (at 2.2 V to 5.5 V, 32.768 kHz)

Contextual Info: MN101C62D , MN101C62F Type MN101C62D MN101C62F ROM x× 8-bit 64 K 96 K RAM (×× 8-bit) 2K Package Minimum Instruction Execution Time 4K LQFP080-P-1414A *Lead-free Standard: 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 1.00 µs (at 2.0 V to 5.5 V, 2 MHz)*

Contextual Info: MN101C57C , MN101C57D Type MN101C57C MN101C57D ROM x× 8-bit 48 K 64 K RAM (×× 8-bit) 2K Package 2K QFP100-P-1818B *Lead-free Minimum Instruction Execution Time 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 62.5 µs (at 2.0 V to 5.5 V, 32 kHz)*

VSS240

Contextual Info: MN101C62D , MN101C62F Type MN101C62D MN101C62F ROM x× 8-bit 64 K 96 K RAM (×× 8-bit) 2K Package Minimum Instruction Execution Time 4K LQFP080-P-1414A *Lead-free Standard: 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 1.00 µs (at 2.0 V to 5.5 V, 2 MHz)*

MN101C94A

Abstract: MN101CF94D QFP044-P-1010F
Contextual Info: MN101C94A Type MN101C94A ES (Engineering Sample available) ROM (x× 8-bit) 32 K RAM (×× 8-bit) 1K Package QFP044-P-1010F *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)*

m55339

Abstract: M55339/02-30001 jack p10 DC-18GHz 901-9216-SF 901-9216
Contextual Info: Amphenol SMA In-Series Adapters Fig. 1 Fig. 2 1.14 VSWR max 1.14 VSWR max .500 12.7 .720(18.2) .125 (3.2) .250 (6.4) .218(5.5) across 2 flats .250-36 UNS-2A .312(7.9) hex. .218(5.5) across 2 flats SMA Straight Adapter, Plug-Jack 901-9216 Gold Plated 901-9216-SF

M38507F8SP

Contextual Info: MITSUBISHI MICROCOMPUTERS 3850 Group Spec. H SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION ●Power source voltage In high-speed mode . 4.0 to 5.5 V (at 8 MHz oscillation frequency) In middle-speed mode . 2.7 to 5.5 V

Contextual Info: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)*1 125 µs (at 2.0 V to 5.5 V, 32 kHz)*2 *1 The lower limit for operation guarantee for flash memory built-in type is 4.5 V.

Contextual Info: Super-compact Proximity Sensor E2S CSM_E2S_DS_E_5_1 Advanced Performance and Wide Range of Selections in a Supercompact Size • Only 5.5 x 5.5 mm with a built-in Amplifier. • Maximum sensing distance: 2.5 mm. Stable detection even with workpiece fluctuations.

E2S-Q11

Abstract: E2S-Q12 E2S-Q21 E2S-Q22 E2S-W11 E2S-W12 E2S-W13 E2S-W14 E2S-W21 E2S-W22
Contextual Info: Super-compact Proximity Sensor E2S CSM_E2S_DS_E_3_1 Advanced Performance and Wide Range of Selections in a Supercompact Size • Only 5.5 x 5.5 mm with a built-in Amplifier. • Maximum sensing distance: 2.5 mm. Stable detection even with workpiece fluctuations.

Contextual Info: Super-compact Proximity Sensor E2S CSM_E2S_DS_E_7_1 Advanced Performance and Wide Range of Selections in a Supercompact Size • Only 5.5 x 5.5 mm with a built-in Amplifier. • Maximum sensing distance: 2.5 mm. Stable detection even with workpiece fluctuations.

W11B

Abstract: E2S-Q16 E2S-Q25 E2S-W21 npn transistor w16 E2S-W13 E2S-W15 E2S-Q11 E2S-Q12 E2S-Q21
Contextual Info: Super-compact Proximity Sensor E2S CSM_E2S_DS_E_6_1 Advanced Performance and Wide Range of Selections in a Supercompact Size • Only 5.5 x 5.5 mm with a built-in Amplifier. • Maximum sensing distance: 2.5 mm. Stable detection even with workpiece fluctuations.

npn transistor w16

Abstract: transistor w16 transistor w26 npn transistor w26 npn transistor w15 w11b W16 transistor TRANSISTOR w22 w25 transistor TRANSISTOR W25
Contextual Info: Subminiature Rectangular Inductive Prox E2S World’s Smallest Square Sensor with Built-in Amplifier H 5.5 x 5.5 mm type allows smaller, space-saving machines and devices H High response frequency 1 kHz for fast machine processes H Long sensing distance:

HYB39S64160ET

Abstract: P-TSOPII-54
Contextual Info: HYB39S64160ET-5/-5.5/-6 64MBit Synchronous DRAM 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications Preliminary Datasheet • High Performance: • Automatic Command and Controlled Precharge • Data Mask for Read / Write control -5 -5.5 -6

Contextual Info: Super-compact Proximity Sensor E2S CSM_E2S_DS_E_8_1 Advanced Performance and Wide Range of Selections in a Supercompact Size • Only 5.5 x 5.5 mm with a built-in Amplifier. • Maximum sensing distance: 2.5 mm. Stable detection even with workpiece fluctuations.

Contextual Info: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)*1 125 µs (at 2.0 V to 5.5 V, 32 kHz)*2 *1 The lower limit for operation guarantee for flash memory built-in type is 4.5 V.

Contextual Info: TFDU6102 VISHAY Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.7 V to 5.5 V Operation Description Features • Supply voltage 2.7 V to 5.5 V, Operating idle current (receive mode) < 3 mA, Shutdown current < 5 µA over full temperature range

A13F

Contextual Info: R Subminiature Rectangular Inductive Prox E2S World’s Smallest Square Sensor with Built-in Amplifier H 5.5 x 5.5 mm type allows smaller, space-saving machines and devices H High response frequency 1 kHz for fast machine processes H Long sensing distance: (E2S-j1,