JMH65R110ACFD
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET with 98 mOhm RDS(ON) at 10V VGS, 35A continuous drain current, low gate charge, and available in TO-220-3L and TO-263-3L packages. |
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JMH65R110AEFDQ
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET in TO-263-3L package with 98 mOhm RDS(ON) at 10V VGS, 72 nC gate charge, 35A continuous drain current, and AEC-Q101 qualified for automotive applications. |
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JMH65R110ACFDQ
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET in TO-220-3L package with 99 mΩ RDS(ON) at 10V VGS, 35A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. |
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JMH65R110AEFD
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET with 98 mOhm RDS(ON) at 10V VGS, 35A continuous drain current, low gate charge, and TO-220-3L/TO-263-3L package options for high-efficiency switching applications. |
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JMH65R110APLNFD
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET in DFN8080-4 package with 110 mOhm RDS(ON) at 10V VGS, 32A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMH65R110ASFD
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET in TO-247-3L package with 95 mΩ typical RDS(ON) at 10V VGS, 32A continuous drain current, low gate charge, and fast switching capability. |
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JMH65R110ACFD
