5-PIN MARKING JM Search Results

marking JM

Abstract: M2 MARKING KRA731U
Contextual Info: SEMICONDUCTOR KRA731U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking JM 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JM KRA731U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

MARKING JM

Abstract: M2 MARKING KRA731E 5-PIN MARKING JM
Contextual Info: SEMICONDUCTOR KRA731E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking JM 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JM KRA731E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

LT 5239 H

Abstract: JHTR2445A Scans-008857 52390
Contextual Info: ZD50 INSTRUCTION MANUAL F I C A T LON S S P Z050: rtode jJo in ln ai üu>jpiji, VoiL.age . ;i2 - jMiniinum Output Gurrrent ¡1 j . Max ouim Output .Current_ !; 4' .jtfaxijiui] Output. [^WOI' ! n j ¡Efficiency Typ U ; .l$?ut Volt^s: K-HVS9 i,_ 7. L.j„I.n3_ut_ Current ( i.yp).

XO-53B

Abstract: 19.6608 MHz 100PPM XO-53
Contextual Info: 4bE J> VISHAY/ DALE ELECTRONICS •IMiaSb'i GGGS'iMfl b « D E I A COMPANY MODEL XO-53B C lock O scillators OF jM tfT Hybrid C rystal, R esistance W elded M eta l P ackage Low P ro file, 2 5 0 KHz to 6 0 M Hz FEATURES • • • • • • Able to withstand flow soldering

Contextual Info: DO NOT SCALE DIMENS IONS IN THIRD ANGLE METRIC mm PROJECTIO N NOTES: SECTION A A -A PLATING CONNECTOR: CONTACT AREA: 0 ,7 6 //m ACTION A PIN : 0 ,^ u m Au MIN. OVER SnPb 1 ,2 7 /jm MIN. OVER Ni 1 ,2 7 /jm MIN. Ni MIN. PLATING CONNECTOR: CONTACT AREA: 2,qtim Au

TR-NWT-001

Contextual Info: DO IN 25 PROJECTION NOTES: A A C T IO N — P IN AREA 4,0- THIRD ANGLE M ETR IC mm SECTION A - A •12 x 4 , 0 = 48 ,0 MAX. SCALE D IM E N S IO N S 49,9- •0,95 NOT PLATING CONNECTOR: A CONTACT AREA: 0,76/jm Au MIN. OVER ACTION O .^um PIN : S nP b ACTION

4WT49

Abstract: SR10 2mm female connector
Contextual Info: DO NOT SCALE D IM E N S IO N S SECTIO N A -A NOTES: A A A A & CO NTACT A R E S H IE L D IN THIRD ANGLE METRIC mm PROJECTION PLATING CONNECTOR: CONTACT AREA: 0 ,7 6 /jm Au MIN. OVER 1,27/^m Ni MIN. ACTION PIN : 0,^urn Sn MIN, OVER 1 ,27/jm Ni MIN. REDUCED CROSS-TALK SHIELD,O.^um Sn

FSM 28

Abstract: m83536/2-027 IDB04E120 IDP04E120 PG-TO263-3-2 smd code marking 4A
Contextual Info: IDB04E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 4 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage • Easy paralleling

550a

Abstract: smd diode marking 6a PG-TO252-3-1 D06E60
Contextual Info: IDD06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling

DIODE 1000a

Abstract: D15E60 IDP15E60 IEC61249-2-21
Contextual Info: IDP15E60 Fast EmCon Diode Product Summary Features VRRM 600 V IF 15 A • Fast recovery VF 1.5 V • Soft switching T jmax 175 °C • 600 V diode technology • Low reverse recovery charge PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

smd diode 46A

Abstract: IDB23E60 IDP23E60 DIODE 1000a TO-263-3 smd code marking 23a
Contextual Info: IDB23E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C PG -TO263-3-2 • Low forward voltage • 175°C operating temperature

diode MARKING CODE 18A

Abstract: D18E120 IDB18E120 IDP18E120 PG-TO263-3-2 smd diode 36A
Contextual Info: IDB18E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 18 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage • Easy paralleling

D06E60

Abstract: diode 400V 6A D06E6 IDD06E60 J-STD-020A P-TO252 Q67040-S4378 400v 3a low vf diode marking diode 6a
Contextual Info: IDD06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling

power Diode 800V 5A

Abstract: D09E120 d09e diode MARKING CODE 18A IDP09E120 IEC61249-2-21 Diode 800V 5A
Contextual Info: IDP09E120 Fast Switching Diode Product Summary Features VRRM • 1200 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 9 A VF 1.65 V T jmax 150 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

D15E60

Abstract: IDB15E60 IDP15E60 PG-TO263-3-2 DIODE 1000a
Contextual Info: IDB15E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C PG -TO263-3-2 • Low forward voltage • 175°C operating temperature

D12E120

Abstract: IDB12E120 power Diode 800V 12A IDP12E120 PG-TO263-3-2 SMD MARKING CODE 800a
Contextual Info: IDB12E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 12 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage • Easy paralleling

D06E60

Abstract: diode 400V 6A IDD06E60 diode 6a 400v PG-TO252-3-1 smd diode marking 6a 400v 3a low vf diode PG-TO-252-3-1
Contextual Info: IDD06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling

Diode smd code 30a

Abstract: diode 30a 400v IDP30E60 DIODE 1000a power diode 400V 10 A D30E D30E60 IEC61249-2-21 DIODE 809 marking IEC-61249-2-21
Contextual Info: IDP30E60 Fast Switching Diode Product Summary Features VRRM 600 V IF 30 A • Fast recovery VF 1.5 V • Soft switching T jmax 175 °C • 600 V diode technology • Low reverse recovery charge PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

SST5114

Abstract: SST5115 SST5116 2N5114 J174 SST4391 p-channel jfet
Contextual Info: SILICONIX INC 1SE II Ö25M73S 0013=157 4 SST5114 SERIES fn r S ilic o n ix JmiV in co rp o rate d ~r-3 7 ~ 2 . £ P-Channel JFETs The SST5114 Series is a p-channel JFET analog switch designed to complement our n-channel SST4391 Series, They feature low on-resistanoe

DT350

Abstract: IDD03E60 J-STD-020A P-TO252 400v 3a low vf diode
Contextual Info: IDD03E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 3 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling

2A109

Abstract: Q67040-S4388 IDP04E120 smd diode UM 2a
Contextual Info: IDP04E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 4 A VF 1.65 V T jmax 150 °C PG-TO220-2-2. • Low forward voltage • Easy paralleling

IDD03E60

Abstract: 400v 3a low vf diode R 4.7 k smd diode UM
Contextual Info: IDD03E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 3 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling

smd diode 46A

Abstract: IDD23E60 J-STD-020A P-TO252
Contextual Info: IDD23E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature

smd diode 46A

Abstract: IDP23E60
Contextual Info: IDP23E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C PG-TO220-2-2. • Low forward voltage C • 175°C operating temperature