5-PIN MARKING JM Search Results

Contextual Info: 3 \ PIN 1 ID BY MARKING 1.000±0.050 L TOP V IEW 0 . 5 5 0 ± 0 . 0 5 0 j_ T 7 A '0.152 R e f J 0.000-0.050—1 Rev. A SID E VIE W PIN #1 IDENTIFICATIO N CHAMFER 0.100X45* BOTTOM VIEW NOTES: 1. A LL DIMENSIONS ARE IN MILLIMETERS, ANGLES ARE IN DEGREES. N IS THE TOTAL NUMBER OF TERMINALS.

SSN SOT-23

Abstract: sot-23 ssn L6327 SN7002N PG-SOT-23
Contextual Info: SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Tape and Reel Information Marking

Contextual Info: SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Tape and Reel Information Marking

0.05mm

Contextual Info: PIN A #1 I D E N T I F I C A T I O N P I N 1 ID BY MARKING TOP VIEW BOTTOM VIEW NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETERS, ANGLES ARE IN DEGREES. N IS THE TOTAL NUMBER OF TERMINALS. 2. MAX PACKAGE WARPAGE IS 0 . 0 5 m m , IS 0 . 0 7 6 0 .5 5 0 ± 0 .0 5 0 ,

Contextual Info: BY MARKING Rev. A TOP V IE W SID E VIEW BOTTOM VIE W NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETERS, ANGLES ARE IN DEGREES. N IS THE TOTAL NUMBER OF TERMINALS. 2. MAX PACKAGE WARPAGE IS 0 .0 5 m m , MAX ALLOWABLE BURRS IS 0 .0 7 6 m m IN ALL DIRECTIONS. 3. PIN #1 ID ON TOP WILL BE LASER/INK MARKED.

marking JM

Abstract: M2 MARKING KRA731U
Contextual Info: SEMICONDUCTOR KRA731U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking JM 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JM KRA731U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

MARKING JM

Abstract: M2 MARKING KRA731E 5-PIN MARKING JM
Contextual Info: SEMICONDUCTOR KRA731E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking JM 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JM KRA731E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Contextual Info: II LL 9.52/LP 10.00/GSE 10 Series -¡BHjHBWPB | H -H H I_ _ Printed Circuit Board Terminals / 9.52/10.00/10.16 mm Pitch GSE 10/180 LP 10.00/90 Printed Circuit Board Terminals PW 1ÉÉ jMBWMBB •with . test point 4.6 c 5.25 * 9.525 m NUO O) VDE Technical data

LT 5239 H

Abstract: JHTR2445A Scans-008857 52390
Contextual Info: ZD50 INSTRUCTION MANUAL F I C A T LON S S P Z050: rtode jJo in ln ai üu>jpiji, VoiL.age . ;i2 - jMiniinum Output Gurrrent ¡1 j . Max ouim Output .Current_ !; 4' .jtfaxijiui] Output. [^WOI' ! n j ¡Efficiency Typ U ; .l$?ut Volt^s: K-HVS9 i,_ 7. L.j„I.n3_ut_ Current ( i.yp).

XO-53B

Abstract: 19.6608 MHz 100PPM XO-53
Contextual Info: 4bE J> VISHAY/ DALE ELECTRONICS •IMiaSb'i GGGS'iMfl b « D E I A COMPANY MODEL XO-53B C lock O scillators OF jM tfT Hybrid C rystal, R esistance W elded M eta l P ackage Low P ro file, 2 5 0 KHz to 6 0 M Hz FEATURES • • • • • • Able to withstand flow soldering

Contextual Info: DO NOT SCALE DIMENS IONS IN THIRD ANGLE METRIC mm PROJECTIO N NOTES: SECTION A A -A PLATING CONNECTOR: CONTACT AREA: 0 ,7 6 //m ACTION A PIN : 0 ,^ u m Au MIN. OVER SnPb 1 ,2 7 /jm MIN. OVER Ni 1 ,2 7 /jm MIN. Ni MIN. PLATING CONNECTOR: CONTACT AREA: 2,qtim Au

Contextual Info: DO NOT SCALE D IM E N S IO N S NOTES: SE C TIO N IN METRIC mm A A -A A A A Ê S A A A A A 11 T H IR D A N G LE P R O J E C T IO N PLATING CONNECTOR: CONTACT AREA: 0,76/^m Au MIN, OVER 1,27jum Ni MIN, ACTION PIN : 0,^m n SnPb MIN. OVER 1,27/jm Ni MIN. REDUCED CROSS-TALK SHIELD,O.^um Sn.Pb.

352152-1 amp

Abstract: SR10 352152-4 Ni marking AMP 352152-4 AMP 352152-4 type B
Contextual Info: DO N OT SCALE DIM ENSIONS IN SECTION A 22 AC TI O N — PI N AREA 21 PROJECTION NOTES: A -A •1 0 x 4 , 0 = 4 0 , 0 4,0- METRIC mm 43,9- THIRD ANGLE A A PLATING CONNECTOR: CONTACT AREA: 0 ,7 6 /im ACTION : O .^um MIN. OVER Sn 1 ,27fjm Ni MIN. MIN. OVER 1 ,27/jm

NMC9306

Abstract: NMC9306N COP400 M08A NMC9306M8 marking C.S nmc9306e
Contextual Info: NMC9306 m jm National Semiconductor NMC9306 256-Bit Serial Electrically Erasable Programmable Memory General Description Features The NMC9306 is a 256-bit non-volatile sequential access memory fabricated using advanced floating gate N-channel E2PROM technology. It is accessed via the simple

4WT49

Abstract: SR10 2mm female connector
Contextual Info: DO NOT SCALE D IM E N S IO N S SECTIO N A -A NOTES: A A A A & CO NTACT A R E S H IE L D IN THIRD ANGLE METRIC mm PROJECTION PLATING CONNECTOR: CONTACT AREA: 0 ,7 6 /jm Au MIN. OVER 1,27/^m Ni MIN. ACTION PIN : 0,^urn Sn MIN, OVER 1 ,27/jm Ni MIN. REDUCED CROSS-TALK SHIELD,O.^um Sn

Contextual Info: jm DC/DC Converters D4 Package ELECTRONICS, INC. GENERAL FEATURES: MOB MAX _L Ultra miniature package Input/output isolated Short circuit protection Line and load regulation Input and output filtering High efficiency and reliability Low cost Single and dual output available

FSM 28

Abstract: m83536/2-027 IDB04E120 IDP04E120 PG-TO263-3-2 smd code marking 4A
Contextual Info: IDB04E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 4 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage • Easy paralleling

550a

Abstract: smd diode marking 6a PG-TO252-3-1 D06E60
Contextual Info: IDD06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling

DIODE 1000a

Abstract: D15E60 IDP15E60 IEC61249-2-21
Contextual Info: IDP15E60 Fast EmCon Diode Product Summary Features VRRM 600 V IF 15 A • Fast recovery VF 1.5 V • Soft switching T jmax 175 °C • 600 V diode technology • Low reverse recovery charge PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

smd diode 46A

Abstract: IDP23E60 IEC61249-2-21 DIODE 1000a PG-TO220-2
Contextual Info: IDP23E60 Fast Switching Diode Product Summary Features • 600 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

power Diode 800V 12A

Abstract: D12E120 800A IDP12E120 IEC61249-2-21
Contextual Info: IDP12E120 Fast Switching Diode Product Summary Features VRRM • 1200 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 12 A VF 1.65 V T jmax 150 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

D06E60

Abstract: 400v 3a low vf diode diode 400V 6A diode 6a 400v IDB06E60 IDP06E60 PG-TO263-3-2 .6A marking code
Contextual Info: IDB06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C PG-TO263-3-2 • Low forward voltage • 175°C operating temperature

smd diode 46A

Abstract: IDB23E60 IDP23E60 DIODE 1000a TO-263-3 smd code marking 23a
Contextual Info: IDB23E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C PG -TO263-3-2 • Low forward voltage • 175°C operating temperature

diode MARKING CODE 18A

Abstract: D18E120 IDB18E120 IDP18E120 PG-TO263-3-2 smd diode 36A
Contextual Info: IDB18E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 18 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage • Easy paralleling