5 PIN IC 7Z Search Results

555 timer ic

Abstract: voltage doubler using 555 timer 555-timer 250khz Voltage Doubler with 555 circuit MKS2 cmos 555 timer pulse transformer driver ic 555 DC motor speed control using 555 TC4420 ic 555 timer gate drive scr
Contextual Info: AN28 TC4420/4429 Universal Power MOSFET Interface IC Author: Ron Vinsant, Microchip Technology, Inc. INTRODUCTION The TC4420/4429 are 6A high-speed MOSFET drivers available in an 8-pin SOIC package, 8-pin CerDIP and PDIP packages, and a 5-pin TO-220 package. These parts have additional improvements

4t01

Abstract: 4T016
Contextual Info: 74HC/HCT4515 MSI 4-T0-16 LINE DECODER/DEMULTIPLEXER WITH INPUT LATCHES; INVERTING FEATURES • • • T Y P IC A L SYM BO L Inverting outputs Output capability: standard Ic e category: MSI GENERAL DESCRIPTION The 7 4 H C /H C T 4 5 1 5 are high-speed Si-gate CMOS devices and are pin

D1-D16

Contextual Info: PRELIMINARY M T56C 16K 16B 2 16K X 16 L A T C H E D S R A M |U |IC = R O N LATCHED SRAM 16K X 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES, BYTE ENABLES FEATURES • • • • • • • OPTIONS 52-Pin PLCC SC-2 52-Pin PQFP (SC-5) S e m iti 8 < <!olcûlcü > >15 < IO < < o

4000B

Abstract: 74HC 74HCT
Contextual Info: 74HC/HCT4520 MSf DUAL 4-BIT SYNCHRONOUS BINA RY COUNTER FEATURES T Y P IC A L • • Output capability: standard Iq q category: MSI GENERAL DESCRIPTION T he 7 4 H C /H C T 4 5 2 0 are high-speed Si-gate CMOS devices and are pin co m patible w ith the " 4 5 2 0 " o f the

Contextual Info: 74HC/HCT4516 MSI BINA RY UP/DOWN COUNTER FEATURES • • T Y P IC A L Output capability: standard I q c category: MSI SYMBOL GENERAL DESCRIPTION The 74 H C /H C T 4 5 1 6 are high-speed Si-gate CMOS devices and are pin com p a tib le w ith th e " 4 5 1 6 " o f the

a 4514 v

Abstract: 4514 4514 PIN DIAGRAM 4000B 74HC 74HCT 4514 decoder C23CE 74HC-HCT4514
Contextual Info: 74HC/HCT4514 MSI 4-TO-16 LINE DEC O D ER/DEM ULTIPLEXER W ITH INPUT LATCHES FEATURES T Y P IC A L Non-inverting outputs Output capability: standard I q c category: MSI GENERAL DESCRIPTION The 74 H C /H C T 4 5 T 4 are high-speed Si-gate CMOS devices and are pin

74HC series family

Abstract: SOT-108A 74HC/HCT4075 T03A 4000B 74HC 74HCT HC CMOS family characteristics 74HC SERIES DATA
Contextual Info: 74HC/HCT4075 T R IP L E 3-INPUT OR G A TE FEATURES T Y P IC A L • Output capability: standard • I q q category: SSI G E N E R A L DESCRIPTION Th e 7 4 H C / H C T 4 0 7 5 are high-speed Si-gate C M O S devices and are pin com patible w ith the " 4 0 7 5 " o f the

Contextual Info: 7 4 H C /H C T4 5 1 8 MSI D UAL SYNCHRONOUS BCD COUNTER FEATU RES T Y P IC A L • O utput capability: standard • lc c category: MSI G E N E R A L D E S C R IP T IO N Th e 7 4 H C / H C T 4 5 1 8 are high-speed Si-gate C M O S devices and are pin co m p a tib le w ith the " 4 5 1 8 " o f the

414256

Abstract: D414256 NEC 20PIN DIP
Contextual Info: NEC /¿P D 414256 2 6 2 ,1 4 4 X 4 -B IT D YN A M IC NMOS RAM NEC Electronics Inc. P R E L IM IN A R Y INFORMATION Description Pin Configurations The //PD414256 is a 262,144-word by 4-bit dynamic N-channel MOS random access memory RAM de­ signed to operate from a single +5 V power supply. The

Contextual Info: 74HC4050 SSI y v HEX HIGH TO-LOW LEVEL SHIFTER FEATURES • PARAM ETER SYM BOL C O N D IT IO N S HC • Ic e category: SSI GENERAL DESCRIPTION The 7 4H C 40 50 is a high-speed Si-gate CMOS device and is pin co m p a tib le w ith th e " 4 0 5 0 " o f the "4 0 0 0 B " series. It is specified in

4510 bcd counter

Contextual Info: 74HC/HCT4510 MSI BCD UP/DOW N COUNTER FEATURES TY P IC A L • O u tp u t c a p a b ility : standard • I q c c a te g o ry : M SI G E N E R A L D E S C R IP T IO N The 74H C /H C T 4510 are high-speed Si-gate CMOS devices and are pin com patible w ith the ” 4 5 1 0 " o f the

Contextual Info: Preliminary XRT7250 7Z T E X A R DS3/E3 Framer IC r October 1998-1 FEATURES • Supports the following data rates/framing formats DS3, C-Bit Parity DS3.M 13 E3, ITU-T G.751 E3, ITU-T G.832 • Includes Transm it and Receive HDLC Controllers • Includes 88 Bytes of On-chip RAM for Transmit

Contextual Info: AN6344 AN6344 VTR v V m m C ylinder S e r v o C ontrol C ircu it — m Unit • mm AN6344 l±, V T R f l y ' > m m « H S S T 'to wl • AN6344 l ± , > X c o m & £ 1 i i r ^ 6 0 3 > h a - / u ^ ‘ j u x CTL) le i i S ± l « i |i i a K *A-7z?>PG •

Contextual Info: fdt Integrated Device Technology, Inc. BiCMOS STATIC RAM X 9 - B I1) CACHE-TAG RAM ADVANCE INFORMATION |DT71 B?9 7 ^ 1 / Q is v q d i t \ 7ZK FEATURES: DESCRIPTION: • High-speed address to M A TC H comparison time — Military: 12/15/20ns (max.) — Commercial: 10/12/I5rts (max.)

4512B

Abstract: bd 426 4512 HCF4512 phl 7 s 715 HCC4512BK 4512BD
Contextual Info: S cos/mos S S-T H O NSON 37C D | INTEGRATED CIRCUIT 7929225 S rifinii i? O O m ia i 7 | K' iS hcc/hcf « i2B i G S SEMICONDUCTOR CORP '7zàr?~/hS"f * 8 -C H A N N E L D A TA SELECTOR • 3 -STA T E O U T P U T • S T A N D A R D IZ E D S Y M M E T R IC A L O U T P U T C H A R A C T E R IS T IC S

BA302

Abstract: 2575t ba-302
Contextual Info: ¿eaMjftiüïJtlglïS BA302W . s w î p M r m & t z ' i ' W n - i y y - s l- ip T M B ^ -j v j .1 y \ v ) r & w y - i z t m - ' m m c T ; -$ o ' G i « . ' ± 6 V . f [,; l . 8 W £ - ç o > / ’i 9 - t (P h y s ic a l D im en sio n s) 7*-7Z* •>?■*-)I'H

marking 23ab

Abstract: eftec 6300H marking Z1 sot mlx 220 eme sot23
Contextual Info: 0/;<3556# 7ZR#:LUH#6ZLWFK# HDWXUHV#DQG#%HQHILWV# • ■ ■ ■ # \ U D LQ LO P H U 3 Two Wire operation CMOS for Optimum Stability, Quality and Cost New Miniature Package/Thin, High Reliability Package# Operation Down to 3.5V # $SSOLFDWLRQV# ■ ■ ■

Scans-0016244

Abstract: J400 .27 J400 zl24
Contextual Info: CA TA LO G L IS T IN O M I C R O SWITCH tm r n a o r « n w w u w r e m w u k m u t o i cw a u n r . . . 1SE3-T SW ITCH-BASIC *^r rN ramo» FED . M FR. CODE 91929 CORROSION R E SIST A N T METAL ENCLOSURE. TREATEO I ro LU </ 2 u* Z II -.0 7 8 DIA. * 7Z q .0 7 0 SPHERICAL RADIUS

MLT 22 740

Abstract: A7W 42 gw 340 diode a7w 16 A7W 13 a7w 60 MLT 22 723 A7W 43 b2w3 A7w 50
Contextual Info: tVs T M b< W TW n ünM O nÌM l - -M C oto f -w vw on _ m. * 59C 0 2 6 6R5 7 w mO .Ti 9- -/ ^/ R -Ä J B Z W 3 0 *1 2 - » B 7Z vu W 3 0 -4 8 8 « M ic o N C w c m m s .ü . te k « . . i M k V u / - a U M D IR C O T I O tt A L T R A N S I E N T V O L T A G E S U P P R E S S O R S

BTS723GW INFINEON

Abstract: BTS723GW BTS723G zener diode esd marking HG PG-DSO-14-37 BTS723-GW PG-DSO-14 WZR device marking
Contextual Info: Smart High-Side Power Switch BTS723GW  7ZR &KDQQHOV  [ PΩ 6WDWXV HHGEDFN 6XLWDEOH IRU 9 Product Summary 2SHUDWLQJ 9ROWDJH 9EE RQ $FWLYH FKDQQHOV 2QVWDWH 5HVLVWDQFH 521 1RPLQDO ORDG FXUUHQW ,/ 120 &XUUHQW OLPLWDWLRQ ,/ 6&U Package   9

BTS5210L

Abstract: WZR device marking
Contextual Info: Smart High-Side Power Switch BTS5210L 6PDUW +LJK6LGH 3RZHU 6ZLWFK 7ZR &KDQQHOV  [ PΩ 6WDWXV HHGEDFN Product Summary 2SHUDWLQJ 9ROWDJH 9EE $FWLYH FKDQQHOV 2QVWDWH 5HVLVWDQFH 521 1RPLQDO ORDG FXUUHQW ,/ 120 &XUUHQW OLPLWDWLRQ ,/ 6&U Package 9

BTS5215L

Abstract: PG-DSO-12-9 PG-DSO-12
Contextual Info: Smart High-Side Power Switch BTS5215L 6PDUW +LJK6LGH 3RZHU 6ZLWFK 7ZR &KDQQHOV  [ PΩ 6WDWXV HHGEDFN Product Summary 9EE $FWLYH FKDQQHOV 2QVWDWH 5HVLVWDQFH 521 1RPLQDO ORDG FXUUHQW ,/ 120 &XUUHQW OLPLWDWLRQ ,/ 6&U Package 2SHUDWLQJ 9ROWDJH RQH PΩ

bts5210g

Abstract: PG-DSO-14-37
Contextual Info: Data Sheet, Rev. 1.3, April 2009 BTS5210G Smart High-Side Power Switch PROFET Automotive Smart High-Side Power Switch BTS5210G 6PDUW +LJK6LGH 3RZHU 6ZLWFK 7ZR &KDQQHOV  [ PΩ 6WDWXV HHGEDFN Product Summary 9EE $FWLYH FKDQQHOV 2QVWDWH 5HVLVWDQFH 521

Contextual Info: Preliminary 7ZTE X A R XR-T5897 Seven-Channel E1 Line Interface 3.3V .the analog plus com pany June 1997-3 FEATURES Compliant with ITU G.703 Pulse Mask Template for 2.048Mbps (E1) Rates Logical Inputs Accept either 3.3V or 5.0V Levels Ultra-Low Power Dissipation (80mW/Channel at