5 M 101K Search Results

12G821K

Abstract: R23G 112K 15g 561K 15G150k 15G 331K 12G681K 15G201K 12G220K 15G470K 23G181K
Contextual Info: am METAL OXIDE VARISTORS M a x im u m M ux M odel A p p lie d 4 C V rm s M ax T M ax L y6d M in W ± 1 T N R 7G 180K 5 \ T N R 7G 271K 7 ± 1 11 25 0 .5 5 T N R 7G 331K 7 \ T N R9G 150K 5 \ T N R 9G 271K 9 ± 1 13 25 0 .5 5 T N R 9G 331K 7 i T N R 9G 471K

m5m27c101k-12

Abstract: M27C101 27C101 M5M27C101K DW 01k M/m5m27c101k-12
Contextual Info: MITSUBISHI LS Is M 5 M 2 7 C 1 0 1 K - 1 2 ,-1 5 1048576-BIT 131( 72-WORD BY 8-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM D E S C R IP T IO N The M itsubishi M 5M 27C 101K is a high-speed 1 0 4 8 5 7 6 -b it jltra v io le t erasable and electrically reprogrammable read only

Contextual Info: MITSUBISHI MICROCOMPUTERS M37735EHLXXXHP s° PR O M V E R S IO N O F M 3 7 7 3 5 M H L X X X H P DESCRIPTION • S in g le power s u p p ly . 2 7 - 5 .5 V The M 37735E H LX X X H P is a s ingle -chip m icro com p uter using the

M5M27C101K

Abstract: M5M27C101 m5m27c10 27C101K 27C101
Contextual Info: M ITSU B ISH I L S Is M 5 M 2 M S M 2 7 7 C C 1 1 1 K 1 J , - 1 K 2 , - 1 - 1 2 5 , - 2 , - 1 5 / , - 2 1 0 4 8 5 7 6 -B IT 1 3 1 0 7 2 -W 0 R D BY 8 -B IT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION The Mitsubishi M5M27C101 K, JK is a high-speed 1048576b it ultraviolet erasable and electrically reprogrammable read

MCM101514

Abstract: MCM101514WJ10 MCM101514WJ12 EE-241 MCM101514-10
Contextual Info: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA MCM101514 Product Preview 1 Megabit Static Random Access Memories with ECL I/O ECL 101K Levels ECL 100K @ - 5.2 V Are Required T h e M C M 1 0 1 5 1 4 is a 1 ,0 4 8 ,5 7 6 b it s ta tic ra n d o m a c c e s s m e m o ry o rg a n iz e d as

27C101K

Abstract: M5M27C101K-15 m5m27c101k-2 m5m27c101k-12 m5m27c101jk M5M27C101K M5M27C101K15 M5M27C101JK12 M5M27C101K12
Contextual Info: MITSUBISHI LSIs M 5M 27C 101K , -1 2 , - 1 5 ,- 2 / M 5M 27C 101JK - 1 2 ,- 1 5 ,- 2 1048576-BIT 131072-W0RD BY 8-BIT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The Mitsubishi M5M 27C101K, J K is a high-speed 1048576bit ultraviolet erasable and electrically reprogrammable read

Contextual Info: SY10422-2.5/3/4/5/7 SY100422-2.5/3/4/5/7 SY101422-2.5/3/4/5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 2.5/3/4/5/7ns max. T h e S yn e rg y S Y 1 0 /1 0 0 /1 0 1 4 2 2 are 1 0 24-b it R andom A ccess M e m orie s R A M s , d e s ig n e d w ith ad va n ce d E m itter

13-2800-0400

Contextual Info: MCX Competitor Cross Reference Huber + Suhner 21 M CX 50-1-10 24M C X 50-1-10 21 M C X 50-2-10c 24M C X 5 0 -1 -10c 11 M CX 50-1-10 16 M C X 5 0 -1 -5c 11 M C X 50 -2 -1 0c 16 M C X 50-2-5C/111 16 M C X 50-2-5C/133 11 M C X 50-2-3 16M CX 50-2-3C 82 M C X 50-0-1/111

Contextual Info: MITSUBISHI MICROCOMPUTERS M 37702E6LXXXFP PROM VERSION of M 37702M 6LX X X FP DESCRIPTION • Single low supply voltage. 2 .7 ~ 5 .5 V The M37702E6LXXXFP is a single-chip microcomputer d e­ • Low power dissipation signed with high-performance C M O S silicon gate technolo­

Contextual Info: MITSUBISHI MICROCOMPUTERS M 37702E4LXXXFP PROM VERSION of M 37702M 4LX XXFP DESCRIPTION • T h e M 3 7 7 0 2 E 4 L X X X F P is a sin g le -ch ip m icrocom puter d e ­ • S in g le low supply v o lta g e . 2 .7 ~ 5 .5 V

Contextual Info: ' SS* • 'T W ' -LEA D ED MLI 5 M olded RF Unshielded Inductors PART NUM BER IN D U C T A N C E ML15-220M ML15-330M ML15-470M ML15-560K ML15-680K ML15-820K ML15-101K ML15-121K ML15-151K ML15-181K ML15-221K ML15-271K M Lt 5-331K ML15-391K ML15-471K ML15-561K

101K14D

Abstract: SR101K14DS
Contextual Info: PART NUMBER: SR101K14DS Issue date: Mar. 2 8 ,2 0 0 5 1. Electrical Rating: V a ristor Voltage M axim um Allow able Voltage Min 90 V o lt s Max 110 Volts A C rms 60 Volts DC 85 Volts 1 65 Volts M a x i m u m C l a m p i n g V o l t a g e at 5 0 A , 8/ 2Ons

s8 223j

Abstract: s6 5n 822j MS75089 MS75089-23 MS75088-13 S75087
Contextual Info: OHMITE LITTLE HENRIES" Inductive Components K Series Manufacturing Company R. F. Molded Chokes 1 4 3 8 ! 188 -3 6 525-± 4 7 7- 156 - 0 1 0 - 3 . 9 6 2 a- 25 '0 K M 150M K M 220M K M 330M K M 470M KM 5 60 K 18130-1 18130-2 18130-3 18130-4 18130-5 KM 680K KM 820K

BH P58

Abstract: BH P6d M37710E
Contextual Info: MITSUBISHI MICROCOMPUTERS M37710E4BXXXGP PROM VERSION of M 37710M4BXXXGP DESCRIPTION • Low p o w e r dissipation a t 2 5 M H z f r e q u e n c y .9 5 m W (T y p .) T h e M 3 7 7 1 0 E 4 B X X X G P is a built-in P R O M sing le-ch ip 16bit m icro com puter d e s ig n e d with h ig h -p erfo rm an ce C M O S

Contextual Info: MITSUBISHI MICROCOMPUTERS M37733EHLXXXHP PROM VERSION OF M37733MHLXXXHP DESCRIPTION • S in g le power s u p p ly . 2 7 - 5 .5 V The M 37733E H LX X X H P is a s ingle -chip m icro com p uter using the

Contextual Info: Y ’ 0 4 7 '1 - 3 ' 4 ' 5 / 7 K * 4 ECL ,v -o n 4 M _ 3 /n /5 /7 R A iu ? ¥ 1 n -1 7 /] 3 ;4 /5 /7 F EA TU R E S m Address access time, tAA: 3/4/5/7ns max. Chip select access time, tAC: 2ns max. Write pulse width, tww: 3ns min. Edge rate, tr/tf: 500ps typ.

R/F24-1

Contextual Info: * SYNERGY 1K x 4 E C L SY 10474-2.5/3/4/5/7 SY100474-2.5/3/4/5/7 SY101474-2.5/3/4/5/7 R A M S E M IC O N D U C TO R FEATURES DESCRIPTION • Address access time, tAA: 2.5/3/4/5<7ns max. ■ Chip select access time, tAc: 2ns max. ■ Write pulse width, tww: 3ns min.

Contextual Info: « S Y 1 0422-3/4/5/7 SY1 00422-3/4/5/7 S Y 101422-3/4/5/7 S Y101 M 422-5/7 256 x 4 ECL RAM SYNERGY S E M IC O N D U C T O R F E A TU R E S D E S C R IP TIO N Address access time, 3/4/5/7ns max. tAA: Block select access time, tAB: 2ns max. Write pulse width, tww: 3ns min.

M37710E4BFP

Abstract: 27C256K MITSUBISHI MICROCOMPUTERS 7710
Contextual Info: MITSUBISHI MICROCOMPUTERS M 37710E4BXXXFP M37710E4BFS PROM VERSION of M 37710M 4B XXXFP DESCRIPTION • Single power supply. 5 V ± 1 0 % The M 37710E4BXXXFP is a built-in PROM single-chip mic­ • Low power dissipation at 25M Hz frequency

100474

Abstract: SY100474 SY101474 Y1047
Contextual Info: * SYNERGY SY 10474-3/4/5/7 S Y 1 00474-3/4/5/7 S Y 101474-3/4/5/7 1K X 4 E C L R A M S E M IC O N D U C T O R FEA TU R E S D E S C R IP T IO N • Address access time, tAA: 3/4/5/7ns max. ■ Chip select access tim e, tAC: 2ns max. ■ Write pulse width, tww: 3ns min.

Contextual Info: SYNERG Y SY10422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 SY101M422-5/7 2 56 X 4 E C L R A M SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 3/4/5/7ns max. The Synergy SY10/100/101422 are 1024-bit Random Access Memories RAMs , designed with advanced Emitter

Contextual Info: SYNERG Y SY10422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 SY101M422-5/7 2 56 X 4 E C L R A M SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 3/4/5/7ns max. The Synergy SY10/100/101422 are 1024-bit Random Access Memories RAMs , designed with advanced Emitter

Contextual Info: MITSUBISHI MICROCOMPUTERS M 37710E8BXXXFP M37710E8BFS PROM VERSION of M 37710M 8BXXXFP DESCRIPTION • S ingle pow er s u p p ly . .5 V ± 1 0 % The M37710E8BXXXFP is a bu ilt-in PROM s in g le -c h ip m ic ­

Surface Mount

Abstract: 562-J
Contextual Info: API_newlayouts_single:APIcatalog_newlayouts 5/10/11 8:04 PM Page 14 F R NG TI RA A T m EN UM RR IM CE CU X MA TAN S) S SI HM RE (O M DC U ) M XI Hz (M MA M MU NI ) MI F Hz SR (M Y NC UE M EQ MU FR NI MI ST Q TE E NC RA LE TO H) (µ CE AN CT DU * IN ER MB