5 AMPS DIODE Search Results

STPS3100

Abstract: STPS130A STPS130U STPS15L25G STPS1L30A STPS1L30U STPS20L15G STPS20L25CG STPS2L25U STPS3L25S
Contextual Info: POWER RECTIFIERS POWER SCHOTTKY DIODES SMA SMB SMC 2 DPAK D PAK SURFACE MOUNT SCHOTTKY RECTIFIERS Voltage max 15 Volts 25 Volts Current Part Number VF (max) (*) @ rated current Tj (max) IFSM (Amps) Package 20 Amps 2 Amps 3 Amps 5 Amps 15 Amps 2 x 10 Amps

to-3pl

Abstract: igbt to220 1MBC15-060 1MBH50D-060 1MB30-060 1MB20-060 1MBC05-060 1MBC05D-060 1MBC10D-060 1MBG10D-060
Contextual Info: 22307^5 GGDMODO 70b • s DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 50 Amps Device Vces Type lc Pc VcE(sat V g e = 15V Cont. Per IGBT Max. lc Watts Volts Amps Volts Amps 1MBC05-060 600 5 1M B C 10-060 600 600 600 : 1M BC15-060 1M B20-060 Switching Time (Max.)

LS 2822 M

Abstract: KED24502 LS 2822 KE5 diode KE721KA1 KE7212A1 KE724502 KE524575 KED245A1 KE7245A1
Contextual Info: POlilEREX INC TL Ce J TETMbSl 0 0 D i a S 3 5 | Power Transistors & Darlington Modules Quad Darlington Transistor M odules Diode Vfm VCEO * lc Amps (Volts) 20 450 VC E X (S U S ) (S U S )* V lS O L (V rms) 2000 If Ifsm @ lF (Amps) (Amps) (Volts) ton fasec)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR10100C DIODE SCHOTTKY BARRIER RECTIFIER „ FEATURES * 10 amps total 5 amps per diode leg * Guard ring for transient protection * Low forward voltage drop * High surge capability * Low power loss/High efficiency „ SYMBOL

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR10100C DIODE SCHOTTKY BARRIER RECTIFIER „ FEATURES * 10 amps total 5 amps per diode leg * Guard ring for transient protection * Low forward voltage drop * High surge capability * Low power loss/High efficiency „ SYMBOL

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR10100C DIODE SCHOTTKY BARRIER RECTIFIER 1  FEATURES TO-263 * 10 amps total 5 amps per diode leg * Guard ring for transient protection * Low forward voltage drop * High surge capability * Low power loss/High efficiency

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR10100C DIODE SCHOTTKY BARRIER RECTIFIER 1  TO-220F TO-220 FEATURES * 10 amps total 5 amps per diode leg * Guard ring for transient protection * Low forward voltage drop * High surge capability * Low power loss/High efficiency

Contextual Info: Super fast rectifier diodes. 2.5 Amps, to 5 Amps. The plastic material carries U/L recognition 94V-0. Maximum Average Max. Recurrent Repetitive Forward Forward Rectified Peak Forward Surge Reverse TYPE Current Current Current Voltage Ifsm I f av @ Ta V rrm

ZAR710

Abstract: ZAR610 D13B BZS21 KR56 ZAR210 D11A KR50 KR51 KR52
Contextual Info: SILICON DIODES Silicon Controlled Avalanche Rectifiers Characteristics Max. Ratings at 25°C Vrw m Type No. volts Mean Rect. current Amps Reverse Power kW * Max. Vp at 5 Amps volts Max. I r 91 V RWM lnA Jedec Outline Avalanch e Voltage at 5mA min. max. Outline

1001289

Abstract: A14* marking sot23-5 DS10-012
Contextual Info: LMV821,LMV822,LMV824 LMV821 Single/ LMV822 Dual/ LMV824 Quad Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps Literature Number: SNOS032D LMV821 Single/ LMV822 Dual/ LMV824 Quad Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps General Description The LMV821/LMV822/LMV824 bring performance and

TRANSISTOR SMD MARKING CODE AOL

Abstract: 431 SMD SOT-23 CODE MARKING RAD smd sot-23 marking TRANSISTOR SMD MARKING CODE 1P transistor G1 SOT-23 smd code marking 56 sot23-6 sot23-5l marking code TS SMD MARKING CODE AAY
Contextual Info: MCP621/1S/2/3/4/5/9 20 MHz, 2.5 mA Op Amps with mCal Features Description • • • • • • • • • The Microchip Technology, Inc. MCP621/1S/2/3/4/5/9 family of operational amplifiers features low offset. At power-up, these op amps are self-calibrated using

1N3940

Abstract: IN3939 1N3938 1N3939 1N3941 1N3942
Contextual Info: EDAL INDUSTRIES INC 45E » H BDTS?lb OÜ003D7 BÜ7 • E DL 7~cf -/5 Bv - PIV See B p low @ 2.0 Amps 25 AMPS M. V 1.1 @ 5 xia max STYLE 6.0 amp @ 25 PIV @ 25 DO-13 sum p EQUIY. TO0 - EXCEPT Part # PIV 1N3938 1N3939 1N3940 1N3941 1N3942 200 400 600 800

SCR 25a

Abstract: SCR 25 amps PIV 600 1200PIV
Contextual Info: 31E CRYDOM CO » • 2542537 ODDObO? C3YDÜM T «CRY POWER MODULES C O M P A N Y H T 25A-42.5A SCR/DIODE CIRCUITS Part Number Identification 1st Digit Series Type B-Casestyle Ceramic Base 2nd Digit Current 3rd Digit Circuit Type 5-25 amps. 1-9 6-42.5 amps." (see schematic)

marking code tc sot 363

Abstract: sot363 marking 12 diode matrix TVS 200 diode CMKTVS05C NACMKTVS05C diode ry 10 A sot 363 marking tm sot marking RY
Contextual Info: Central LIM E PR RY A CMKTVS05C N I TM Semiconductor Corp. SURFACE MOUNT 5 DIODE MATRIX COMMON ANODE SILICON TVS 200 WATTS, 12 AMPS, 5 VOLTS DESCRIPTION: The Central Semiconductor CMKTVS05C is an ULTRAmini TVS matrix of 5 diodes with a common anode configuration, in an SOT-363

MAX410

Abstract: MAX414 MAX414 equivalent MAX412
Contextual Info: 19-4194; Rev 5; 10/08 Single/Dual/Quad, 28MHz, Low-Noise, Low-Voltage, Precision Op Amps The MAX410/MAX412/MAX414 single/dual/quad op amps set a new standard for noise performance in high-speed, low-voltage systems. Input voltage-noise density is guaranteed to be less than 2.4nV/√Hz at

MUR1XX

Abstract: MUR160 MUR190
Contextual Info: E MUR160 - MUR190 TAIWAN SEMICONDUCTOR 1.0 AMPS. Glass Passivated High Efficient Rectifiers RoHS COMPLIANCE D O -1 5 /D O -204AC 40 'i •>> IMIf Or. Features ❖ <5*<5•a■> <5*- H r- I Desig ned fo r use i n sw itch ¡ng powe r supplies. inverters and a s fre e w heeling diodes

Contextual Info: SOLI» STATE DEVICES INC 1EE D IflBhbDll □□□2013 5 I SDA 267 — ? 10 amp rectifier assembly * AVERAGE OUTPUT CURRENT IO AMPS * PIV 50 TO 1000 VOLTS * 150 NSEC. MAXIMUM RECOVERY * MAXIMUM THERMAL RESISTANCE 5°C/WATT JUNCTION TO CASE * HERMETICALLY SEALED DIODE CELLS

SXG300G

Abstract: 40101B
Contextual Info: SXG80G BRIDGE RECTIFIER DATA b Three-Phase Diode Bridges UNIT TYPE Ipc amp» A .N T. T. w 1DC amps A .F Sm/s • FS M T. amps I* t A 2s 25 C 4 5°C T. 25°C 80 68 16 3 85 190 170 SXG120G 100 120 105 205 S X G 1 80G 180 160 205 205 205 SXG21OG 210 1 85 370

NTP5N60

Contextual Info: NTP5N60 Preferred Devices Product Preview Power MOSFET 5 Amps, 600 Volts N–Channel TO–220 http://onsemi.com Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. 5 AMPERES

IN1183A

Abstract: IN1183 1N1183A Series peak inverse voltage in3766 BYS50 1N2130A in3768 1N1187 byss0 BY550-1000
Contextual Info: I C SEMICONDUCTOR T 0 0 2 M 7 T O O O O O l l 013 • INC kflE D EICS Silicon rectifier diodes. 5 Amps, to 60 Amps. V A V 3 t T C ^RRM V rm (V) (A) VsM (A) M ax. F orw ard V oltage D rop at T a = 25 °C V F at 1F(AV) (V) (A) 60 60 60 60 60 60 60 300 300

LF155A

Contextual Info: r z 7 L P ! 5 5 /2 5 5 /3 5 5 SG S TU O M SO N Ä 7# SERIES J -F E T INPUT SINGLE OPERATIONAL AMPLIFIERS • REPLACE HYBRID AND MODULE FET OP AMPs. RUGGED J-FETs ALLOW BLOW-OUT FREE HANDLING COMPARED WITH M OSFET INPUT DEVICES ■ EXCELLENT FOR LOW NOISE APPLICATIONS

jd22

Contextual Info: 7 2 94 62 1 POWEREX 91D 0 1 8 5 4 INC D TI P0ÜJEREX INC ~ T ~ 3 3 -Q ! Q0DiaS4 4 I Single FETMOD Power Modules Id Id m V g s t h (Amps) Voss (Volts) RDS(on) (Amps) (Ohms) (Volts) 100 100 300 300 450 500 0.6 0.6 — — — — gfs (mhos) Pd (Watts)

26MB100B

Abstract: 26MB60B
Contextual Info: EbE D INTERNATIONAL RECTIFIER 4Ô55452 001D731 5 • International IxorI Rectifier Power Modules Single phase diode bridges, 10 to 35 AMPS Part Number U. S. S eries 100JBÖ5L 100JB1L 100JB2L 100JB4L 100JB6L 100JB8L: 100JB10L 100JB12U 26MB05B 26MB10B 26MB20B

diode IN5552

Abstract: IN5552 lN555 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556 1N5557
Contextual Info: PIV lo 25°C Volts Amps VF IR Volts /iA 1.0 1.0 1.0 1.0 1.0 1.0 Type No. 1N 5550 1N 5551 1N 5552 1N 5553 1N 5554 Zener Type Ho. IN 5 5 5 5 1N 5556 1N 5557 1N 5558 1N 5559 IN 5 5 6 0 1N 5561 1N 5562 1N 5563 1N 5564 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0