5 A W Search Results

AWG22

Abstract: CWT-6-W122-5 RT-1404 J-STD-004 D030070 D-0300
Contextual Info: SPECIFICATION CONTROL DRAWING Product Revision Product Name CWT-3-W122-5 A CWT-5-W122-5 A CWT-6-W122-5 A CWT-7-W122-5 A CWT-9-W122-5 A CWT-11-W122-5 A CWT-13-W122-5 A Product Dimensions øA øB L min min max 2.50 3.00 24.50 0.098 (0.118) (0.965) 4.30 4.80

CWT-6-W122-5

Abstract: w122 AWG22 RT-1404 CWT-XX-W122-5 raychem solder sleeve cwt W12-2 D030070
Contextual Info: SPECIFICATION CONTROL DRAWING Product Revision Product Name CWT-3-W122-5 A CWT-5-W122-5 A CWT-6-W122-5 A CWT-7-W122-5 A CWT-9-W122-5 A CWT-11-W122-5 A CWT-13-W122-5 A Product Dimensions øA øB L min min max 2.50 3.00 24.50 0.098 (0.118) (0.965) 4.30 4.80

exar 5191

Abstract: 3525a XR-3525 XR-3527 XR3525 transistor A 1568 3525A application note
Contextual Info: EXAR X R - 1 5 2 5 A /2 5 2 5 A /3 5 2 5 A X R - 1 5 2 7 A /2 5 2 7 A /3 5 2 7 A Pulse-Width Modulating Regulators FU N C T IO N A L BLOCK DIAG RAM G E N E R A L DESCRIPTION The X R -1 5 2 5 A /1 5 2 7 A is a series o f m o n o lith ic intergrated c irc u its th a t co n ta in all o f the c o n tro l c irc u itr y necessary

Contextual Info: ANALOG DEVICES □ FEATURES Single Chip Construction V ery High-Speed Settling to 1/2LSB A D 5 6 5 A : 250ns max A D 5 6 6 A : 350ns max Full-Scale Switching Time: 30ns Guaranteed for Operation with ± 1 2 V Supplies: A D 5 6 5 A with - 1 2 V Supply: A D 5 6 6 A

0C75N

Contextual Info: MIS DRAUIHO IS UNPUBLISHED. J AJ 16 >p T u SE E A [.4 3 0 ] A A 3 5 Z 3 A M AX VI E W « X VIEW 1 .5 . C R IM P USE IT E M C R IM P A S P E C IA L A A SUPERSED ED BY 1 - 2 2 5 3 9 5 - 0 SUPERSEDED BY 4 -2 2 5 3 9 5 - 4 A SUPERSEDED BY 4 -2 2 5 3 9 5 -1 A A

7530 8pin

Abstract: MAX6154 MAX5158
Contextual Info: D/A Converters Parallel Input Serial Input 10 Bit 8 Bit VOUT V o irr M A X 5 0 0 quad M A X 5 0 9 (quad) M A X 5 1 0 (quad) M A X 5 1 3 (triple, 3V) M A X 5 1 7 (single, 2-wire) M A X 5 1 8 (dual, 2-wire) M A X 5 1 9 (dual, 2-wire) MAX520A/B (quad, 2-wire)

2SC509

Abstract: 2SA509 2sa509 transistor 2sC509 transistor 2SA509 A 2SC509 Y RH16 lma 404 RH-16 Produced by Perfect Crystal Device Technology
Contextual Info: 5 /U D > N P N ie 5 > * 5 /? J U fê h 5 > 5 > * 5 > P C T 7 5 Â 2 5 c 509 ^ 1SILICON 1 NPN EPITAXIAL TRANSISTOR (PCT U n it o A u d io PROCESS) in Pow er A m p lif ie r A p p lic a tio n s : VcE(sat) = Q . 5 V ( M a x . ) : hF E = 7 0 ~ 2 ^ 0 -f'y- y a ^ - c i w VJm Jl & i t 6 n t ~t=

LM7522

Abstract: lm7523 ua 471 5v input 4v output
Contextual Info: L M 5 5 20 / L M7 52 0 L M 5 5 2 2 / L M 7 5 2 2 and L M 5 5 2 3 / L M 7 5 2 3 e lectrical characteristics LM 5 5 2 2 /LM 5 5 2 3 : The fo llo w in g a p p ly for - 5 5 °C < T A < 1 2 5 °C N o te 1 T E S T C O N D IT IO N S (EA C H A M P L IF IE R } PA R A M ET ER

D454A

Abstract: D7039 d038 dj bk CD03 V53A A14J V435 DB538
Contextual Info: ;8 4/:/978& <707)=>(0?)@(A+)B CD03.(8)*EEF !"#$%&'()*+,)-./0121)!334(5)671(8)%8791:/00(81 • N.A&$(;&%"#.5<$3"'&$#&D;&%"#W%&$%"5<&J Z7+$[E$#($\R8$[E ■ X"'&%$-."'$D(5.#(%$"6"%D/6"'&%$A&<%"A&$"6"%D ■ X"'&%$-"3U2V"3&#$D(5.#(%$(W#;W# ■ 0%"5'D.##&%2&5"-6&$.5;W#

Contextual Info: 10 A P P L IC A B L E PCB LAYOUT wT A: l.5 0 ± 0 „ 0 5 CENTRE LINE OF DIM D /// f 2 .7 5 /// A: /// 4 ^ - 3 . 5 5 t-0.05 U.u j AU.U j I.65 -7 .0 0 - 5.75 ( -(2.73) 6.10) SECTION A - A (0 .5 7) (WITH CAP ) NOTES: S E C T IO N A - A 1. M A T E R I A L :

Contextual Info: 23 1 0 5 K a sh iw a C o u rt T orrance. C A 9 0 5 0 5 Phone: 800 5 7 9 -4 8 7 5 / (310) 5 3 4 .1 5 0 5 F a x (3 1 0 )5 3 4 1424 E -m ail: w e b m a ste r@ le d tro m cs com W ebsite: w vvw le dtronics.com LJjÿ ITYLEDTRONICS, INC: THE FUTURE OF LIGHT

Contextual Info: RRR5E : 5 0 0 0 □ HM3 +/ - 5 X P T C : . 7 '/. / C O P E R A T I N G R A N G E : - 5 5 TG I RS C STORAGE R A N G E : - 5 5 TO 150 0: T HE RMA L T I M E CON5:TANT: 10 3 E C. MAX D I 5 5 1 P A T I □ N C D N 5 T A N T : R , 5 n W/ C MI N POWER R A T I N G : , UbRWPRS C , DER AT E TO 1R5

2w105

Contextual Info: T H I R D ANGLE PR O J E C T I O N A L T E R A T I ON ISSU E D I M E N S I O N S C A P A C I T A N C E I TEM CODE U F E C W F E 2W1 0 5 0 // 2W2 2 5 0 * L T A 1. ( 10 5) 1 7 . 5 A 2. 2 ( 2 2 5) " H F 7. 1 2. 5 1 5. 1 0. 1 5. 5 II VOLUME d 0. P 8 0±0.

Contextual Info: ER25C 5 0 0 OHM: + / - 5 X NTC -3 5 '/. / C M 2 5 C □ F'ERATING R A N G E :- 5 5 TG 150 C G T G R A G E R A N G E :-85 TG 150 C TH ERMAL TIME E E N E T A N T :5 E E E , N □M D IE EI P A T I □ N C G N E T A N T : G n W / C FEWER R A T I N G 1 E 5 W P E 5 E,DERATE

MAX755

Abstract: 251C MAX735
Contextual Info: — 354 — MAX735/MAX755 M A X IM a a t i — KO'^uxW ISiJiHW ïe; P W M co -i v ' S — ^ y 7 i • x -f ■W j I / - « , + 4 .5 V iU _ h f f ;> A * O ii ÿ , M A X 7 3 5 ( ± - 5 V / '2 0 0 m A , M A X 7 5 5 H 1 W c o m * Î f f f t * è T - ÿ ï > . M A X 7 5 5 tt œ * '» Œ " T 5 E 'S T * , i f - H l t

MCT3231

Abstract: MRTU LC coupling transformer transformer 3232 x1264 A3818 A5232 A5690 BS9450 MCT3232
Contextual Info: M arconi M C T 3232/MCT 3232 FP Low Pow er Driver/Receiver Microsystems for M IL -S T D -1 5 5 3 & M A C A I R FEATURES • 1.5 W att Total Hybrid Dissipation at 2 5 % Transmitting Duty Cycle ■ In general accordance with MIL-STD-1 5 5 3 A /B and MACAIR A 3 8 1 8 , A 5 2 3 2 , A 5 6 9 0 and

Contextual Info: R R 2 5 E :5 b 0 □ H M 2: + / - 5 X P T C : .7 / . / C □ F ' E R A T I N G R A N G E :- 5 5 T G 1 R 5 C G T G R A G E R A N G E :- S 5 T G 1 5 0 C T H E R M A L T I M E E E N E T A N T :t, 0 E EE, D I G GI P A T I □ N C G N E T A N T :R ,5 n W / C FEWER RATING:

Contextual Info: M H 5 1 2 8 A A N A - 8 5 L , - 1 L M H 5 1 2 8 A A N A - 8 5 H , - 1 H , - 1 2 , - 1 2 L , - 1 H , - 1 5 L 5 / H 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION fh e M H 51 28A A N A is a 41 94 3 0 4 -b its CMOS static RAM PIN CONFIGURATION (TOP VIEW) [Both side]

Contextual Info: 2 3 1 0 5 K a s h iw a C o u r t T o rra n ce . C A 9 0 5 0 5 P h o n e : 8 0 0 5 7 9 - 4 8 7 5 / ( 3 1 0 ) 5 3 4 .1 5 0 5 F a x (3 1 0 ) 5 3 4 1424 E -m a il w e b m a s te r@ le d tro n ic s .c o m W e b site : w w w le d tro n ic s .c o m LEDTRONICS5 INC.

Contextual Info: 1 . 0 1 5 M A X . R E F .' . 3 0 5 MAX(R E F .) . 3 5 5 MAX. .1 0 9 ±.01 5 la a iY P . 0 5 0 TYP. 1 0 0 TYP. NOTES A A A 4. A : U N LESS OTHERWISE S P E C IF IE D . M A R K 'M A LC O " OR MALCO LOGO, M IL IT A R Y PART N O -, CODE /DENT N O ., AND DATE CODE WITH

AT24C

Abstract: AT24C164
Contextual Info: AT24C164 Features • L o w V o lta g e a n d S ta n d a r d V o lta g e O p e ra tio n 5 .0 V c c = 4 .5 V to 5 .5 V 2 .7 (V c c = 2 .7 V to 5 .5 V ) 2 .5 (V c c = 2 .5 V to 5 .5 V ) 1.8 (V c c = 1 .8 V to 5 .5 V ) • In te rn a lly O rg a n iz e d 2 0 4 8 x 8 (1 6 K )

TC514256

Abstract: tc514256ap tc514256a 4256AP
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS T C 5 1 4 2 5 6 A P /A J /A Z -7 0 , T C 5 1 4 2 5 6 A P /A J /A Z -8 0 T C 5 1 4 2 5 6 A P /A J /A Z -1 0 DESCRIPTION The TC514256AP/AJ/AZ i s Che new g e n e r a t i o n dynam ic RAM o r g a n iz e d 2 6 2 ,1 4 4 w ord s by 4

Contextual Info: ER25C 5 0 0 OHM: +/-17. NTC -3 5 '/. / C M 2 5 C □ F'ERATING R A N G E :- 5 5 TG 150 C G T G R A G E R A N G E :-85 TG 150 C TH ERMAL TIME E E N E T A N T :5 E E E , N □M D IE EI P A T I □ N C G N E T A N T : G n W / C FEWER R A T I N G 1 E 5 W P E 5 E,DERATE

Contextual Info: 8 7 6 2 O O m A o NOTFS m ?, A n 5 '- 5 7 l - J U 5 0 3 5 1 -8 *0 0 A P P LIC A B LE TERMINAL : 5 0 3 5 1 -8 *0 0 2. : 53375,53376,53388,53389 v ' J - X MATE WITH : 53375,53376,53388,53389 SERIES APPLY EVEN CIRCU IT PRODUCTS. E 5 '- = tl /l s * k i h TERMINAL ASSEMBLY DRAWING