4Z PNP Search Results

transistor a4z

Abstract: nec 2175 marking m67 M68 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE G N 1A 4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in TYPE Ri = 10 kH O -A A V Ri • Complementary to G A1A4Z ABSOLUTE M A X IM U M RATINGS

Contextual Info: DATA SHEET SEC SILICON TRANSISTOR ELECTRON DEVICE FN 1A 4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E 2.8 + 0.2 R t = 1 0 kn o— A /V V Ri 0.65 I g ls 1.5

AD667

Abstract: LTX test AD75003 gan3 AD521 AD524 AD544 AD741 AD75004 AD7572
Contextual Info: ILE D ANALOG DEV ICES INC oaibaoo 0 0 1 1 3 m a T-4Z-3,} Application Specific Integrated Circuits Analog Devices offers a full spectrum of capabilities in application specific integrated circuits ASICs . These chip-level systems can implement designs with 12-bit accuracy and 16-bit resolution

574 nec

Abstract: transistor a4z
Contextual Info: DATA SHEET NEC / ELECTRONDEVICE / SILICON TRANSISTOR / ^ ^ — G N 1A 4Z M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES • Resistor Built-in TYPE o—A /V V ~ Rl Ò E Complementary to G A 1 A4Z ABSOLUTE M A XIM U M RATINGS Maximum Voltages and Currents Ta = 25 °C

analog multiplier MC1496

Abstract: linear cmos logic Digital Logic circuit in Digital logic gates Components
Contextual Info: sie t> MICRO LINEAR m b o i a m a ooQ57flb lib • uln 'T'- 4Z-3,\ 0 ^ Micro Linear USICs FB3635 Analog and Digital Tile Array GENERAL DESCRIPTION FEATURES The FB3635 offers both analog and digital circuit design on a single tile array. The top half of the FB3635 contains

Contextual Info: SILICON TRANSISTO R F N 1A 4Z M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M IN I MOLD FEATURES P A C K A G E D IM EN SIO N S • in m illim e te r» R esistor B u ilt-in T Y P E 5 2.8 ± 0.2 O— ’W v - R i = 10 k£2 Ri ” 1 0.65‘ oils

LQFP-48P

Abstract: k4143 CPH3106 CPH3206 CPH3303 MB3883 NDS355AN VT100 IN5829
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27225-4Z 运用于电源管理的 ASSP （专用集成电路） 6- 通道 DC/DC 转换器 IC，带有用于升压和降压 的同步整流器 MB3883 • 说明 MB3883 是一个使用脉宽调制（PWM）和同步整流实现六通道升压 / 降压的 DC/DC 转换集成电路，用于低电压

pa12

Abstract: 5-Q08-AD4X-V1130
Contextual Info: Housing Style - Rectangular Part Number 8.0 mm - Embeddable, picofast Connector Bi 5-Q08-AD4X-V1130 ID Number Features Em bed dab le Sen sin Ran g ge m m Inductive Sensors • S4414551 Output 5 2-Wire DC 8.0 mm - Embeddable, picofast Connector Uprox Bi

PZTA94

Abstract: 4z pnp A94 TRANSISTOR PNP
Contextual Info: PZTA94 High-Voltage PNP Transistor Surface Mount P b Lead Pb -Free COLLECTOR 2,4 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 1 BASE 1 2 3 SOT-223 3 EMITTER Maximum Ratings Symbol Value Unit Collector-Emitter Voltage VCEO -400 Vdc Collector-Base Voltage VCBO

MMBTA94

Abstract: marking 4z sot-23
Contextual Info: MMBTA94 High-Voltage PNP Transistor Surface Mount P b Lead Pb -Free COLLECTOR 3 SOT-23 3 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC

Contextual Info: LESHAN RADIO COMPANY, LTD. LMBTA94LT1G S-LMBTA94LT1G LMBTA94LT1G PNP EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description 1 The LMBTA94LT1G is designed for application that requires high voltage.

LMBTA94

Abstract: lMBTA94LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. LMBTA94LT1G LMBTA94LT1G PNP EPITAXIAL PLANAR TRANSISTOR 3 We declare that the material of product compliance with RoHS requirements. 1 2 Description SOT– 23 The LMBTA94LT1G is designed for application that requires high voltage.

4z sot23 marking code

Abstract: marking 4z sot-23 BTA1759N3 BTC4505N3 pnp transistor 300v sot23
Contextual Info: CYStech Electronics Corp. Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759N3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.

4z sot23 marking code

Abstract: BTNA44N3 BTPA94N3
Contextual Info: CYStech Electronics Corp. Spec. No. : C309N3-H Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTPA94N3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.

SE135N

Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668

L4Z marking

Abstract: marking M61 marking M63
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN1L4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E B O—v w 2.8 ± 0.2 0.65ig;i5 1.5 • 3 R i = 4 7 k i2

HFA3134IHZ96

Abstract: HFA3135IHZ96 HFA3134IH96 HFA3135IH96 EIAJ-SC74 sot23/HFA3134IHZ96 HFA3134 HFA3135
Contextual Info: HFA3134, HFA3135 Data Sheet August 12, 2005 Ultra High Frequency Matched Pair Transistors Features The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s complementary bipolar UHF-1X process. The NPN

Contextual Info: HFA3134, HFA3135 Data Sheet July 21, 2005 Ultra High Frequency Matched Pair Transistors Features The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s complementary bipolar UHF-1X process. The NPN

HFA3135IHZ96

Contextual Info: HFA3134, HFA3135 Data Sheet August 12, 2005 Ultra High Frequency Matched Pair Transistors FN4445.2 Features • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s

Schottky transistor

Abstract: 4z sot23 marking code
Contextual Info: WILLAS FM120-M+ THRU MMBTA94LT1 PNPSURFACE EPITAXIAL FM1200-M+ 1.0A MOUNTPLANAR SCHOTTKYTRANSISTOR BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features excellent power dissipation offers • Batch process We declare that thedesign,

SE110N

Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Contextual Info: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)

NEC 743 lf

Abstract: 2SA1743 transistor 2sa1
Contextual Info: ~t — S 7 • 5/ — h NEC ,< * 7 — Silicon P o w e r T ran sis to r 2SA1 7 4 3 ' □ PNP X i i f f l L T WA £ 2SA1743 ii, ÜÏ&X>f - v f X y i 7 "C” L o w V c E s a t) T ” h F E W t - |-7 > D C / D C => > ' < - 9 ^ T ( ^ - f i : mm) 9 F 7 ^ '* t L t t l f ' t o

TMP47C443DM

Abstract: tmp*47c443n TMP47P443VM TMP47C243DM TMP47C243M TMP47C243N TMP47P443VN 210B-6F P47C443 GFIJ
Contextual Info: TO SH IB A TMP47C243/443 CMOS 4 t f ' 7 h h P -7 TM P47C243 Nf TM P47C443 N TM P47C243 M, TM P47C443 M TMP47C243DM, TMP47C443DM V— X £ T M P47C 243/443ti^ TLCS-470 n ? n Xit 8H y l - y ' J 7 K ^ 7 i - X , 8 H' y [HBg- & t ' O H M L fzMiÊL> tb4fcf y b 's >

2am smd transistor

Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
Contextual Info: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels