4X2MX32 Search Results

EDI7F4342MC

Abstract: LH28F016SU a1458
Contextual Info: White Electronic Designs EDI7F4342MC 4x2Mx32 FLASH MODULE DESCRIPTION FEATURES n 4x2Mx32 n Based on Sharp's LH28F016SU Flash Device n Fast Read Access Time - 80ns n 5V Only Reprogramming n Low Power Dissipation n 60mA per Device Active Current n 10µA per Device CMOS Standby Current

Contextual Info: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES DESCRIPTION n n n n n n n The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119

100MHZ

Abstract: 133MHZ 8MX32 WED3DL328V
Contextual Info: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES             DESCRIPTION The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer

EDI7F4342MC

Abstract: LH28F016SU
Contextual Info: White Electronic Designs EDI7F4342MC 4x2Mx32 FLASH MODULE DESCRIPTION FEATURES „ 4x2Mx32 „ Based on Sharp's LH28F016SU Flash Device „ Fast Read Access Time - 80ns „ 5V Only Reprogramming „ The EDI7F4342MC is organized as four banks of 2Mx32. The module is based on Sharp's LH28F016SU - 2Mx8

Contextual Info: c a WPF8M32XA-90PSC5 I/I/HITE /M ICRO ELECTRONICS 4x2Mx32 5V FLASH S IM M p relim in a ry * FEATURES • A c c e s s T im e of 90ns ■ 100,000 Erase/Program C ycles ■ Packaging: ■ O rganized as fo u r banks of 2 M x 3 2 • 80-pin S I M M ■ C o m m ercial T em peratu re Range

EDI7F4342MC

Abstract: LH28F016SU
Contextual Info: EDI7F4342MC 4x2Mx32 FLASH MODULE FEATURES DESCRIPTION n 4x2Mx32 The EDI7F4342MC is organized as four banks of 2Mx32. The module is based on Sharp's LH28F016SU - 2Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. n Based on Sharp's LH28F016SU Flash Device

EDI7F4342MV

Contextual Info: White Electronic Designs EDI7F4342MV 4x2Mx32 FLASH MODULE FEATURES n 4x2Mx32 n Based on Intel's E28F016S3 Flash Device n Fast Read Access Time - 120ns n Flexible Smart Voltage n n 2.7-3.6V Program Erase n 2.7-3.6V Read Operation n 12Vpp Fast Production Programming

100MHZ

Abstract: 133MHZ 8MX32 WED3DL328V a1011
Contextual Info: White Electronic Designs WED3DL328V 8Mx32 SDRAM FEATURES DESCRIPTION The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119 lead, 14mm by

E28F016S3

Contextual Info: White Electronic Designs EDI7F4342MV 4x2Mx32 FLASH MODULE FEATURES „ 4x2Mx32 „ Based on Intel's E28F016S3 Flash Device „ Fast Read Access Time - 120ns „ Flexible Smart Voltage „ „ 2.7-3.6V Program Erase „ 2.7-3.6V Read Operation „ 12Vpp Fast Production Programming

ED16-23

Abstract: TMS320C TMS320C6000 WED3DL328V
Contextual Info: WED3DL328V 8Mx32 SDRAM PRELIMINARY FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and

Contextual Info: a WHITE /MICROELECTRONICS 4x2Mx32 5V FLASH S IM M WPF8M32XB-90PSC5 PRELIMINARY* FEATURES • ■ A cce ss T im e o f 90ns ■ 1 00 ,00 0 E ra se/P ro gra m C ycles Packaging: ■ O rganized as fo u r banks o f 2 M x3 2 • 8 0-p in S IM M ■ C o m m e rcia l T e m p e ra tu re Range

CS 1602 B

Abstract: 29f016-90
Contextual Info: WPF8M32XA-90PSC5 WHITE M IC R O ELECTRO NICS 4x2Mx32 5V FLASH S IM M PR ELIM IN A R Y ' FEATURES • A c c e ss T im e of 90ns ■ 100,000 E ra s e /P ro g ra m Cycles ■ ■ O rg an ized as fo u r banks of 2 M x 3 2 ■ C o m m e rc ia l T e m p e ra tu re Range

3402 transistor

Abstract: EDI7F4342MV
Contextual Info: EDI7F4342MV 4x2Mx32 FLASH MODULE FEATURES DESCRIPTION • 4x2Mx32 The EDI7F4342MV is organized as four banks of 2Mx32. The module is based on Intel's E28F016S3 - 2Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. • Based on Intel's E28F016S3 Flash Device

C3604BD-F

Abstract: LTN150XG-L05-G ul1571 wire LTN150PG-L03 LTN150XG LTN150XG-L05 2203-006090 bga nvidia SLB9635TT12 BA59-01751A
Contextual Info: 10. Electrical Partlist Option SEC code 0902-001916 0902-001937 0902-001938 0902-001939 0902-001943 1105-001609 1105-001609 1105-001610 1105-001610 1105-001611 1105-001611 1105-001614 1105-001614 1105-001615 1105-001615 1105-001682 1105-001682 1105-001683

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP