4N35V SERIES Search Results

4N25GV

Abstract: 4N25V 4N35V 4N35GV
Contextual Info: 4N25V G / 4N35V(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The 4N25V(G)/ 4N35V(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline

4N25GV

Abstract: 4N25V 4N25VS 4N35V
Contextual Info: TELEFUNKEN Semiconductors 4N25V G / 4N35V(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The 4N25V(G)/ 4N35V(G) Series consist of a phototransistor optically coupled to a gallium arsenide infrared

4N25GV

Abstract: 4N25V 4N25VS 4N35V 4N35V Series
Contextual Info: 4N25V G / 4N35V(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The 4N25V(G)/ 4N35V(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline

Contextual Info: T emic S e m i c o n d u c t o r s 4N25V G / 4N35V(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The 4N25V(G)/ 4N35V(G) series consists of a phototransistor optically coupled to a gallium arsenide

TI-327

Contextual Info: Temic Semiconductors 4N25V G /4N35V(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The 4N25V(G)/ 4N35V(G) series consists of a photo- The elements are mounted on one leadframe using a transistor optically coupled to a gallium arsenide coplanar technique, providing a fixed distance between

4N25GV

Abstract: 4N25 4N25V 4N35GV 4N35V
Contextual Info: 4N25V, 4N25GV, 4N35V, 4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 E 4 • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection • Low temperature coefficient of CTR

4N25GV

Abstract: 4N35V Series
Contextual Info: 4N25V/4N25GV/4N35V/4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection E 4 • Low temperature coefficient of CTR 1

Contextual Info: 4N25V/4N25GV/4N35V/4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection E 4 • Low temperature coefficient of CTR • Rated isolation voltage RMS includes DC

Contextual Info: 4N25V, 4N25GV, 4N35V, 4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 E 4 • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection • Low temperature coefficient of CTR

4N25V

Abstract: 4N25GV 4N25VS 4N35V tcl tv 21 schematic diagram MARKING 611 OPTOCOUPLER IC AL 03 tcl tv 21" schematic diagram
Contextual Info: Temic S e m i c o n d u c t o r s 4N25V G / 4N35V(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description T he 4N 25V (G )/ 4N 35V (G ) series consists o f a phototransistor optically coupled to a gallium arsenide

4N35GV

Abstract: 4N25GV 4N25V 4N35V
Contextual Info: 4N25V/4N25GV/4N35V/4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection E 4 • Low temperature coefficient of CTR 1

4N35GV

Abstract: 4N25 4N25GV 4N25V 4N35V 4N35GV Series
Contextual Info: 4N25V, 4N25GV, 4N35V, 4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 E 4 • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection • Low temperature coefficient of CTR

4N35GV

Contextual Info: VISHAY 4N25V/ 4N25GV/ 4N35V/ 4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output Features • Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection • Low temperature coefficient of CTR • Rated isolation voltage RMS includes DC

Contextual Info: 4N25V/ 4N25GV/ 4N35V/ 4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output Features • Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection • Low temperature coefficient of CTR • Rated isolation voltage RMS includes DC

bs415

Abstract: Voltage-600 4N35GV
Contextual Info: VISHAY 4N25V/ 4N25GV/ 4N35V/ 4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output Features • Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection • Low temperature coefficient of CTR • Rated isolation voltage RMS includes DC

ST2000

Abstract: MOC211 K827P K847P TCST5133 TCMT1020 CNY70 CNY18 3c91c telefunken tcst
Contextual Info: T em ic S e m i c o n d u c t o r s General Information Selector Guide - Alphanumeric Index M Numbers 3C91C/3C92C 79 MCT6/MCT62 270 4N25-28 88 M OC205-507 277 4N25V G /4N35V(G) 95 MOC211-213 284 M O C 215-217 291 4N 32/4N33 106 4N 35-37 113 c T TCDTl 100(G) Series

4N35 application note

Abstract: 4n35 IC 4N35 4N35 applications ic 4n35 data sheet 4n35 datasheet 4N35 circuits 4N35M-V of ic 4n35 4N35 application
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High crrent transfer ratio CTR : MIN. 100% at IF = 10mA, VCE = 10V * Response time ( ton : TYP. 3µs at VCC = 10V, IC = 2mA, RL = 100Ω ) * Input-output isolation voltage 4N35-V series : Viso = 3,550Vrms

4N35 application note

Abstract: LTV4N35 LTV4N35-V LTV 4N35 SMD LTV4N37 4N35 4N35 circuits LTV4N35M-V 4N35 applications LTV-4N35
Contextual Info: General Purpose Type Photocoupler LTV-4N35 Series/LTV-4N37 Series 4N35 Series/4N37 Series Package Dimensions High current transfer ratio CTR : MIN.100% at IF=10mA, VCE=10V Response time (ton : TYP, 3 s at VCE=10V, IC=2mA, RL=100 ) Input-output isolation voltage :

K1150PG

Abstract: K1150Pg Opto Coupler opto coupler 4n35 datasheet Opto Coupler 4N33 darlington opto coupler opto coupler 4n35 purpose of opto coupler 4n35 4 channel triac opto x1 transistor K1150P
Contextual Info: Vishay Semiconductors Classification Chart for Opto Couplers General purpose 4N27/28 CTR>10% Standard 4N25/26 CTR>20% Transistor output 4N35–37 CTR>100% 6 Pin-Series Base n.c. TCDT1110 Transistor output CTR>50% High CTR 4N32/33 Darlington output CTR>500%

K1150PG

Abstract: K625 KB24P TCDT1120 ET1100
Contextual Info: V I^ W Y Vishay Telefunken Safety Standard Approval List / Coupling Systems UL CSA I VDE BSI Safety standard accordine U‘. 1577stngis C-UL 1577doubf» fHgiadk» UL 1S77double Protacflo» NORDIC S M to »»page BSf VDE MB4 IEC95G/EN6095O; ÎEC65/EN60065 j

IC 4N35 circuit diagram

Abstract: 4N25GV
Contextual Info: 4N25 G V/ 4N35(G)V Series Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25(G)V/4N35(G)V series consists of a photo­ transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

IC 4N35 circuit diagram

Abstract: 4N35GV 4N35 applications 4N25 4N25V 4N35 4N35V IF88
Contextual Info: 4N25 G V/ 4N35(G)V Series Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25(G)V/ 4N35(G)V series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

IC 4N35 circuit diagram

Abstract: DVE 0884 4N35GV
Contextual Info: 4N25 G V/ 4N35(G)V Series VtSN&Y Vishay Telefunken ▼ Optocoupler with Phototransistor Output Description The 4N25(G)V/ 4N35(G)V series consists of a photo­ transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline

4N35 applications

Abstract: construction in 4n35 optocoupler 4N25 4N25V 4N35 4N35V 4N35GV IC 4N35 circuit diagram
Contextual Info: 4N25 G V/ 4N35(G)V Series Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25(G)V/ 4N35(G)V series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.