4N 7 Search Results

LTV6N139

Abstract: Imperial Star LTV4N25 LTV4N32 LTV4N35 LTV829 series 4N Photocoupler LTV4N26 LTV4N27 LTV4N28
Contextual Info: ih p e r ia l ' star 3tE corp 47152^1 D OGOaOQl 4 • IM S T -H l^ 3 Photocoupler Quick Reference Guide ■ LTV4N Series . General Purpose 4N Series Package M odel N o. LTV 4N 25 LTV 4N 26 LTV 4N 2 7 LTV 4N 28 LTV 4N 32 LTV 4N 33 LTV 4N 35 LTV 4N 37 F e a tu re s

Contextual Info: 3.50 12.00 10.60 3.50 3.00 5.00 5.00 2.50 4N 1S 2.50 5T 2.50 2.50 3N M6.00*0.50 2R 1.00-5PLS 3.50 3N 4N 1S 5.00 6.50 7.00 9.00 3- Ø1.50 POST 5.00 5T Ø3.60 2R 5- Ø1.30 PCB LAYOUT (BOTTOM VIEW) 1S 3.00 5.00 5.00 1S 2R 1S 2R 3N 3N 1S 2R 4N 1S 2R 1S 4N 1S

4N25 6 pin dip optoisolator

Abstract: 4N25 4N25A VDE0113 VDE0160 VDE0832 VDE0833 4N27 Opto-isolator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 25 4N 25A 4N 26 4N 27 4N 28 6-Pin DIP Optoisolators Transistor Output T h e se d e vices co n sist of a galliu m arse n id e infrared em itting d iod e optically co up led to a m on olith ic silic on p h o to tran sisto r detector.

GE 4N35

Abstract: 4n35 optoisolator motorola 4n35 4N36 Control 4N35 4N35 VDE0160 VDE0832 VDE0833 C4N35
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 35 4N 36 4N 37 6-Pin D IP O ptoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • • • •

MAE 411

Abstract: 4N15 B458 A109D STI3220 PQFP144 STI3220CV 322013E EC 32_2002_
Contextual Info: STi3220 MOTION ESTIMATION PROCESSOR . . . . . . . . . PIXEL RATE FROM 0 UP TO 20MHz BLOCK SIZE : 8 x 4n, 16 x 4n MAXIMUM DISPLACEMENT +7/-8 PIXELS HORIZONTAL AND VERTICAL COMPUTATION OF THE MOTION VECTOR AND MINIMUM DISTORTION RANDOM ACCESS TO THE 256 DISTORTIONS

Contextual Info: SGS-THOMSON [*^ i^©IÏÏEMD gS STI3220 MOTION ESTIMATION PROCESSOR ADVANCE DATA • PIXEL RATE FROM 0 UP TO 18MHz ■ BLOCK SIZE : 8 x 4n, 16 x 4n ■ MAXIMUM DISPLACEM ENT +7/-8 PIXELS HORIZONTAL AND VERTICAL ■ COMPUTATION OF THE MOTION VECTOR AND M INIMUM DISTORTION

4N24A

Abstract: 4N22A 4N23A JANTXV-4N22A
Contextual Info: Product Bulletin 4N22AJAN September 1996 optek Optically Coupled Isolators Types 4N22A , 4N23A , 4N24A , JANTX, JA N TX V -4N 22A , 4N23A , 4N 24A • TX and TXV versions are processed to Ml L-PRF-19500/486 • 1 kV electrical isolation • Base contact is provided for

Yamaha YDA

Abstract: YDA144 qfn20 power POWER AMPLIFIER CIRCUIT DIAGRAM 10000 PD25 QFN20 RB161VA-20 snubber circuit DDP 2000 Po-1230
Contextual Info: YDA144 D- 4N STEREO 2.1W Non-Clip DIGITAL AUDIO POWER AMPLIFIER •Overview YDA144 D-4N is a digital audio power amplifier IC with maximum output of 2.1W (RL=4Ω)x2ch. YDA144 has a “Pure Pulse Direct Speaker Drive Circuit” which directly drives speakers while reducing distortion of

Contextual Info: M w T -0618S -4N 1/0618Z -4N 1 6.0-18.0 GHz BALANCED A M PLIFIER MODULE MICROWAVE TECHNOLOGY 4268 SotarWay Fremont, CA 94538 510-651-6700 FA X510-651 -2208 TYPICAL SP EC IFIC A TIO N S @ 25°C • • • • • • 7.5 dB SMALL SIGNAL GAIN 4.5 dB NOISE FIGURE

Contextual Info: $ WDK 4N DU-PE WDK 2.5N PE WDK 2.5N DU-PE Ground Terminals WDK 4N PE O— O 0 ^ 0 Single Level & Ground Available Options Version Part No. Beige Wemid 1041650000 Branch Single Level & Ground Part No. Branch Part No. Part No. 1041950000 Green/Yellow Wemid

ST2000

Abstract: MOC211 K827P K847P TCST5133 TCMT1020 CNY70 CNY18 3c91c telefunken tcst
Contextual Info: T em ic S e m i c o n d u c t o r s General Information Selector Guide - Alphanumeric Index M Numbers 3C91C/3C92C 79 MCT6/MCT62 270 4N25-28 88 M OC205-507 277 4N25V G /4N35V(G) 95 MOC211-213 284 M O C 215-217 291 4N 32/4N33 106 4N 35-37 113 c T TCDTl 100(G) Series

YDA144B

Abstract: yamaha d85 YDA144B-QZ Yamaha YDA QFN20 RB161VA-20 RB550VA-30 YDA144B-PZ WL-CSP-16 YDA144
Contextual Info: YDA144B D- 4N STEREO 2.1W Non-Clip DIGITAL AUDIO POWER AMPLIFIER •Overview YDA144B D-4N is a digital audio power amplifier IC with maximum output of 2.1W (RL=4Ω)x2ch. YDA144B has a “Pure Pulse Direct Speaker Drive Circuit” which directly drives speakers while reducing distortion of

4N29

Abstract: 4N29A VDE0160 VDE0832 VDE0833 4N32-4N32A-4N33 7500 IC 14 PIN 4n32
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 29 4N29A 4N30 4N 31 4N32 4N32A 4N33 6 -P in D IP O p to is o la to rs Darlington Output Each device consists o f a gallium arsenide infrared em itting diode optically coupled to a m onolithic silicon photodarlington detector.

4N25V

Abstract: 4N25GV 4N25VS 4N35V tcl tv 21 schematic diagram MARKING 611 OPTOCOUPLER IC AL 03 tcl tv 21" schematic diagram
Contextual Info: Temic S e m i c o n d u c t o r s 4N25V G / 4N35V(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description T he 4N 25V (G )/ 4N 35V (G ) series consists o f a phototransistor optically coupled to a gallium arsenide

Contextual Info: STB4NB80 N - CHANNEL 800V - 3G - 4A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STB 4N B80 S TB 4N B80FP • . . . . 800 V 800 V RDS on 3.3 3.3 a a Id 4 A 4 A TYPICAL RDS(on) = 3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: SGS-THOMSON RfflD01ñ!<s [l[L[ie,ü’[KÍ@RDD S$ STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP 4N B50 S TP 4N B50FP V dss R d S( o i i ) Id 500 V 500 V < 2.8 Q. < 2.8 Q. 3.8 A 2.5 A • TYPICAL RDS(on) =2.5

Contextual Info: STRIPLINE POWER DIVIDERS, 3 WAY - 0° OCTAVE/MULTI-OCTAVE B ANDWIDTHS P/N max. 1 Input Power (watts) max. 6.0 6.0 1.35:1 1.35:1 5 5 PS3-01-451/4N PS3-01-451/4S 0.4 0.3 7.0 7.0 1.40:1 1.40:1 5 5 PS3-06-451/4N PS3-06-451/4S 16 17 0.5 0.5 8.0 6.0 1.50:1 1.50:1

Contextual Info: WDK 2.5 NV WDK 2.5 DU-PE W D K 4N V W D K 4N € > . € > Ip * * Branch • •«f it Single Level & Ground ' •Si»" Branch Dual Level H H I H H I H H H i I H H H H H IH H i H Part No. Part No. 1041610000 1036400000 Part No. Part No. 1041900000 1041910000

VHR-4N

Abstract: BVH-21T-P1 JST VHR-4N
Contextual Info: Connector Data Sheet RS Stock No. 381841 Connector Kit E1 Contains: JST Input Connector: VHR -3N x 1 JST Output Connector: VHR-4N x 1 JST Crimps: BVH-21T-P1.1 x 7

Contextual Info: S T P 4 N 100 S T P 4 N 100 FI ¿57 S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP 4N 100 S TP 4N 100FI V dss RDS on Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4 A 2.2 A TYPICAL RDS(on) = 3.1 Q. AVALANCHE RUGGED TECHNOLOGY

TBA120

Abstract: TBA120U TBA120U diagram A120
Contextual Info: 4n> TBA120 U Monolithisch Integrierte Schaltung Monolithic Integrated Circuit Anwendung: FM-ZF-Verstärker und Demodulator Application: FM IF amplifier and detector Features: Besondere Merkmale: • Keine Gruppierung der Lautstärke-Einstellcharakteristik

VCR3P

Abstract: vcr7n VCR5P-5510 VCR5P jfet transistor for VCR
Contextual Info: Voltage Controlled Resistors CORPORATION VCR2N / 3P / 4N / 5P / 7N ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified APPLICATIONS • Small Signal Attenuators • Filters Gain Control • Amplifier • Oscillator Amplitude Control Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 15V

dek 1.5

Abstract: WEW-35-2 1020200000 wdu 6 1056400000 1061200000 1020180000 0299600000 1020100000 1020300000
Contextual Info: WDU 4 WDU 4N WDU 6 WDU 10 Single Level Single Level Single Level Now accepts pluggable or screw jumpers Reference Derating Chart Part No. 1020100000 1020180000 1036760000 1020140000 1020120000 1020160000 1037820000 1037810000 1037800000 1036700000 1020110000

VCR7N

Abstract: AN105 Siliconix JFET
Contextual Info: VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number VGS off Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N –7 –25 60 VCR4N –7 –25 600 VCR7N –5 –25 8000 FEATURES BENEFITS APPLICATIONS D Continuous Voltage-Controlled