4N 4D Search Results

thyristor SCR 406

Abstract: thyristor of 12 amp SCR 406 marking 4n thyristor 406 CS202-4B CS202-4D CS202-4M CS202-4N
Contextual Info: Central CS202-4B CS202-4D CS202-4M CS202-4N TM Semiconductor Corp. 4.0 AMP SCR 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS202-4B series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems.

Contextual Info: Central' CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2 Semiconductor Corp. 4.0 AMP SCR 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS202-4B-2 series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications

CS39-4N

Abstract: CS39-4B marking 4n CS39-4D CS39-4M silicon controlled rectifier
Contextual Info: Central CS39-4B CS39-4D CS39-4M CS39-4N SILICON CONTROLLED RECTIFIER 4.0 AMP, 200 THRU 800 VOLTS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CS39-4B series type is a hermetically sealed silicon controlled rectifier designed for sensing circuit

gk1k

Abstract: GK 052 JS marking marking code JS
Contextual Info: Central' CS202-4B CS202-4D CS202-4M CS202-4N Semiconductor Corp. 4.0 AMP SCR 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS202-4B series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems.

thyristor SCR 406

Abstract: marking 4n thyristor 406 CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2 4B2 rectifier CS202-4B
Contextual Info: Central CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2 TM Semiconductor Corp. 4.0 AMP SCR 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS202-4B-2 series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications

Contextual Info: Central CS39-4B CS39-4D CS39-4M CS39-4N Semiconductor Corp. SILICON CONTROLLED RECTIFIER 4.0 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEM ICONDUCTO R CS39-4B series type is a hermetically sealed silicon con­ trolled rectifier designed for sensing circuit appli­

triac t 444

Contextual Info: Central CQ202-4B CQ202-4D CQ202-4M CQ202-4N Semiconductor Corp. 4.0 AMP TRIAC 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ202-4B series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

thyristor k 202

Abstract: thyristor 406 CQ202-4B triac 444 triac t 444 marking 4n CQ202-4D CQ202-4M CQ202-4N triac control 300 amp
Contextual Info: Central CQ202-4B CQ202-4D CQ202-4M CQ202-4N TM Semiconductor Corp. 4.0 AMP TRIAC 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ202-4B series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

CS202

Contextual Info: CS202-4B CS202-4D CS202-4M CS202-4N w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS202-4B series type is an epoxy molded silicon controlled rectifier designed for sensing circuit applications and control systems. 4.0 AMP SCR

"Silicon Controlled Rectifiers" 35 amp

Contextual Info: CS39-4B CS39-4D CS39-4M CS39-4N SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS39-4B series types are hermetically sealed silicon controlled rectifiers designed for sensing circuit applications and

Contextual Info: Central CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2 Semiconductor Corp. 4.0 AMP TRIAC 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ202-4B-2 series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

CQ202-4B-2

Abstract: marking 4B2 marking 4n thyristor 406 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2 triac 444 4b2 marking
Contextual Info: Central CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2 TM Semiconductor Corp. 4.0 AMP TRIAC 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ202-4B-2 series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

HYMD512G726CF

Contextual Info: HYMD512G726CF P 4N-D43/J SERIAL PRESENCE DETECT Rev. 0.0 -D43 Byte Function described Number of Bytes written into serial memory at module manufacturer Total Number of Bytes in SPD device 1 Fundmetal Memory Type 2 Number of Row addresses on this assembly 3

4b2 marking

Contextual Info: CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ202-4B-2 series type is an epoxy molded silicon triac designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

4B2 rectifier

Contextual Info: CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS202-4B-2 series type is an epoxy molded silicon controlled rectifier designed for sensing circuit applications and control systems. 4.0 AMP SCR

Triac Series 480 400

Abstract: c0202 CQ202-4B triac 480 400 1321 TRIAC
Contextual Info: Datasheet ^ ^ ^ • ■ CQ202-4B CQ202-4D CQ202-4M CQ202-4N tm N V IIM 1 | L b U I Sem iconductor Coro. 145 Adams Avenue, Hauppauge, NY 11788 USA W i l l ! W I R V B w W w l 4.0 AMP TRIAC 200 THRU 800 VOLTS Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

PM4351-RGI

Abstract: PM4351-RI PI3105 TVR diode 4N PM4351 T1B04 048-kbit pm4351rgi Nippon capacitors
Contextual Info: PM4351 COMET STANDARD PRODUCT DATA SHEET ISSUE 11 COMBINED E1/T1 TRANSCEIVER :0 2: 37 AM PMC-1970624 Mo nd ay ,1 4N COMET ov em be r, 20 05 04 PM4351 DATA SHEET ISSUE11: NOVEMBER 2005 Do wn l oa de d by s ar as eli m of sil ico n ex pe rt on COMBINED E1/T1

SIP14H

Abstract: SIP-14
Contextual Info: POWER AMPLIFIER 2x8W H T L4 ioao 100,0 1COO.O = £ 6 io o ,ü + IN PU T u n « O 10 [IH [12] [U 14 1D D ,O it m,Q ^ = iood,o INPUT 4d 4n ] P ü =z*aw R l = 4 Ohm TDH = - +V cc k H H D,15 VCC M A* = VCC TYP = VCC RHG = - 0.15 Icco TïP = 20m A Icca MAX = I MAX = R in

HYNIX lot date code

Abstract: HYNIX manufacturing code MANUFACTURE of code HYNIX SERIAL NUMBER
Contextual Info: HYMD512G726BF P 4N-D43/J SERIAL PRESENCE DETECT Rev. 0.0 -D43 Byte 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36-40 41 42 43 44 45 46-61 62 63 64 65~71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88

Contextual Info: DATE REV 7 - 3 0 -0 7 AO - - 2 - 2 2 -0 8 A1 8366 TRM -4.300 [109.22]- ECN APP'D. BY .350 [8.89] .050 [1.27]— TYP. .035 [0.89] ±.003 [0.08] 8 .415 [10.54] $ 0.006 [0.15] PIN #1 V 4- 1= 4 4 \ 2d 4d 6o 80 1= \ \ I 2d 4d 6o 80 1= 4 4 I 2d 4d 6o 80 U 5 , Ì

6A65

Contextual Info: 0123456789 8 6    466 4 !"6#$6%!&!%! ' *+ @;A4:()=2=B;(C;*-=B<04*=B4?-4D;4261E=54A4B4F /26<;4BA* ,-./0123454)46 7894:;<+=><?< GHIJKLMKNONPQN ^_`ab`c_ ,264n;*A=.*6<;*+ op=o7q=r=os tup=vt=w=tu7q=ros ^_`ab`c_ 2xy&6x!!&zz&

s m r708

Abstract: Kf617
Contextual Info: A?2?-BC,2D-E,FG-" HI260,;-"%%. !"#$%&!"#'% )*+,-.%-/0123&3-!45-46789,3 :6;-"-<=>'%-<=-);?@3=13316@ K+91I?216@3 • JKLMC>JHN)'//*0+'#0,". ■ F*#&'80%8)+'/'+0#O)EHI).O.#$2)'//*0+'#0," ■ N0%8G./$$()('#')+,223"0+'#0," ■ H0%0#0:$()10($, A,3I;1+216@ J,?28;,3

Contextual Info: VIM -878 CN O +1 2 . 7 0 5 + 0.2 O lO i c n cm o o o o o +1 K f +1 o eg CN PIN PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 COMO 1D 1L 2D 2L 3D 3L 4D 4L 5D 5L 6D 6L 7D 7L 8D 8L COMO C0M1 1E 1K 2E 2K 3E 3K 4E 4K 5E 5K 6E 6K 7E 7K 8E 8K - COM2 1F 1J 2F 2J

IHW40N60R

Abstract: lm 234 diode N238 F238 6284n lm6040
Contextual Info: IHW40N60R IH-series Reverse conducting IGBT C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior