4J 111 Search Results

Model 233

Abstract: kj107 Model 234J t300P AMP 140 pin socket 07J1 analog devices chopper stabilized amplifier analog devices model 233
Contextual Info: -. W LowNoise-Wideband ChopperStabilizedAmplifier MODEL234 ANALOG DEVICES PRELIMINARY TECHNICAL DATA FEATURES Low Drift: 0.1/.LVtC, 1pA/oC Offset Stability: 2JJ.Vper month Submicrovolt Noise: 0.7J.1.Vp-p 0.01 to 1Hz B.W. Fast Response: 2.5MHz B.W., 4J.1.sec

IC103

Abstract: MT38A araa FMMT38A FMMT38B FMMT38C CJKL
Contextual Info: m SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON ISSUE 2- JANUARY TRANSISTORS 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DETAILS - ABSOLUTE MAXIMUM FMMT38A - 4J FMMT38B - 5J FM MT38C - 7.J RATINGS. PARAMETER Collector-Base Voltage

C1180

Contextual Info: % % + ! , % &' !" * #$ % 2 & ! + &$## !3 4 / ! &$## !3 4 5 4 6, % 2 ! )+.7 3 4 6 ,$ #$ 8 3 4 9: ." 4 ! ; ' 6 * .< 8 . = ' > ( ! . !' - + ## 9 ' !* ?@ !A( + # $! B+ 7 + # / 7 9& + # ! $ " <. D 6, 7 7 . 6, . 4J .,L 27 %D D%27 <J)% 9K47D% 27 6, 7 D ( )*+,(C ()D)*

AZM 415 20 zpk

Abstract: PS113 415B1 p3nc A12212
Contextual Info: Solenoid interlocks EX-AZM 415-…-3D Technical data L II 3D Ex tD A22 IP67 T90°C X IEC 60947-5-1 IEC 61241-1 BG-GS-ET-19 Enclosure: light-alloy die-cast, enamel finish Max. impact energy: 4J Max. actuating speed: 1 m/s Actuator: zinc-plated brass / aluminium

Contextual Info: Series 511 Molded Unshielded RF Coils SERIES 511 PHENOLIC CORE 511-2J 511-3J 511-4J 511-6J 511-7J 511-8J 511-10J 511-11J 511-12 J 511-14J 511-16J 511-18J 511-20J 511-22J 511-24J 511-26J 511-28J 511-30J 511-32J 511-34J 511-36J 0.16 0.18 0.20 0.24 0.27 0.30

ST ez 724

Abstract: PM8356 GR-63-CORE tx 2G PMC-2012008
Contextual Info: 5: 51 PM QuadPHY FC ASSP Telecom Standard Product Data Sheet Preliminary Su nd ay ,0 4J an QuadPHY®FC ua ry ,2 00 4 11 :4 PM8356 Datasheet Preliminary Issue 5, December 2003 Do wn lo ad ed by ez z at i sm ae lo fs ilic on ex pe rt on Quad 1.0625/2.125 Gbit/s

Contextual Info: ► ► ► Molded Unshielded RF Coils SERIES 511 PH EN O LIC CORE LT4K 511-2J .16 50 25.0 525 .18 50 25.0 500 511-3J 511-4J .20 50 25.0 475 .24 51TT5J ' 45” 25.0 4T5 .27 45 25.0 400 511-7J .30 45 25.0 380 511-8J .36 45 345 511 10J 25.0 .39 45 25.0 330

380 volt 50 hz

Abstract: PMC-981070 PTR80 PM5357 LF 306-S PMC-1950820 06F04 RELAY EH-12 6222S 6308s
Contextual Info: 06 AM S/UNI-622-POS ASSP Telecom Standard Product Data Sheet Released un e, 20 04 02 :5 2: PM5357 ur sd ay ,2 4J S/UNI-622-POS Data Sheet Proprietary and Confidential Released Issue No. 6: June 2002 Do wn lo ad ed by k ha led sh eh ab of sil ico ne xp er to

mcoe

Contextual Info: MICRON T E C H N O L O G Y IN C 77 DE j t l l l S 4J DDDO' 14 b fl 1 ~ ^ 7. U i J I D ASSii lDfiaV b¿f ^ r f = f iä Ö ffiO IF S D ECRON TECHNOLOGY, INC. m 2805 East Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 T W X 910-970-5973 t (Micron Memory System Support Logic)

938-pin

Abstract: 74423 CODE MCS V12164
Contextual Info: r PCMCIA COMPONENTS: SINGLE DECK A SSEM BLY WITH N O N -E J E C T MECHANISM M « i ó Z TJ H P.C.B. L D C A T ID N DIM S s í Í c T Ü oj M 5C 3 a ü. i 0 _ [¡m _ 0 í r DIM X NDTE 5D SIU 111 8 5 .5 h S • M 5 E 4J î 9 3 .fi U a \ ri w “U D 54 B . « 1„

702x

Abstract: V610
Contextual Info: r THREADED INSERT 2X M « i Ó T3J S i i c fiï ¡IS S 0 i" l U 111 97,1 1 h S • M 5 E 4J £ I- H IV I* * u w u 3 □ 4*> I l i 3 "i bÊ ï± Ü-J - 41.91 - “ & e Î Î r■- f i 1.27 A i I T1 1.27 h h b b ih h k ì :h h » :« i i h ì k

peo 111

Abstract: NJU3501 PHY10
Contextual Info: • •• ••• ••• • • • •• oogpg? $gPS*>H> j 33J0 35 m > + Üiírd^'í Vf ^ I^ #EE> 0 S « äj«»5 H ] s 0 » K', * ; ia> H lïS s f - S - f ÿ ooÿ T iSiM'UJ SSSÉfMiiS^ I I M S Si~.i»i» —& 0X§| v'âa-æ 3-]!Í|BEt 4J -MWn WB

Contextual Info: 4J un e, 20 03 08 :1 9: 28 AM PM7386 FREEDM 32A1024 Data Sheet Released ed ne sd ay ,0 FREEDM 32A1024 DATA SHEET Released Issue 1: March 2003 Do wn lo ad ed by Co nt e nt Te a m of Pa rtm in er In co n W Frame Engine and Datalink Manager 32A1024 Proprietary and Confidential to PMC-Sierra, Inc., and for its Customers’ Internal Use

ExpressCard 34 mm cover

Abstract: EXP-26LMYG-S1CN2B3-TP S2008B ExpressCard 34 mm
Contextual Info: ¡Sheet ^ Ï □ Ê1 htóo è M : S M T^ : □ 0 3 5.1 ±o-2 deta i i S=5/1 S M T ^ Æ n ^ t U x ' f - : 16 CVI 6 3 JìlT I mm max. : ± 0 .3 : ± 0 .4 Not e LO I 0. 63£ëà.ê^â □ m i n . ) - ' ^^J bt óoè fê £ te è t)iM M T (^ J£ îo 4JÊIT : ± 0 .1

Contextual Info: V DO NOT SCALE D IM EN SIO N IN D RAW IN G PR OJECT CD M ETR IC NO. SIMILAR ITEM DWG. NO. O S D -35T2T-00 P I T C H = 12 .50 . H 0 4 o OJ INJ > — I m xi D >• o m z o CO CO o z R E V IS E D EC NO. o DRWN: KOR 1999-0120 H.C.RHO V 4J 9 9 / 12 /2 9 \/ V y

Contextual Info: 1. D im e n s i o n s : 3. E l e c t r i c a l Is o la tio n : Max Max Min 0 .0 2 5 E 0 .9 5 0 □□□□□□□□□□□□□□□□□□□□ X x o o Q o 4J— 0 . 0 3 0 O CD DO ro 's h XF0013Q 2 M ax- CD —J-|— 0 . 0 5 0 o ÖÖÖÖÖÖÖÖÖÖÖÖÖÖÖÖÖÖÖÖ

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R A LL 2 P U B L IC A T IO N R IG H TS LOC R E V IS IO N S D IS T RESERVED. C O P Y R IG H T D E S C R IP T IO N R EVISED TOP S P R IN G S T A IN L E S S S T E E L & PER 0 4J U L 12 ECO-1 2 - 0 1 2 3 2 0

4j 111

Contextual Info: ! ! ! " & ' ! ! * &+,- . /$ & 0+ 123 . $ 4 ) 0+56 . 7 4 8 4 8 # 97 ( #: ; 7 # ( ( # ; #= 7 ( 7 #( &+,>?@ : 7 7 #( 7 B 7C7 7 7 # 4 9A ! 8 7 (; ! ( 7 D >@E . ##8 $$F9 9 0I/ # H 7' 8 ( 7 # H 7' J ;& 49 L 7 ; #H K ! : A ! 9 :N 9 4 4 # 97 #: # 4 & ( 9 # < !

SR100K-6S

Abstract: SR70C-12 SR70C-16 SR70C-20 SR70C-24 SR70C-28 SR70C-32 SR70C-36 SR70C-40 SR70K-10R
Contextual Info: s 1 SR70K-12R SR70K-12S SR70K-2R SR70K-2S SR70K-4R CO05 O O to 2 S S S S s s s s s lo M IM M I*!« im iw iti m u m i a m ìi m « I W « » I I i | l i | l i | l i | l i | n i i ii i i i i i i i i i : 1111i 11; 11i 111 n i n i u n n i i l l l l n l l l l l l l l l l ll|H1ll|Mlll|

M338

Abstract: J300j nj037 2SA1338 2SC3392 marking al WA1 marking M338 NPN
Contextual Info: Ordering num ber:EN 1 4 2 1 A 2SA1338/2SC3392 No.1421A SANYO PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications I Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fT

TA8718N

Abstract: TA8659AN ta8718 ta8659 TA8718N-9 TA8718N-6 ta8659a ta8718k bhc capacitor ind a 1A8718N
Contextual Info: TO SH IBA INTEGRATED CIRCUIT T A 8 7 1 8N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT TECHNICAL DATA SILICON MONOLITHIC TENTATIVE BATA ^Ir EH-CHROMA-DEFLECT ION SY S T E M FOR A COLOR T E LEVISION PAL). The TA871BN c o m b i n e s a PAT. v i d c o - c h r o m a ^ d c f l e c t i o n

LJ2341R-1

Abstract: LJ2041R LJ7011 LJ2441R-1 LJ1241-1 lj2011 lj7041r LJ5741R LJ1241R-1 LJ3511-1
Contextual Info: PA CK A G E 3“* *f - E | o ; 2 Zz • ^T*M\-3»S s S ? = z E o o eg" * > bi « X a CC -l-z cc a kI 111 zee 3 E3 Z SO Z « CC o o z < or o <t IT Id CM CM CM CM o cc < m 3 • Ul c z « cc Z bJ Ul CC a a z < CM o a ul CL I a: u. UJ O 0: .0 o oÓ op ooo ooo

Contextual Info: Customer Information Sheet DRAWING N o . : S423-46 SHEET 3 OF 4| IF IN DOUBT - ASK | CO I N0T T0 SCALE I THIRD ANGLE PROJECTION | ALL DIMENSIONS IN 3.80±0. 05 0.80±0.03 19.00 COMPONENTS SHOWN REELED READY FOR INSERTION SB 10.11. 111 N A M E | 1SS | DATE

TC5064BP

Abstract: TC5065BP TC5065
Contextual Info: TC5064BP, TC5065BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC5064BP HEX HIGH VOLTAGE BUFFER WITH INHIBIT/NON INVERTING TYPE TC5065BP HEX HIGH VOLTAGE BUFFER WITH INHIBIT/INVERTING TYPE TC5064BP and TC5065BP contain six circuits of buffers having two common INHIBIT inputs Ai m , B i n •