4BSS452 Search Results

Diode SMD SJ 66A

Contextual Info: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY MOSFET and Schottky Diode • • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint

Contextual Info: • International Rectifier Data Sheet No. PD-6.078 IR 04 H420 HIGH VOLTAGE HALF-BRIDGE Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation

Contextual Info: 4055452 Q Q I S n b G54 • INR International Rectifier HEXFET Power MOSFET • • • • • • • PD-9.837 IRFI9540G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel 175°C Operating Temperature

Transistor BC 227

Contextual Info: PD-9.1620 International I R Rectifier IRG4 BC 2 0 K-S prelim inary Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =1 Ops, @360V VCE start , T j = 125°C, V ge = 15V

Contextual Info: International [ragRectifier PD — IRLI2505 PRELIMINARY H EXFET^ Power M OSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm

Contextual Info: Bulletin 12030/A International Rectifier 45L r .d s e r ie s STANDARD RECOVERY DIODES Stud Version Features 150A • Diffused diode ■ High current carrying capability ■ High voltage ratings up to 1 6 00V ■ High surge current capabilities ■ Stud cathode and stud anode version