4A COMPLEMENTARY TRANSISTOR Search Results

p107 to-220

Abstract: P102 P105 P107 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: @ S A N Y O SEMICONDUCTOR NPN TIP100 TIP101 TIP102 PNP TIP105 TIP106 TIP107 60-80-100 VOLTS, 8 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS HIGH CURRENT GAIN hFE = 4000 typ. @3V, 4A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @4A MONOLITHIC CONSTRUCTION WITH BUILT-IN

mosfet pch 3a 60v

Abstract: JESD97 STS4C3F60L
Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

ZXTN07012EFF

Abstract: ZXTP07012EFF ZXTP07012EFFTA
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

TS16949

Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

ZXTN25012EFH

Abstract: ZXTP25012EFH TS16949 ZXTP25012EFHTA
Contextual Info: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to

ZXTN25015DFH

Abstract: ZXTP25015DFH ZXTP25015DFHTA
Contextual Info: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to

ZXTN25015DFH

Abstract: ZXTP25015DFH ZXTP25015DFHTA
Contextual Info: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to

ZXTP25020CFH

Abstract: TS16949 ZXTN25020CFH ZXTP25020CFHTA
Contextual Info: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to

TS16949

Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
Contextual Info: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to

TS16949

Abstract: ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF marking 1d4
Contextual Info: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications

marking 1A3

Abstract: ZXTN25020DFH ZXTP25020DFH ZXTP25020DFHTA
Contextual Info: ZXTP25020DFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 4A VCE(sat) < 60 mV @ 1A RCE(sat) = 39 m⍀ PD = 1.25W Complementary part number ZXTN25020DFH Description C Advanced process capability and package design have been used to

TRANSISTOR MARKING 1d9

Abstract: ZXTP19060CFF TS16949 ZXTN19060CFF ZXTP19060CFFTA
Contextual Info: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications

ZETEX GATE DRIVER

Abstract: MARKING 1D4
Contextual Info: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications

marking 12W SOT23

Abstract: ZXTN2020F ZXTN2020FTA ZXTP2029F plc lamp 12W MARKING sot23
Contextual Info: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to

ZXTN25020BFH

Abstract: ZXTP25020BFH ZXTP25020BFHTA
Contextual Info: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to

marking 12W SOT23

Abstract: 12W MARKING sot23 IB100mA Marking 853
Contextual Info: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to

ZXTN25020BFH

Abstract: ZXTP25020BFH ZXTP25020BFHTA RBC-10K
Contextual Info: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to

OUTLINE DIMENSIONS in inche

Abstract: marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA
Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number: ZXTN2018F Description Advanced process capability and package design have been used to

TS16949

Abstract: ZXTN2018F ZXTP2027F ZXTP2027FTA
Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to

Contextual Info: HARRIS SEMICOND SECTOR D45VM Series SbE D • 43G2271 004GÛH2 707 « H A S File Number 2357 Silicon P-N-P Transistors Complementary to the D44VM Series Features: ■ Very Fast Switching ts < 500 ns resistive t f < 75 ns • Very low VCE Sat S 0.4V @ IC = 4A

Contextual Info: HARRIS SEMICOND File Number SECTOR SbE D • 4302271 0040fln 2351 32 4 « H A S D44VM Series T = 3 5 -/3 Silicon N-P-N Transistors Complementary to the D45VM Serles Features: ■ Fast Switching ts < 500 ns resistive tf<7Sns • Very Low VCE sat ^ 0.4V @ lc = 4A

TE2555

Abstract: 20AS 2SB1018A 2SD1411 2SD1411A
Contextual Info: 2SD1411A TOSHIBA TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 411 A HIGH CURRENT SW ITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • Low Saturation Voltage : V q ^ s a t “ 0.5V (Max.) at Iq = 4A Complementary to 2SB1018A M A X IM U M RATINGS (Ta = 25°C)

MOSFET

Contextual Info: ACE4612B Complementary Enhancement Mode Field Effect Transistor Description ACE4612B uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other