4A COMPLEMENTARY TRANSISTOR Search Results

PD115

Abstract: MJ2955 MJ2955 TRANSISTOR
Contextual Info: 1165912 Complementary silicon power transistors are designed for general-purpose switching and amplifier applications. Features: • • • • TO-3 DC current gain - hFE = 20 - 70 at IC = 4A dc. Collector-emitter saturation voltage-VCE (sat) = 1.1V dc (maximum) at IC = 4A dc.

p107 to-220

Abstract: P102 P105 P107 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: @ S A N Y O SEMICONDUCTOR NPN TIP100 TIP101 TIP102 PNP TIP105 TIP106 TIP107 60-80-100 VOLTS, 8 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS HIGH CURRENT GAIN hFE = 4000 typ. @3V, 4A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @4A MONOLITHIC CONSTRUCTION WITH BUILT-IN

Contextual Info: D45VM Series File Number 2357 Silicon P-N-P Transistors Complementary to the D44VM Series Features: • Very Fast Switching ts < 500 ns resistive tf < 75 ns ■ Very low VCE sat j < 0.4V @ IC = 4A ■ High gain H p ç > 4 0 @ i ç = 4A TERMINAL DESIGNATIONS

mosfet pch 3a 60v

Abstract: JESD97 STS4C3F60L
Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

JESD97

Abstract: STS4C3F60L s4c3f60l mosfet pch 3a 60v
Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

ZXTN07012EFF

Abstract: ZXTP07012EFF ZXTP07012EFFTA
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

TS16949

Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

ZXTN25012EFH

Abstract: ZXTP25012EFH TS16949 ZXTP25012EFHTA
Contextual Info: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to

zxtp25020cfh

Contextual Info: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to

ZXTN25015DFH

Abstract: ZXTP25015DFH ZXTP25015DFHTA
Contextual Info: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to

ZXTN25015DFH

Abstract: ZXTP25015DFH ZXTP25015DFHTA
Contextual Info: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to

ZXTN25020CFH

Abstract: ZXTP25020CFH ZXTP25020CFHTA small driver igbt
Contextual Info: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to

TS16949

Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
Contextual Info: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to

Contextual Info: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to

marking 1d4

Abstract: TS16949 ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF
Contextual Info: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications

Contextual Info: KTA1834D/L SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURES • Low Collector Saturation Voltage : VCE sat =-0.16V (Typ.) at (Ic=-4A, IB=-0.05A). • Large Collector Current. : Ic=_10A(dc) Ic=_15A(10ms, single pulse) • Complementary pair with KTC5001D/L.

TS16949

Abstract: ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF marking 1d4
Contextual Info: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications

marking 1A3

Abstract: ZXTN25020DFH ZXTP25020DFH ZXTP25020DFHTA
Contextual Info: ZXTP25020DFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 4A VCE(sat) < 60 mV @ 1A RCE(sat) = 39 m⍀ PD = 1.25W Complementary part number ZXTN25020DFH Description C Advanced process capability and package design have been used to

TRANSISTOR MARKING 1d9

Abstract: TS16949 ZXTN19060CFF ZXTP19060CFF ZXTP19060CFFTA
Contextual Info: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications

TRANSISTOR MARKING 1d9

Abstract: ZXTP19060CFF TS16949 ZXTN19060CFF ZXTP19060CFFTA
Contextual Info: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications

ZETEX GATE DRIVER

Abstract: MARKING 1D4
Contextual Info: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications

KTC5001D

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC5001D/L EPITAXIAL PLANAR PNP TRANSISTOR FEATURES • Low Collector Saturation Voltage : VcE sat =0.13V(Typ.) at (Ic=4A, IB=0.05A). • Large Collector Current. : Ic=10A(dc), Ic=15A(10ms, single pulse) • Complementary pair with KTA1834D/L.