495MW Search Results
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ITT Interconnect Solutions Z101495-MW |
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495MW Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MARKING 3D regulator 5V
Abstract: marking code E5 SMD ic power supply DVD schematic diagram smd marking e5 rf smd transistor marking ld3 LM4857 LM4857GR LM4857ITL LM4857SP
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lm4857495mwcsp-9-111c2csp-9-111s2+8 | |
3D smd marking
Abstract: LM4859 LM4859SP MARKING 3D regulator 5V
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lm4859495mwcsp-9-111c2csp-9-111s2+3 | |
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Contextual Info: MOSEL MS6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION >Available in 70/100 ns Max. >Automatic power-down when chip disabled • Lower power consumption: MS6264 - 495mW (Max.) Operating - 82.5mW (Max.) Standby - 11 mW (Max.) Power Down MS6264L - 467.5mW (Max.) Operating |
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ms6264495mwms6264ls6264-70pc+4 | |
SMD MARKING CODE 12w
Abstract: LM4859 LM4859SP LM4859TL MARKING 3D regulator 5V smd marking code 3D
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lm4859495mwsmd marking code 12wlm4859sp+3 | |
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Contextual Info: 19-1963; Rev 0; 2/01 EVALUATIO N KIT AVA ILABLE 16:1 Serializer, 3.3V, 2.5Gbps, SDH/SONET, with Clock Synthesis and LVPECL Inputs Features ♦ Single +3.3V Supply ♦ 495mW Power Consumption ♦ Exceeds ANSI, ITU, and Bellcore Specifications ♦ 155Mbps 16-bit wide Parallel to 2.5Gbps Serial |
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max389116-bit155mbps52mhz+1 | |
LM4857
Abstract: LM4857ITL LM4857SP marking code E5 SMD ic
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lm4857495mwlm4857itllm4857sp+1 | |
330nF capacitor
Abstract: LVDS Serializer MAX3867 MAX3880 MAX3890 MAX3890ECB
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495mw155mbps16-bit52mhz+9 | |
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Contextual Info: 19-1963; Rev 0; 2/01 ILABLE N KIT AVA EVALUATIO 16:1 Serializer, 3.3V, 2.5Gbps, SDH/SONET, with Clock Synthesis and LVPECL Inputs Features ♦ Single +3.3V Supply ♦ 495mW Power Consumption ♦ Exceeds ANSI, ITU, and Bellcore Specifications ♦ 155Mbps 16-bit wide Parallel to 2.5Gbps Serial |
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max389116-bit155mbps52mhz+4 | |
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Contextual Info: 19-1963; Rev 0; 2/01 ILABLE N KIT AVA EVALUATIO 16:1 Serializer, 3.3V, 2.5Gbps, SDH/SONET, with Clock Synthesis and LVPECL Inputs Features ♦ Single +3.3V Supply ♦ 495mW Power Consumption ♦ Exceeds ANSI, ITU, and Bellcore Specifications ♦ 155Mbps 16-bit wide Parallel to 2.5Gbps Serial |
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495mw155mbps16-bit52mhz+4 | |
ci smd cd3
Abstract: LM4844
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lm4844495mwci smd cd3 | |
TLA30CZA
Abstract: LM4859SP
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lm4859495mwtla30czalm4859sp | |
smd transistor marking ld3
Abstract: 2.5mm stereo jack plug 3D smd marking loud speaker MARKING 3D regulator 5V marking code E5 SMD ic SMD LD3 smd marking e5 rf smd marking f2 smd transistor LD4
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lm4844495mwcsp-9-111s2smd transistor marking ld3+9 | |
1LD5
Abstract: SMD LD3 smd marking e5 rf 7106D LM4844 LM4844TL
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lm4844495mw1ld5smd ld3+3 | |
smd marking e5 rf
Abstract: LM4857 LM4857GR LM4857ITL LM4857SP marking code E5 SMD ic
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lm4857495mwsmd marking e5 rflm4857gr+3 | |
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Contextual Info: LM4859 Stereo 1.2W Audio Sub-system with 3D Enhancement General Description Key Specifications The LM4859 is an integrated audio sub-system designed for stereo cell phone applications. Operating on a 3.3V supply, it combines a stereo speaker amplifier delivering 495mW per |
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lm4859495mw | |
DP83223V
Abstract: t592 PE-68515L s558-5999-46 "network interface cards" "Fast Link Pulse"
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dp83846asnls063e10base-t100base-tx+6 | |
toshiba 7 pin a215
Abstract: A227
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tc514800ajl/aftl70/80tc514800ajl/aftltoshiba 7 pin a215a227 | |
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Contextual Info: 1,M3,575 1,'ORDX 4 BIT DYNAMIC RAM * This is a ^ a n c e d information and specifications are subject to change without notice. DESCRIPTION The TC514400JL/ZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as |
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tc514400jl/zltc514400jl/zl-80tc514400jl/zl-- | |
TC511664BJl
Abstract: toshiba TC511664BJL TC511664
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tc511664bjltoshiba tc511664bjltc511664 | |
A302 w3
Abstract: aa z8b
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tc514410j/z-80tc514410j/z-10tc514410j/z514410j/z+3 | |
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Contextual Info: •HYUNDAI H Y 5 1 17 8 0 4 B ,H Y 5 1 16 8 0 4 B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process |
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HY5116100BContextual Info: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide |
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hy5116100bthehy5116100b1ad41-00-may9s4b750+3 | |
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Contextual Info: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating |
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hy51164001ad02-10-apr93hy5116400jchy5116400ljc+2 | |
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Contextual Info: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating |
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hy5116400a1ad23-10-may95hy5116400ajhy5116400aslj+2 | |