490 TRANSISTOR Search Results

Contextual Info: ERICSSON ^ PTB 20200 30 Watts, 450 - 490 MHz Cellular Radio RF Power Transistor Preliminary Description Key Features The 20200 is a class AB, NPN, common emitter RF Power Transistor intended for 24 V D C operation across the 450-490 MHz frequency band. It is rated at 30 Watts minimum output

OP490

Abstract: DP-490
Contextual Info: DP-490 FMI LOW-VOLTAGE MICROPOWER QUAD OPERATIONAL AMPLIFIER mm FEATURES GENERAL DESCRIPTION • The OP-490 is a high performance micropower quad op amp that operates from a single supply o f +1,6V to +36V or from dual supplies of ±0.8V to ±18V. Input voltage range includes the

50 33g

Abstract: TRIO TA 80W stk*0460 600 DKZ 15Wx2 5247 MG-200 STK400-490 STK401-20 K30V
Contextual Info: Ordering number: EN 5247 Thick Film Hybrid 1C STK400-490 No. 5247 3ch AF Power Amplifier Split Power Supply 25W + 50W + 25W.THD = 0.4% Overview Package Dimensions The STK400-490 is an audio power'amplifier IC for multi­ channel speaker applications. It comprises two 25W chan­

OP490

Contextual Info: Low-Voltage Micropower Quad Operational Amplifier OP-490 A N ALO G D EVIC ES FEATURES GENERAL DESCRIPTION • The OP-490 is a high-performance micropowerquad op amp that operates from a single supply of +1.6V to +36V or from dual supplies of +0.8V to +18V. Input voltage range includes the

ic 5247

Abstract: vg40t 2 channel 100w audio amplifier circuit diagram T20 02 MG-200 STK400-490 50W TRANSISTOR AUDIO AMPLIFIER
Contextual Info: Ordering number: EN 5247 Thick Film Hybrid 1C No. 5247 S A \Y O STK400-490 3ch A F Power Amplifier Split Power Supply 25W + 50W + 25W, THD = 0.4% I Overview Package Dimensions The STK400-490 is an audio power amplifier IC for multi­ channel speaker applications. It comprises two 25W chan­

TRANSISTOR JC

Abstract: STK400-490 FL 210 transistor
Contextual Info: Ordering number:ENN5247 Thick Film Hybrid IC STK400-490 3ch AF Power Amplifier Split Power Supply (25W + 50W + 25W, THD = 0.4%) Overview Package Dimensions The STK400-490 is an audio power amplifier IC for multichannel speaker applications. It comprises two 25W channels (left and right) and a 50W channel (center) in a single

TRANSISTOR JC

Contextual Info: Ordering number:ENN5247 Thick Film Hybrid IC STK400-490 3ch AF Power Amplifier Split Power Supply (25W + 50W + 25W, THD = 0.4%) Overview Package Dimensions The STK400-490 is an audio power amplifier IC for multichannel speaker applications. It comprises two 25W channels (left and right) and a 50W channel (center) in a single

ka 40w trio

Abstract: TRIO TA 80W stk 490 110
Contextual Info: Ordering number : EN 5247 Thick Film Hybrid 1C STK400-490 AF Power Amplifier Split Power Supply (25W + 50W + 25W min, THD = 0.4%) Overview Package Dimensions T he S T K 400-490 is an audio pow er am plifier IC for m ulti­ channel speaker applications. It com prises two 25W chan­

potential divider

Abstract: DTC343T UMD2N UMT6 SC-88 FMG5 IMD14 DTC314T EMD12 EMG5 IMD16A
Contextual Info: Digital Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Complex Digital Transistors PNP/NPN Combination Circuits Package Configuration Surface Mount Type Packages Application VMT3 EMT3 Flat lead SC-89 ‹SOT-490› Potential divider type Leak absorption type

BC490A

Abstract: bc490
Contextual Info: BC490, BC490A, BC490B High Current Transistors PNP Silicon • Device Marking: 490 Device Marking: 490A Device Marking: 490B http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –80 Vdc Collector-Base Voltage

bc490

Abstract: BC490B BC490A BC490AZL1 BC490BZL1
Contextual Info: BC490, BC490A, BC490B High Current Transistors PNP Silicon • Device Marking: 490 Device Marking: 490A Device Marking: 490B http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –80 Vdc Collector-Base Voltage

bc490

Abstract: bc490a
Contextual Info: BC490, BC490A, BC490B High Current Transistors PNP Silicon • Device Marking: 490 Device Marking: 490A Device Marking: 490B http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO −80 Vdc Collector-Base Voltage

5 pin relay 3vdc

Abstract: RLK39-55 H160 SPST relay LK39
Contextual Info: Photoelectric Sensors Series 39 Compact Style Sensors Diffused Mode Retro-Reflective Mode See pages 488-489 See pages 490-491 Features: • Fast response times for transistor outputs • Selectable light on/dark on operating modes Sensing Ranges: 800mm, 2m

Contextual Info: TSDF1250F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a

SOT-490

Abstract: TSDF1220F
Contextual Info: TSDF1220F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a

Contextual Info: TSDF1205F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a

SOT-490

Abstract: TSDF1220F
Contextual Info: TSDF1220F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a

TSDF1250F

Contextual Info: TSDF1250F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a

SOT-490

Abstract: TSDF1205F
Contextual Info: TSDF1205F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a

TSDF1205F

Contextual Info: TSDF1205F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a

TSDF1220F

Contextual Info: TSDF1220F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a

Contextual Info: TSDF1205F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a

093.266

Abstract: pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502
Contextual Info: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Prelim inary data • For high power amplifiers • Compression point P_1dB = 26.5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency ^ > 1 7 GHz • Gold metalization for high reliability

pin diagram of bf 494 transistor

Abstract: siemens products transistor
Contextual Info: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability