48M MARKING Search Results

Contextual Info: SSG8N10 8A , 100V , RDS ON 48mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free SOP-8 DESCRIPTION The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

Contextual Info: AP9979GH/J RoHS-compliant Product Advanced Power Electronics Corp. Low Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS Single Drive Requirement RDS ON Surface Mount Package ID 60V 48m 20A G S Description Advanced Power MOSFETs from APEC provide the designer with

FDD4243

Abstract: FDD4243-F085
Contextual Info: FDD4243_F085 P-Channel PowerTrench MOSFET -40V, -14A, 64mΩ Features Applications „ Typ rDS on = 36mΩ at VGS = -10V, ID = -6.7A „ Inverter „ Typ rDS(on) = 48mΩ at VGS = -4.5V, ID = -5.5A „ Power Supplies „ Typ Qg(TOT) = 21nC at VGS = -10V „ High performance trench technology for extremely low

SOT23-6

Abstract: SSF2429 "battery protection" battery protection sot23-6 TOP marking sot23-6
Contextual Info: SSF2429 DESCRIPTION D The SSF2429 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G GENERAL FEATURES S ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V

APM3054ND

Abstract: apm3054 sot89 MARKING 3C 48M025 APM3054N STD-020C
Contextual Info: APM3054ND N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/4A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

88N30W

Contextual Info: Advanced Power Electronics Corp. AP88N30W-HF-3 N-channel Enhancement-mode Power MOSFET Low On-Resistance D Simple Drive Requirement Fast Switching Characteristics G BV DSS 300V R DS ON 48mΩ ID 48A S Description Advanced Power MOSFETs from APEC provide the designer with the best

Contextual Info: GDSSF2429 DESCRIPTION D The SSF2429 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G GENERAL FEATURES S ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V

APM3054N

Abstract: 0118-B transistor apm3054n equivalent J-STD-020A marking 8A* sot-223 m3054n
Contextual Info: APM3054N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/15A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Package 1

DMN2075

Abstract: DMN2075UDW-7
Contextual Info: DMN2075UDW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on max V(BR)DSS TA = 25°C 48mΩ @ VGS = 4.5V 2.8A 59mΩ @ VGS = 2.5V 2.6A 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

SSF3402

Abstract: "battery protection" 3402 transistor
Contextual Info: SSF3402 D DESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.5V

9979GH

Abstract: AP9979GH
Contextual Info: AP9979GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 60V ▼ Single Drive Requirement RDS ON 48mΩ ▼ Surface Mount Package ID ▼ Low Gate Charge D 20A G S Description Advanced Power MOSFETs from APEC provide the designer with

Contextual Info: PPJA3406 30V N-Channel Enhancement Mode MOSFET Voltage 30 V 4.4A Current SOT-23 Unit: inch mm Features  RDS(ON) , VGS@10V, ID@4.4A<48mΩ  RDS(ON) , VGS@4.5V, ID@2.8A<70mΩ  Advanced Trench Process Technology  Specially Designed for switch Load, PWM applications,

4511gh

Abstract: 4511g transistor 4511gh AP4511GH AP4511 mosfet VDS 30V ID 6A TO 252 To-252
Contextual Info: AP4511GH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 RDS ON 30mΩ ID P-CH BVDSS RDS(ON) ID 15A -35V 48mΩ -12A ▼ Good Thermal Performance ▼ Fast Switching Performance

cm03x

Abstract: APM2603 M03X APM2603C STD-020C
Contextual Info: APM2603C P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-4A, RDS ON =48mΩ(typ.) @ VGS=-4.5V RDS(ON)=85mΩ(typ.) @ VGS=-2.5V RDS(ON)=135mΩ(typ.) @ VGS=-1.8V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-6

transistor apm3054n equivalent

Abstract: A102 APM3054N APM3054NU APM3054
Contextual Info: APM3054NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/20A, RDS ON =48mΩ (typ.) @ VGS=10V RDS(ON)=75mΩ (typ.) @ VGS=4.5V • • • G D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available

A102

Abstract: APM3054N APM3054NV 4A SOT223 MARKING CODE
Contextual Info: APM3054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/4A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • G D Super High Dense Cell Design S Reliable and Rugged Top View of SOT-223 Lead Free and Green Devices Available

Contextual Info: APM3054NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

M03X

Contextual Info: APM2603C P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-4A, RDS ON =48mΩ(typ.) @ VGS=-4.5V RDS(ON)=85mΩ(typ.) @ VGS=-2.5V RDS(ON)=135mΩ(typ.) @ VGS=-1.8V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-6

3054n

Abstract: A102 APM3054NV STD-020C 864V
Contextual Info: APM3054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/4A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of SOT-223 Lead Free Available (RoHS Compliant)

Contextual Info: Advanced Power Electronics Corp. AP2329GN-HF-3 P-channel Enhancement-mode Power MOSFET D Simple Drive Requirement BV DSS Lower On-resistance Surface Mount Device R DS ON G RoHS-compliant, halogen-free -30V 48mΩ ID S -4.3A Description Advanced Power MOSFETs from APEC provide the designer with the best

IC tl 072

Abstract: APM3054ND STD-020C
Contextual Info: APM3054ND N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/4A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • G D Super High Dense Cell Design S Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

apm3054

Abstract: A102 APM3054N APM3054ND marking code IR SOT89
Contextual Info: APM3054ND N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/4A, RDS ON =48mΩ(typ.) @ VGS=10V G RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Top View of SOT-89 Reliable and Rugged (2) D Lead Free and Green Devices Available

ZXTN25060BZTA

Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
Contextual Info: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in

Contextual Info: APM2101SG P-Channel Enhancement Mode MOSFET Pin Description Features • D -20V/-3.5A, D D RDS ON = 48mΩ(typ.) @ VGS= -4.5V D RDS(ON)= 75mΩ(typ.) @ VGS= -2.5V G RDS(ON)= 135mΩ(typ.) @ VGS= -1.8V • • • S Super High Dense Cell Design S S Reliable and Rugged