48DBM HIGH POWER FET 2.4GHZ Search Results

11293

Contextual Info: HWF1688RA HSXAWAVS High Power GaAs FET September 1998 Rev.B Features • High Output Power PidB=36.5dBm typ. @2.4GHz • High Gain G l= OUTLINE DRAWING 12.5dB(typ.)@2.4GHz 1.625(0.065) • High Efficiency T|add =40%(typ.)@2.4GHz • High Linearity IP3=48dBm(typ.)@2.4GHz

Contextual Info: HWF1682CM HSXAWAVE High Power GaAs FET August 1998 Rev. A Features • High O u tp u t Pow er O U TLIN E D R A W IN G Pi<ffi=37dBm typ. @2.4GHz • High G ain 17.50 Gl= 12.5dB(typ.)@2.4GHz • High Efficiency • High L inearity Tjadd =40%(typ.)@2.4GHz IP3=48dBm(typ.)@2.4GHz

P0110009P

Abstract: gaas fet marking a ISO-14001 KP029J P0120009P RR0816 48dBm High power fet 2.4ghz
Contextual Info: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package

P0110009P

Abstract: Susumu RL series part Marking KP029J P0120009P RR0816 marking c7 sot-89
Contextual Info: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure

pt 2358

Abstract: 159330 17089
Contextual Info: HWF1681NC HEXAWAVE High Power GaAs FET September 1998 Features • H igh O u tp ut Pow er • H igh G ain • H igh Efficiency • H igh L inearity • Class A o r Class AB O peration Outline Drawing PidB=34.5dBm typ. @2.4GHz Gl= 12dB(typ.)@2.4GHz r|a d d

hwf1682ra

Contextual Info: HWF16S2RA HEXAWAVE High Power GaAs FET September 1998 Rev.B Features • H ig h O u tp u t P o w e r O U T L I N E D R A W IN G P id B = 3 7 d B m ty p . @ 2 .4 G H z • H ig h G a in • H ig h E fficien cy • H ig h L in e a r ity G l=1 1.5dB(typ.)@2.4GHz

gl 1117 B

Abstract: gl 1117 ax gs 1117 ax QM 1117 sn 0716 173300 TA 8644
Contextual Info: HWF1681RA HSXAWAVS High Power GaAs FET Rev.B S eptem bet998 Features • H ig h O u tp u t P ow er PidB=34.5dBm typ. @ 2.4G H z • H ig h G ain • H ig h E fficiency O U T L IN E D R A W IN G Gl= 15dB(typ.)@2.4GHz 1.625(0.065) Tjadd =43%(typ.)@2.4GHz •

PIC16F72 inverter ups

Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
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qualcomm msm 8660

Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
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