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    4850P Search Results

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    WEE H12WD4850PG

    SSR RELAY PANEL MOUNT IP00 660VA
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    DigiKey H12WD4850PG Bulk 3,330 3
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    Holt Integrated Circuits Inc HI-4850PSIF

    IC TRANSCEIVER HALF 1/1 8SOIC
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    DigiKey HI-4850PSIF Tube 310 1
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    WEE CWD4850P

    SSR RELAY PANEL MOUNT IP20 660VA
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    DigiKey CWD4850P Bulk 26 2
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    Crydom Inc CWA4850P

    SSR RELAY SPST-NO 50A 48-660V
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    DigiKey CWA4850P Bulk 24 1
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    Newark CWA4850P Bulk 20
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    RS CWA4850P Bulk 14 Weeks 20
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    TME CWA4850P 1
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    Master Electronics CWA4850P 45
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    Sager CWA4850P 1
    • 1 $92.44
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    Crydom Inc H12D4850PG

    SSR RELAY SPST-NO 50A 48-530V
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    DigiKey H12D4850PG Bulk 21 1
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    Newark H12D4850PG Bulk 2
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    RS H12D4850PG Bulk 14 Weeks 1
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    Bristol Electronics H12D4850PG 15 1
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    TME H12D4850PG 1
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    Master Electronics H12D4850PG 15
    • 1 $86.59
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    Neutron USA H12D4850PG 36
    • 1 $260.61
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    Sager H12D4850PG 1
    • 1 $82.03
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    4850P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    a1712 mosfet

    Abstract: A1712
    Contextual Info: Ordering number : ENA1712A ATP214 N-Channel Power MOSFET http://onsemi.com 60V, 75A, 8.1mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.) Halogen free compliance •


    Original
    ENA1712A ATP214 4850pF PW10s) PW10s, L100H, A1712-7/7 a1712 mosfet A1712 PDF

    A1712

    Abstract: a1712 mosfet
    Contextual Info: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)


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    ATP214 ENA1712A 4850pF A1712-7/7 A1712 a1712 mosfet PDF

    a1712

    Abstract: a1712 mosfet a1712-1 ENA1712
    Contextual Info: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance


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    ENA1712 ATP214 4850pF PW10s) PW10s, A1712-4/4 a1712 a1712 mosfet a1712-1 ENA1712 PDF

    a1712 mosfet

    Abstract: A1712
    Contextual Info: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)


    Original
    ATP214 ENA1712A 4850pF A1712-7/7 a1712 mosfet A1712 PDF

    a1712

    Abstract: a1712 mosfet a1712 transistor a1712-1 ATP214 ENA1712 A1712-4
    Contextual Info: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance


    Original
    ATP214 ENA1712 4850pF PW10s, PW10s) A1712-4/4 a1712 a1712 mosfet a1712 transistor a1712-1 ATP214 ENA1712 A1712-4 PDF

    A1712

    Abstract: a1712 mosfet a1712-1 A1712-4 4850p S4850 ATP214
    Contextual Info: ATP214 注文コード No. N A 1 7 1 2 三洋半導体データシート N ATP214 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=6.2mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=4850pF(typ.)


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    ATP214 4850pF JEDET15696 IT15711 IT15514 A1712-3/4 A1712 a1712 mosfet a1712-1 A1712-4 4850p S4850 ATP214 PDF

    spf 9001

    Abstract: sf hd60 AS0242 scr 1a 1200V CMX20003 MML 400 E1 cx240d5 SFE 5.5 MC CX24005 crouzet typ 900
    Contextual Info: • P C B ■ D IN § S / l $ ^ ■ a w « » Solid State Relays TECHNOLOGIES c r y c Ê o m ìS ìt , 1 9 9 3 ^5 ^, ïÆ M W a io o o ^ Æ iâ i+0 C r y d o m m f iS M W T iju a n a á < J í S l^ f t 1 0 : # á iW x r ilí 3 Í 7 I S 0 9 0 0 2 > A iE ,


    OCR Scan
    CX241/MCX241 LC241 D12/D24, A12/A24 VHA60 X4IAC/X40AC/X4JDC/X40DC spf 9001 sf hd60 AS0242 scr 1a 1200V CMX20003 MML 400 E1 cx240d5 SFE 5.5 MC CX24005 crouzet typ 900 PDF

    rqa200n03

    Abstract: 4850p 7111 00E-6 rqa200
    Contextual Info: SPICE PARAMETER RQA200N03 by ROHM TR Div. * RQA200N03 NMOSFET model * Date: 2007/07/24 *D G S .SUBCKT RQA200N03 1 2 3 M1 11 22 3 3 MOS_N C1 1 3 100p D1 3 1 DDS R1 1 11 RTH 1.5m D2 11 21 DDG D3 22 21 DDG R2 2 22 8 .MODEL MOS_N NMOS + LEVEL=3


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    RQA200N03 RQA200N03 0000E-6 29E-6 0000E-3 000E6 4850p 4850p 7111 00E-6 rqa200 PDF