4800 SO8 Search Results

4800

Abstract: MARKING SO8
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Document No. PD-00223 Version E Title SO-8 PACKAGE MARKING DESCRIPTION DJI Ôf> 4800 FAYWLT O Green product NOTE: LOGO 4800 F A Y W L&T - AOS Logo - Part number code - Fab code - Assembly location code - Year code - Week code - Assembly lot code

MIL-STD-202 METHOD 301

Abstract: MIL-STD-1344, Method 3001
Contextual Info: _! CONTECH RESEARCH, INC, -~ -iiv - - - - - MAY 16, 1389 TEST REPORT ii89189 VERIFICATION TESTISG PART NUMBER: SS-120-T-2N SPECIFICATION: AJCO88 SAMTEC CORPORATICN 67 MECHANIC STREET AITLEBORO, MASSACHUSEllS 02703 SO8/ 226-4800 MAY 16, 1989 TEST REPORT #89189

Contextual Info: FOR IMMEDIATE RELEASE Joseph Liu Chief Financial Officer Diodes Incorporated 805 446-4800 Phillip Bourdillon/Ken Kline Corporate Communications KBL Associates, Inc. (818) 583-8091 DIODES REPORTS SECOND QUARTER RESULTS Westlake Village, California — July 26, 1996 — Diodes Incorporated (ASE: DIO)

ir active bandpass filter circuit diagram

Abstract: ir preamplifier
Contextual Info: U 2537 B TELEFUNKEN Semiconductors IR Preamplifier Technology: Bipolar Case: SO8 Features: D Few external components D Low power consumption D Microcomputer compatible D Insensitive to ambient light, also in the case of continuous interference sources D output polarity programmable

ir active bandpass filter circuit diagram

Abstract: ir preamplifier AC ENERGY SAVING CIRCUIT DIAGRAM II-07 active bandpass filter 300 khz
Contextual Info: U 2537 B TELEFUNKEN Semiconductors IR Preamplifier Technology: Bipolar Case: SO8 Features: D Few external components D Low power consumption D Microcomputer compatible D Insensitive to ambient light, also in the case of continuous interference sources D output polarity programmable

OM4031T

Abstract: UAA2080 UAA2080H UAA2082 FSK receiver philips Pager receiver philips
Contextual Info: INTEGRATED CIRCUITS DATA SHEET OM4031T Digital post-detection filter for FSK data receivers Preliminary specification File under Integrated Circuits, IC03 Philips Semiconductors October 1994 Philips Semiconductors Preliminary specification Digital post-detection filter

ao4800

Abstract: 4800 so-8 aos Lot Code Week 4800 SO8
Contextual Info: AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck

Contextual Info: Preliminary Specifications Low Cost SMT Low Pass Filter DC - 2000 MHz FLO7-0002-G V1.00 Features ● ● ● ● ● ● SO-8 Small Size and Low Profile Industry Standard SOIC-8 SMT Plastic Package Superior Repeatability Typical Insertion Loss 0.5 dB Typical Rejection 20 dB

7F MARKING

Abstract: APM4800 J-STD-020A ANPEC
Contextual Info: APM4800 N-Channel Enhancement Mode MOSFET Features Pin Description SO-8 • 30V/8A , RDS ON =15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged S 1 8 D S 2 7 D S 3 6

T7525EC

Abstract: b562* Transistor Transistor BFT 98 LL4148F smd transistor SA4 transistor SMD PB01 A1s smd TRANSISTOR npo 121 j kck TGS 816 DSP16A
Contextual Info: A T & T flELEC I C b>4E » • Q05QQ2b GQGcm3G 4 b l MATTc! * Data Sheet February 1993 A lsr Microelectronics AT&T V32x-V42D V.32bis/FAX/V.42bis DeskTop Complete Modem Chip Sets Introduction The AT&T DeskTop Complete Modem Chip Set enables the modem designer to build a high-speed,

Contextual Info: IRL6283MTRPbF DirectFET N-Channel Power MOSFET  Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified VDSS

Contextual Info: IRL6283MTRPbF DirectFET N-Channel Power MOSFET  Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified VDSS

Contextual Info: PD - 96332B IRF9395MPbF IRF9395MTRPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application

Contextual Info: IRL6297SDPbF DirectFET Dual N-Channel Power MOSFET ‚ Typical values unless otherwise specified Applications l Charge and Discharge Switch for Battery Application l Isolation Switch for Input Power or Battery Application VDSS Environmentaly Friendly Product

Contextual Info: IRF9383MPbF DirectFET P-Channel Power MOSFET ‚ Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V

IRF938

Abstract: 60v 10KHz ir MOSFET
Contextual Info: PD - 97708 IRF9383MPbF IRF9383MTRPbF DirectFET P-Channel Power MOSFET ‚ Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on)

irf9395

Contextual Info: PD - 96332A IRF9395MPbF IRF9395MTRPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application

Contextual Info: PD - 97708 IRF9383MPbF IRF9383MTRPbF DirectFET P-Channel Power MOSFET ‚ Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on)

Contextual Info: StrongIRFET IRL6283MTRPbF DirectFET N-Channel Power MOSFET  Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified

Contextual Info: IRF9395MTRPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits

IRF938

Abstract: IRF9383 IRF9383MTR1PBF 20V P-Channel Power MOSFET 500A irf93
Contextual Info: PD - 97708 IRF9383MPbF IRF9383MTRPbF DirectFET P-Channel Power MOSFET ‚ Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on)

irf9395

Abstract: IRF9395M IRF9395MTR1PBF IRF9395MTRPBF
Contextual Info: PD - 96332A IRF9395MPbF IRF9395MTRPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application

Contextual Info: IRF9395MPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits

MAAMSS0048

Abstract: MAAL-007306 MAAMSS0017 PQFN-16 wimax components MAAP-003438-010PP0 MASWSS0006 MASW-007107 cpe wimax MAFR-000121-5D4S1T
Contextual Info: WiMAX broc_Feb08_singles_r2.qxd 3/18/08 3:13 PM Page 1 M/A-COM WiMAX components for next generation wireless February 2008 WiMAX broc_Feb08_singles_r2.qxd 3/18/08 3:13 PM Page 2 M/A-COM WiMAX Mobile and Customer Premises Equipment CPE WiMAX Mobile The newly ratified IEEE 802.16e standard allows manufacturers to begin introducing