4800 SMD Search Results
4800 SMD Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TPN4800CQH | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 150 V, 18 A, 0.048 Ω@10 V, TSON Advance | Datasheet | ||
| 10147073-2600RLF | Amphenol Communications Solutions | Minitek® Microspeed 1.00mm, Board-to-Board Connector, Right Angle Receptacle SMD 26P, Poka yoke | |||
| 10147074-4400RLF | Amphenol Communications Solutions | Minitek® Microspeed 1.00mm, Board-to-Board Connector, Right Angle Receptacle SMD 44P, Poka yoke | |||
| 10150098-3200RLF | Amphenol Communications Solutions | Minitek®MicroSpeed 1.00mm Board-to-Board Connector,Vertical Header SMD 32P | |||
| 10150095-3200RLF | Amphenol Communications Solutions | Minitek®MicroSpeed 1.00mm Board-to-Board Connector,Right Angle Receptacle SMD 32P |
4800 SMD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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sqc575047
Abstract: SMD 0410 SQC575047T
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sqc575047sqc575047t-r12-nsqc575047t-r27-nsqc575047t-r47-n+8 | |
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Contextual Info: SMD Wire Wound Ceramic Chip Inductors – CT0805 Series Electrical Characteristics Rdc Ω Max Irms (mA) Max Color 9400 6100 0.03 0.06 800 800 Black Brown 1000 5500 0.06 800 Red 1000 5500 0.08 800 Orange 50 1000 4800 0.08 800 Yellow 55 750 3300 0.08 800 Green |
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ct080505-r75ct0805-r82ct0805-1r0+4 | |
mosfet 4800
Abstract: ,mosfet smd 4800 4800 power mosfet 4800 mosfet 2SJ606 ,Transistor smd 4800
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2sj606o-263--42amosfet 4800+4 | |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 190 MHz Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 600 Ω ±25% Z 4800 Ω typ. IR RDC 200 |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 190 MHz Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 600 Ω ±25% Z 4800 Ω typ. IR RDC 200 |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 190 MHz Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 600 Ω ±25% Z 4800 Ω typ. IR RDC 200 |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 190 MHz Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 600 Ω ±25% Z 4800 Ω typ. IR RDC 200 |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 190 MHz Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 600 Ω ±25% Z 4800 Ω typ. IR RDC 200 |
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L-T670LGCT
Abstract: ED-4702 light sensor 3 bin S020 T650 T670 3528 plcc CAS140B JEITA ED-4701-300 smd code ky
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l-t670lgctds-7a-07-0005para-for-065ansi/eia-481-b-2001+13 | |
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Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 190 MHz Rated Current ΔT = 20K DC Resistance Type Value Unit Tol. Z 600 Ω ±25% Z 4800 Ω typ. IR RDC 200 mA max. 0.65 |
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Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 190 MHz Rated Current ΔT = 20K DC Resistance Type Value Unit Tol. Z 600 Ω ±25% Z 4800 Ω typ. IR RDC 200 mA max. 0.65 |
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PHILIP qs
Abstract: ISO-9000
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od-323ot-323ot-363philip qs+1 | |
KY gel
Abstract: 3528 led taiwan T650 13t smd SMD 3528 PLCC-2 Para Light Electronics light sensor 3 bin S020 T670 smd T-67
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l-t670lgct-mtds-7a-07-0005para-for-065ansi/eia-481-b-2001+14 | |
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Contextual Info: DC/DC Converters THB 3 Series, 3 Watt CB Scheme Features ◆ Supplementary and reinforced insulation ◆ I/O isolation 4800 VACrms rated for IEC 60950-1 UL 60950-1 UL 60950-1 IEC 60601-1 UL 60601-1 1000 Vrms 1410 Vpk working voltage ◆ Medical safety to ES 60601-1 and |
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en55022 | |
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LTB-2012-5G5H6-D1
Abstract: LTB-2012-2G4H6-A1 LTB-2012-2G4H6-A9 LTB-2012-2G4H6-A18 LTB-2012-2G4H6-A3 LTB-2012-2G4H6 LTB-2012-2G4H6-A2 MAG.LAYERS LTB ltb-2012-2g4h6-a8 LTB-2520-2G4H6-A4
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ltb-2520-2g6h6-a1ltb-2520-2g6h6-a2ltb-1608-3g5h6-a1ltb-2012-3g6h6-a1+15 | |
Band Pass Filter
Abstract: LTB-2012-2G4H6 20122G LTB-2012-2G4H6-A18 LTB-2012-2G4H6-A2 LTB-2520-2G3H6-A2 LTB-2012-2G4H6-A1 ltb-2012 MAG.LAYERS LTB AT/S3C84E9
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11700mhzltb-2012-5g5h6-b3ltb-2012-5g5h6-c5ltb-2012-5g7h6-a1+10 | |
4800 smd
Abstract: CapXon 105 820 10X10 CapXon series capxon esr smd SMD 4800
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1000hrs2500f120hz20120hz+8 | |
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Contextual Info: Low Temperature Cofired Ceramics Series CUTTUNG-EDGE TECHNOLOGY OF RF SOLUTION LTCC 低温共烧陶瓷 • Feature 特点 Compact Size 体积小 Miniaturized SMD packaged in low profile and lightweight. Low Loss 低插入损耗 Low insertion loss, high attenuation. |
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7500mhzbbf-201224005000mhzbbf-20123300+5 | |
MAG.LAYERS BBFContextual Info: Low Temperature Cofired Ceramics Series CUTTUNG-EDGE TECHNOLOGY OF RF SOLUTION LTCC 低 温 共 烧 陶瓷 • Feature 特 点 Compact Size 体 积 小 Miniaturized SMD packaged in low profile and lightweight. Low Loss 低 插 入 损 耗 Low insertion loss, high attenuation. |
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bbf-20122400bbf-25202500bbf-20123300mag.layers bbf | |
MAG.LAYERS BBFContextual Info: Low Temperature Cofired Ceramics Series CUTTUNG-EDGE TECHNOLOGY OF RF SOLUTION LTCC 低温共烧陶瓷 • Feature 特点 Compact Size 体积小 Miniaturized SMD packaged in low profile and lightweight. Low Loss 低插入 低插入损耗 Low insertion loss, high attenuation. |
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bbf-20122400bbf-25202500bbf-20123300mag.layers bbf | |
co-fired
Abstract: MAG.LAYERS LTD LTD-2012
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ltd-2012-2g4s1-a1111700mhz2g4s1-a12+3 | |
Diplexer
Abstract: LTD-1608 MAG.LAYERS LTD LTD-2012 and/OLOA 4900 C
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ltd-2012-diplexerltd-1608mag.layers ltd+2 | |
capxon
Abstract: CapXon 105 820 CapXon series CapXon 820
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1000hrs3300f120hz20120hz+7 | |
S 1040 smdContextual Info: SMD Wire Wound Ceramic Chip Inductors – LCN 0402 Series Electrical Characteristics Part Number Inductance nH Test Frequency (MHz) Tolerance (±%) Q Min SRF (MHz) Min Rdc (Ω) Max Irms (mA) Max LCN0402T-1N5□-S 1.5 250 10 / 5 15 11300 0.050 1040 LCN0402T-2N0□-S |
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lcn0402t-1n5-slcn0402t-2n0-slcn0402t-2n2-slcn0402t-3n3-s+7 | |