48-PIN TSOP I Search Results

MX23L3213

Abstract: MX23L3213TC-12 MX23L3213TC-70 MX23L3213TC-90 MX23L3213TI-10 MX23L3213TI-70 MX23L3213TI-90 tsop 48 PIN
Contextual Info: MX23L3213 32M-BIT MASK ROM FEATURES PIN DESCRIPTION • Bit organization - 4M x 8 byte mode - 2M x 16 (word mode) • Fast access time - Random access:70ns(max.) • Current - Operating:16mA - Standby:5uA • Supply voltage - 2.7V ~ 3.6V • Package - 48 pin TSOP (12mm x 20mm)

TSOP 86 Package

Abstract: tsop 38 MX23L3210 MX23L3210MC-10 MX23L3210MC-12 MX23L3210MC-15 MX23L3210RC-70 MX23L3210TC-10 MX23L3210TC-12 MX23L3210TC-15
Contextual Info: MX23L3210 32M-BIT 4M x 8 / 2M x 16 Mask ROM FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access:70ns (max.) for 3.0V~3.6V 90ns (max.) for 2.7V~3.6V • Current - Operating:40mA - Standby:15uA

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

48-PIN

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32040AL, 23C32080AL 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C32040AL and µPD23C32080AL are 33,554,432 bits mask-programmable ROM. The word organization is

KS32P6632

Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
Contextual Info: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor

23c128

Abstract: 48-PIN
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C128040BL, 23C128080BL 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C128040BL and µPD23C128080BL are a 134,217,728 bits mask-programmable ROM. The word

Contextual Info: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip

SM81600E

Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

MR27V1652D

Abstract: DIP42-P-600-2 MR27V1652DMA MR27V1652DRA
Contextual Info: ¡ Semiconductor 1A MR27V1652D 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V1652D is a 16Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small

Contextual Info: E2G0144-18-11 ¡ Semiconductor MD51V65160 ¡ Semiconductor This version:MD51V65160 Mar. 1998 4,194,304-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MD51V65160 is a 4,194,304-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS

Contextual Info: Standard Products UT8R256_16 256K x 16 SRAM Advanced Data Sheet August 21, 2001 Rev G FEATURES q 10ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state

IS42VM81600E

Abstract: IS42VM16800E IS42VM32400E-75TL IS42VM16800E-75BLI
Contextual Info: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES JUNE 2011 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

Contextual Info: I S 6 1 C 1 2 8 1 issr 6 128K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 fiW (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply

MSM5116160

Abstract: dq8e N4409
Contextual Info: O K I Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low -pow er

Contextual Info: O K I Semiconductor MSM5 1 V1 7 1 6 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCR IPTIO N The MSM51V17160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17160 achieves high integration, high-speed operation, and low-power

DIP42-P-600-2

Abstract: MR27V1602D
Contextual Info: O K I Semiconductor MR27V1602D_ Preliminary 1A 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM_ DESCRIPTION The MR27V1602D is a 16Mbit electrically Program mable Read-Only Memory whose configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8bit. The MR27

DPSD8MX32TY5

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD8MX32TY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the space saving LP-Stack™ TSOP

Contextual Info: H I T A C H I / LOGIC/ARRAYS/HEM SIE ]> • 44Tb2ü3 0D1774M 42^ ■ H I T 2 HN62438N Series- Preliminary 8M 512K x 16-bit and (1M x 8-bit) Mask ROM ■ DESCRIPTION The Hitachi HN62438N Series is an 8-Megabit CMOS Mask Programmable Read Only Memory organized either as 524,288 x

48-PIN

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16340, 23C16380 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C16340 and µPD23C16380 are 16,777,216 bits mask-programmable ROM. The word organization is

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

SPEAKERPHONE

Abstract: D6351A-11 D6305B D6351A KM29N040
Contextual Info: D6351A Flash TAD Chip for an all Digital Telephone Answering Device with True FULL Duplex SpeakerPhone General Description The D6351A chip is a digital speech/signal processing subsystem that implements all functions of TRUESPEECH speech compression and voice prompts, telephone line signal processing, flash memory management, and True FULL

Contextual Info: ISSI’ IS 4 1 C 1 6 2 5 6 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION eISSI FEATURES • DECEMBER 1998 Th IS41C16256 is a262,14 4 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16256 offers an accelerated cycle access called EDO Page Mode.

48-PIN

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32300 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) Description The µPD23C32300 is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode :