48-PIN TSOP (I) FLASH MEMORY Search Results

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE0.2E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM MBM29LV160TM/BM 90 n DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(I) and 48-ball FBGA. The device is designed to

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

S25FL129

Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
Contextual Info: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,

KS32P6632

Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
Contextual Info: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor

S25FL256

Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
Contextual Info: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:

80 pin simm flash 32mb

Contextual Info: ADVANCE 2MB-32MB FLASH SIMM |V|IC=RON 80-PIN FLASH SIMM FLASH MODULE • JEDEC- and industry-standard pinout in an 80-pin single in-line memory module SIMM • 2MB (512K x 32), 4MB (1 Meg x 32), 8MB (2 Meg x 32), 16MB (4 Meg x 32), 32MB (8 Meg x 32) • Address access times:

28f800b5

Abstract: 28F002BC 28F008 28F200B5 28F800 AB-60 ab-65 28f400
Contextual Info: E AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview December 1996 Order Number: 292154-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

Contextual Info: A D V A N C E IN F O R M A T IO N Am29F016 Advanced Micro Devices 16-Megabit 2,097.152 X 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, w rite, and erase ■ — Minimizes system level power requirements

63-Ball

Abstract: fbe063-63-ball ei 306 20 64
Contextual Info: ADVANCE INFORMATION Am29LV640M 64 Megabit 4 M x 16-Bit or 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation

amd 15h power

Abstract: AM29LV640
Contextual Info: Implementing a Common Layout for AMD MirrorBitTM and Intel StrataFlashTM Memory Devices Application Note Overview This document describes the benefits of designing with AMD MirrorBit Flash memory and the ease with which system designers can layout a board to accommodate high-density flash devices from both AMD and

Contextual Info: ADVANCE MT28F161 1 MEG x 16, 2 MEG x 8 FLASH MEMORY 1 MEG x 16, 2 MEG x 8 5V/5V SECTORED ERASE FEATURES PIN ASSIGNMENT Top View • Thirty-two 64KB/(32K-word) erase blocks • Programmable sector lock • Deep Power-Down Mode: 5|lA MAX • 5V ±10% V cc and Vpp

Contextual Info: ADVANCE INFORMATION AMD Am29LV200B 2 Megabit 256 K X 8-Bit/128 K X 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and w rite operations for battery-powered applications

Contextual Info: ADVANCE INFORMATION AM D Am29F160D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 5.0 Volt-only, Boot or Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt single power supply operation ■ — Minimizes system-level power requirem ents ■ High perform ance

Contextual Info: ADVANCE INFORM ATION AMD£1 Am29F160D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 5.0 Volt-only, Boot or Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt single power supply operation ■ — Minimizes system-level power requirem ents ■

AM29BL161

Abstract: l162c
Contextual Info: ADVANCE INFORMATION AMD£I Am29BL16xC 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only High Performance Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Choice of three architectures ■ — Am 29BL160C: 4 w ords sequential with wrap around (linear 4), bottom boot

Contextual Info: ADVANCE MT28F800S2/MT28F008S2 V 512K x 16,1 MEG x 8 FLASH MEMORY FLASH MEMORY 8 MEG SVT-II , LOW POWER, SECTORED ERASE S m a r tV o lta g e FEATURES • • • • Sixteen 64KB/(32K-word) erase blocks Programmable sector protect Deep Power-Down Mode: 10(iA MAX

ce 2752

Abstract: ST23L3210 44-TSOPII 44TSOP X6760
Contextual Info: ST Sitronix ST23L3210 32-Mbit 4M x 8 / 2M x16 Mask ROM FEATURES „ „ „ „ GENERAL DESCRIPTION The ST23L3210 is a wide range operation, 32M-bit, Read Only Memory. It is organized as 4M x 8 bits (byte mode) or Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode)

MX29F400BTC-55

Abstract: MX29F400BMC-55 2223H MX29F400BTC-70
Contextual Info: MX29F400T/B 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY FEATURES • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption

TRUEFFS

Abstract: footprint-48-pin Disk on chip 16MB Diskonchip diskonchip g4 TSOP 44 nand Flash
Contextual Info: ADVANCE INFORMATION Am72LVB016 16 MB Disk-on-Chip Flash Memory and Disk Controller DISTINCTIVE CHARACTERISTICS • General — Flash Disk—full hard disk emulation — 16Mbyte 128Mbit capacity — Single-chip, based on state-of-the-art NAND flash technology

29F800T

Abstract: MX29F800BTC-90 22D6H
Contextual Info: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption

Contextual Info: A D V A N C E {N f O R ÎvlA TIO N AMD il Am29LV400B 4 Megabit 512 K x 8-BIV256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

29F800A

Contextual Info: Order this document by M29F800A2/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A2 Advance Information 8M CMOS Flash Memory The M29F800A2 is a 3.0 V high speed 8,388,608-bit CMOS Boot Block Flash Memory suitable for use in systems such as mobile, personal computing, and

Contextual Info: FLASH MEMORY CMOS 8 M 1 M x 8 BIT MBM29F080-12-X • FEATURES • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standards Pinout and software compatible with single-power supply Flash

A23L1616

Abstract: A23L16161 A23L16162
Contextual Info: A23L1616/A23L16161/A23L16162 Series Preliminary 2M X 16 / 4M X 8 BIT CMOS MASK ROM Document Title 2M X 16 / 4M X 8 BIT CMOS MASK ROM Revision History History Issue Date Remark 0.0 Initial issue June 26, 2001 Preliminary 0.1 Change Access Time: September 13, 2002