48 65NG Search Results

65NG

Abstract: 58 65NG 48 65NG
Contextual Info: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol

49 65NG

Abstract: 65NG
Contextual Info: NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol

58 65NG mosfet

Abstract: 65NG 369D NTD5865NT4G
Contextual Info: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol

58 65NG

Contextual Info: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol

Contextual Info: NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features • • • • • Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(on) MAX

65NG

Abstract: 48 65NG 369D
Contextual Info: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices

65NG

Abstract: 369D NTD4865NT4G
Contextual Info: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

Contextual Info: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

65NG

Abstract: 48 65NG
Contextual Info: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices

V68A

Contextual Info: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility

49 65NG

Abstract: 4965ng 65NG 4965n NTD4965N-35G NTD4965NT4G mosfet 126 NTD4965N 369D-01 369D
Contextual Info: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility

65NG

Abstract: 49 65NG 4965ng NTD4965NT4G
Contextual Info: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility

1210301

Abstract: bbc scr 78
Contextual Info: /h o m e /u s 0 1 6 9 2 6 /D M T E C m o d DRAWI NG MADE I N T H I R D ANGDE P R O J E C T I O N RARO NNNBER 5 I R55 U55D R5V M AC H IN E 466502 -1 N 834400-1 466502 - 2 6 583435-3 466502 - 3 — 466502 - 4 ii 466502 - 5 6 5-466502 -5 G 555 T5RMINAM N A M 5 :

Contextual Info: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility