4772 DIODE Search Results

IN4774A

Abstract: IN4768A IN4773A zener diodes 1N serie IN4773 IN4774 1N4773A 1N4772 1N4770 1N4771
Contextual Info: ShE D 7^ ^ 2 3 7 • DD41S4S Ô5T B I S G T H SCS-THOMSON T -tt-13 BSOeia»[ieTOia>Me§ 1N 4765,A-> 1N 4774,A fZ Z ^7# S G S-THOMSON TEMPERATURE COMPENSATED ZENER DIODES NEW SERIE ■ SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING

1N4770

Contextual Info: SGS-THOMSON [*[M&egïï[FMD gS 1N 4765, A-> 1N 4774,A TEMPERATURE COMPENSATED ZENER DIODES N E W S E R IE • SEMICONDUCTOR M ATERIAL : SILICON ■ TECHNO LO G Y : LOCAL EPITAXY + GUARD RING / " DO 35 (Glass A B S O LU TE R A T IN G S (limiting values) Symbol

B4781

Abstract: C4739 din 4766
Contextual Info: C4700 Series EURO CASSETES 1 2 0 0 - 2 5 0 0 W AT T A C / D C - D C / D C - B AT T E R Y C H A R G E R S S I N G L E O U T P U T FEATURES • • • • • • • • DC input 10 - 800 V AC input 1 or 3-phase, 47 - 400 Hz or with PFC, 47 - 65 Hz DC output 5-400V

zener diode 9,1v 0.5 w

Abstract: 1N4772 IN4768 1n4770a 1N4771 1N4771A 9.1 zener diode 1N4770 IN4770 1N4773A
Contextual Info: lîîK ^ K 'I Mìcrosemi Corp. 1N 4765 thru 1 N 4774A 9.1 VOLT TEMPERATURE COMPENSATED ZENER REFEREN CE DIODES • ZENER VOLTAGE 9.1V . TEMPERATURE COEFFICIENT RANGE: 0.01 % / ° C to 0 .0 0 0 5 % / °C M A X IM U M FIA T IN G S Ï-M - O perating T em perature: —65°C to + 1 7 5 °C

Contextual Info: 1N4765 thru 1N4774A M icm em i Corp. h Tbß 'äröde egpaftS': i / SA NTA ANA, CA SCOTTSDALE. A 1 For more information call: 602 941-6300 9-1 VOLT FEATURES . COMPENSATED ZEN EH VOLTAGE 9.1 V ± 5% ZENER REFERENCE DIODES • T EM P ER A TU R E CO EFFICIEN T RANGE: 0 .0 1 % /°C TO 0 .0 0 0 5 % / ° C

N4770A

Abstract: N4774 zener diode 1n 4767a zener diode JEDEC 1N
Contextual Info: 1N4765 9.1 VOLT NOMINAL ZENER VOLTAGE + 5% •TEMPERATURE COMPENSATED ZENER REFERENCE DIODES thru 1N4774A LOW CURRENT RANGE: 0.5 AND 1.0 mA • METALLURGICALLY BONDED -1 DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS O » ra tin g Tem perature: -65' C to + 175:,C

mosfet 1200V 40A

Abstract: MOSFET 40A 600V ir igbt 1200V 40A DIODE 2800 igbt 1200V 40A short circuit igbt 40A 600V 4772 mosfet driver Diode 1200V 40A IGBT 600V 40A IGBT 600V 40A diode
Contextual Info: PROVISIONAL PD - 94240 IRGPS40B120UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA

ir igbt 1200V 40A

Abstract: igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package
Contextual Info: PD - 94295 PROVISIONAL IRGPS40B120U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE on Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Super-247 Package

Contextual Info: TELEFUNKEN ELECTRONIC filC D • fi^SOa^b OOOBfibS R U 2416 B inHUlIPWl&tllXI electronic Crtttivt IfcchnotoQiw - 7 = - T 7 - O ? Monolithic Integrated Circuit Applications: AM/FM-IF-Amplifier for mains and battery operated radios

RFP70N06

Abstract: TA49007 RFG70N06 fp70n06 70n06 4772 DIODE TC1501
Contextual Info: ill H R F G 70N 06 F P 7 0 N O fi a r r is S E M I C O N D U C T O R ^ N-Channel Enhancement-Mode Power Field-Effect Transistors August 1992 Features • Packages TO-22QAB TOP VIEW 70A,60V • r DS on = 0.014£2 • UIS Rating Curve (Single Pulse) DRAIN (FLANGE)

TLV2362

Abstract: TLV2362ID TLV2362IDR TLV2362IP TLV2362IPWLE TLV2362Y t994
Contextual Info: TLV2362, TLV2362Y HIGH-PERFORMANCE, LOW-VOLTAGE DUAL OPERATIONAL AMPLIFIERS SLO S126A- APRIL 1993 - REVISED AUGUST 1994 D, P, OR PW PACKAGE TOP VIEW Low Supply Voltage Operation V qq s + 1 V Min Wide Output Voltage Swing +2.4 V Typ at VCc± = ±2.5 V, RL = 10 k£2

Diode BFM

Abstract: TR-NWT-000870 EML10WCA EML11 dfb activation energy nrz optical modulator
Contextual Info: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the

5252 F

Abstract: transistor 1547 b Hytrel* 4056 Bookham Technology 5252 F led k 1535 transistor 1548 b 5252 S GB 4056 D bookham tunable LASER
Contextual Info: Data sheet 2.5 Gb/s Buried Het 4x100GHz Tunable Laser with extended reach option This laser module employs the Bookham Technology gain coupled SLMQW buried heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division Multiplexed WDM 2.5 Gb/s long distance optical

dfb activation energy

Abstract: 10Gb CDR 5252 S diode 5817 specifications TR-NWT-000870 AN0140 EML10WCB EML11 GR-468 Diode BFM
Contextual Info: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCB The Bookham EML10WCB Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the

TR-NWT-000870

Abstract: 10Gb CDR DFB laser drivers k 1535 5252 S diode 5817 specifications direct pm modulation circuit stm 64 laser diode 1550 nm EML10WCA EML11
Contextual Info: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the

in4740

Abstract: IN4770 1N4717 1N4728 1N4729 1N4730 1N4731 1N4732 1N4733 CHARACTERISTICS DIODE 1n4732
Contextual Info: ' SO'O 01 2 0 0 .0 I Zener Voltage Tolerance No Suffix = 1 0 % Suffix A — 5 % No Suffix = 1 0 % Suffix A - 5 % C Max. Zener Impedance @ In Ohms 0 6 001 001 7 6 .0 69.0 5 8 .0 5 3 .0 4 9 .0 6 4 .0 4 5 .0 4 1 .0 3 7 .0 1 0 .0 1 4 .0 1 6 .0 4 5 .0 5 0 .0 6 0 .0

Contextual Info: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCB The Bookham EML10WCB Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the

5252 F 4-pin

Abstract: k 1535 5252 S bookham tunable LASER diode 5817 specifications direct pm modulation circuit LC25T bookham dr1670 wdm laser wavelength drift tunable laser diode
Contextual Info: Data Sheet 2.5 Gb/s Buried Het 4x100GHz Tunable Laser with extended reach option LC25T This laser module employs the Bookham gain coupled SLMQW buried heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division Multiplexed

7N20E

Abstract: P7N20E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T P 7N 20E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Ga te TMOS POWER FET 7.0 AMPERES 200 VOLTS RDS on = 0.70 OHMS

ion chamber

Abstract: SM110 pn2222a fairchild circuit for piezoelectric sensor fire alarm using zener ion metal detector smoke detector schematic schematic 4772 mosfet driver ion chamber smoke
Contextual Info: designed for . . • a SMI 10 micropower smoke detector circuit BENEFITS • Smoke Detector Systems High Impedance Sensor Trip Point Detector • Streamlines U L Approval of Smoke Detector System o U L C om ponent Recognized o A llo w s Systems to Meet 1 Year Life

cambasic

Abstract: BEST BIOS PROGRAMMING AND DATA FOR EEPROM octagon Octagon Systems 386SX manual LED 6030 nec floppy circuit 16C550 386SX IEC1000
Contextual Info: PC MICROCONTROLLERS TABLE OF CONTENTS INTRODUCTION TO THE 6000 SERIES .3–2 60X0 COMMON FEATURES .3–3 60X0 I/O COMPARISON CHART .3–3

NXP 4772

Contextual Info: 6 OP 1 SS IP4770/71/72CZ16 VGA/video interface with integrated buffers, ESD protection and integrated termination resistors Rev. 2 — 19 May 2011 Product data sheet 1. General description The IP4770CZ16, IP4771CZ16, IP4772CZ16 is connected between the VGA/DVI

AN9405

Abstract: HCA10008 HIP4081A MS-013-AC
Contextual Info: HCA10008 Data Sheet 80V/2.5A Peak, High Frequency Full Bridge FET Driver The HCA10008 is a high frequency, medium voltage Full Bridge N-Channel FET driver IC, available in 20 lead plastic SOIC package. The HCA10008 can drive every possible switch combination except those which would cause a shoot

NXP 4772

Abstract: IP4770 IP4770CZ16 IP4771CZ16 IP4772CZ16 SSOP16 dvi to vga circuit
Contextual Info: SS OP 16 IP4770/71/72CZ16 VGA/video interface with integrated buffers, ESD protection and integrated termination resistors Rev. 2 — 19 May 2011 Product data sheet 1. General description The IP4770CZ16, IP4771CZ16, IP4772CZ16 is connected between the VGA/DVI