474 3.5V Search Results
474 3.5V Datasheets Context Search
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VC 5022
Abstract: P6SMB18A P6SMB6V8A P6SMB33A ltj LXJ Series P6SMB100 P6SMB100A P6SMB100CA P6SMB220 P6SMB220A
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smb/do-214aavc 5022p6smb18ap6smb6v8a+7 | |
VC 5022
Abstract: P6KE Series 474 3.5v diode p6ke 12 a P6KE120A P6KE12A P6KE13A P6KE150A P6KE15A P6KE400
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mil-std-19500do-15mil-std-202vc 5022+9 | |
2161TContextual Info: QSFCT161T, 2161T, 163T, 2163T Q High-Speed CMOS Synchronous Presettable 4-Bit Binary Counters QS54/74FCT161T QS54/74FCT163T Q S54/74FCT2161T QS54/74FCT2163T FEATURES/BENEFITS TTL-compatible input and output levels Ground bounce controlled outputs Reduced output swing of 0-3.5V |
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qsfct161t2161t2163tqs54/74fct161t+6 | |
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Contextual Info: QSFCT161T, 2161T, 163T, 2163T Q High-Speed CMOS Synchronous Presettable 4-Bit Binary Counters Q S54/74FCT161T QS54/74FCT1 63T Q S54/74FCT2161T QS54/74FCT2163T FEATURES/BENEFITS TTL-compatible input and output levels Ground bounce controlled outputs Reduced output swing of 0-3.5V |
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qsfct161t2161t2163ts54/74fct161t+6 | |
land pattern for tvSOPContextual Info: 20-BIT BUS EXCHANGE SWITCH IDT74FST163383 IDT74FST1632383 ADVANCE INFORMATION no noise of their own w hile providing a low resistance path for an external driver. These devices connect input and output ports through an n-channel FET. W hen the gate-to-source |
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20-bitidt74fst163383idt74fst1632383fst163xxx+7 | |
philips tin foil
Abstract: ECG1600 c6090
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ecg1600ecg1500philips tin foilc6090 | |
KA3525AContextual Info: SAMSUNG ELECTRONICS INC b7E » KA3525A • DD17MGH bTl « S U G K LINEAR INTEGRATED CIRCUIT VOLTAGE-MODE PWM CONTROLLER 16 OIP The KA3525A is a monolithic integrated circuit that included all of the control circuit necessary for a pulse width modulating regulator. |
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ka3525add17mghb414e | |
XP152A12C0MRContextual Info: XP152A12C0MR ◆ ◆ ◆ ◆ ◆ ◆ Power MOS FET P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.3Ω max Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package • General Description ■ ● ● ● ● Applications |
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xp152a12c0mr250/w | |
36K53D1-RS1030
Abstract: thermistor 14k Betatherm 30K5 36K53D1 36K53A1-RS103 36K53A1 thermistor 36k Precision Thermistors Probes BetaTHERM Sensors RTD 0 DEGREES AT 100 OHMS
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36k53a136k53d1-rs1030thermistor 14kbetatherm 30k5+6 | |
1N400Contextual Info: PT8A2515 | |
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pt8a2515pt0272-31n400 | |
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Contextual Info: PT8A2516 | | |
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pt8a251620mins16hrsot23-5+1 | |
1n400
Abstract: ic timer relay PT8A2516 2n390 ic 7808 pin out PT8A2516NE 7808 diagram of ic 7808 TO94 package ET 7808
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pt8a251620mins16hrso94-4+10 | |
1N4007 RELAY IC
Abstract: TO94 package 1N4007 operating frequency 7808 diagram PT8A2516 ic timer relay of ic 7808 1N4007 PT8A2516NE
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pt8a251620mins16hrspt0273+8 | |
C1332Contextual Info: PT8A2516 | | |
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pt8a251620mins16hrso94-4l+3 | |
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PT8A2516NEContextual Info: PT8A2516 | | |
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pt8a251620mins16hrsot23-5+2 | |
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Contextual Info: PT8A2516 | | |
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pt8a251620mins16hrsot23-5+1 | |
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Contextual Info: MOSAI C S E M I C O N D U C T O R INC 53E ]> • b 3 S 3 3 7 T 0 G D 1 2 4 5 7b£ B I M O C 256 K x 8 SRAM moXaic MS8256RKX A-55/70 Issue 1.0 : June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition |
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ms8256rkx | |
7SEGMENT 5"
Abstract: TC5002BP TC5022BP
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tc5002bptc5022bp7segment 5 | |
TC5022
Abstract: TC5002 TC5022BP 7 SEGMENT DISPLAY COMMON CATHODE TC-5022
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tc50026pjc5022bptc5002bptc5022bptc5002bpjc5022bp+4 | |
MLWS-815
Abstract: mlwf-200 MLWS-805 MLWD-812F Lambda Hybrid MLWS-705 LAMBDA mil 600 mil std 1275 power supply 952F MLWS-705F
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28vdcmil-std-704dsinglt-100015vdc+14 | |
AOD4110Contextual Info: AOD4110 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load |
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aod4110o-2521e-04figure15 | |
24v 5a smps
Abstract: AO4716
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ao471600a/us24v 5a smps | |
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Contextual Info: AOL1708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use |
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aol1708figure15 | |
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Contextual Info: Analog Power AM2337P P-Channel 30-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -30 PRODUCT SUMMARY rDS(on) (mΩ) 112 @ VGS = -4.5V 172 @ VGS = -2.5V ID(A) -2.8 -2.3 Typical Applications: |
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am2337p | |