465A MARKINGS Search Results

TFS465A

Contextual Info: TFS465A.doc version 1.1 VI TELEFILTER 25.07.03 Filter specification TFS 465A 1/5 Measurement condition Ambient temperature: 23 °C Input power level: 0 dBm Terminating impedances: input: 50 Ω output: 50 Ω Characteristics Remark: The maximum of the pass band attenuation amax is defined as the insertion loss ae. The nominal frequency fN is fixed at 465,0 MHz without

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

MRF18085A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 5, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085ALR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and

MRF18085ALS

Abstract: MRF18085A
Contextual Info: Freescale Semiconductor Technical Data MRF18085A Rev. 4, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and

"RF power MOSFETs"

Abstract: marking Z4 MRF9130LR3 MRF9130L MRF9130LSR3 chip resistor 1206
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

Z1 Transistor

Abstract: smd transistor marking j2 smd transistor marking z3 465A MARKINGS MRF18060A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

transistor marking PB C8

Abstract: NI-780S SMD transistor 2x sot 23
Contextual Info: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF18085A

Abstract: F 5M 365 R AN1955 GSM1800 MRF18085ALR3 MRF18085ALSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085ALR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and

MRF18085A

Contextual Info: Freescale Semiconductor Technical Data MRF18085A Rev. 4, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and

MRF18085A

Contextual Info: Document Number: MRF18085A Rev. 8, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/

Contextual Info: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF18085A

Abstract: AN1955 EB212 MRF18085ALSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/

Contextual Info: Document Number: MRF18060B Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF18060BLR3 MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

motorola regulator

Abstract: 103 potentiometer MRF18060A
Contextual Info: Freescale Semiconductor Technical Data MRF18060A Rev. 7, 1/2005 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18060B Rev. 7, 3/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF18060BLR3 MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from

Contextual Info: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

BC847

Abstract: GSM1900 LP2951 MRF18060 MRF18060B MRF18060BLR3 MRF18060BLSR3 SMD Transistor z6 RF Power Transistor MRF18060B MRF18060 465A MARKINGS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18060B Rev. 8, 5/2006 RF Power Field Effect Transistor MRF18060BLR3 MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MARKING WB1

Abstract: EB212 MRF9085 MRF9085LSR3 MRF9085LS
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9085LSR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

MRF18060A

Abstract: transistor 6 pin SMD Z2 BC847 GSM1800 LP2951 MRF18060 MRF18060ALR3 MRF18060ALSR3 smd z5 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from

Contextual Info: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

Contextual Info: Freescale Semiconductor Technical Data MRF21060 Rev. 7, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060R3 MRF21060SR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and

FERRITE BEAD 1000 OHM 0805

Abstract: AN1955 BC847 LP2951 MRF18085B MRF18085BLR3 MRF18085BLSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18085B Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085BLR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and

AN1955

Abstract: BC847 LP2951 MRF18085B MRF18085BLR3 MRF18085BLSR3 J476 transistor marking z9
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18085B Rev. 6, 5/2006 RF Power Field Effect Transistors MRF18085BLR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and

CDR33BX104AKWS

Abstract: MRF21060 MRF21060LR3 MRF21060LSR3
Contextual Info: Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and