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MC-4516DC72F-A10

Abstract: MC-4516DC72F-A12
Text: -4516DC72-A10, 4516DC72-A12 ] Parameter ICC1 Test condition Burst length = 1, tRC tRC(MIN.) , IO = 0 mA /CAS , tCL MC-4516DC72 Synchronous Characteristics [ MC-4516DC72-A10, 4516DC72-A12 ] Parameter , -4516DC72-A10, 4516DC72-A12 ] Parameter Symbol -A10 MIN. - A12 MAX. MIN. Unit MAX. REF to REF/ACT , Frequency and Latency [ MC-4516DC72-A10, 4516DC72-A12 ] Speed version -A 10 -A 12 Clock cycle , -4516DC72 Serial PD [ MC-4516DC72-A10, 4516DC72-A12 ] Byte No. Function Described (1/2) Hex Bit 7


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PDF MC-4516DC72 72-BIT MC-4516DC72 PD4564841 MC-4516DC72F-A10 MC-4516DC72F-A12
Not Available

Abstract: No abstract text available
Text: 12 ns 5.130 W CL = 2 MC-4516DC72- A12 Burst cycle time (MAX.) MC-4516DC72-A10 Clock , Clock frequency Package Mounted devices MHz (MAX.) MC-4516DC72F-A10 100 MHz MC-4516DC72F- A12 , : A0 - A11, Column : A0 - A8] BAO (A13), BA1 ( A12 ) SDRAM Bank Select DQ0 - DQ71 Data Inputs , ,155 Test condition MIN. = 2 lo= 0 mA Precharge standby current in Unit - A12 Symbol MAX. - A12 Parameter |CC2P CKE < V i l( m a x ), |CC2PS CKE = 3


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PDF MC-4516DC72 72-BIT MC-4516DC72 uPD4564841 M200S-50A9
Not Available

Abstract: No abstract text available
Text: A8] BA0(A13), BA1 ( A12 ) : SDRAM Bank Select DQO - DQ71 : Data Inputs/Outputs CLKO : Clock , - A12 Symbol MAX. - A12 Param eter CKE > V il (m a x .) j ih (m in .), tc K = , Input signals are stable. - A12 /C A S latency = 2 lo = 0 m A (Burst mode) /C A S latency , 1,155 -A10 1,470 1,380 -A10 1,470 1,380 -A10 1,515 - A12 tc K > tc K (M IN .) 1,245 - A12 |CC4 -A10 - A12 O perating current 1,425 Self refresh current


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PDF MC-4516DC72 16M-WORD 72-BIT MC-4516DC72 uPD4564841 200S-50A1
1998 - Not Available

Abstract: No abstract text available
Text: access time Family /CAS Latency Clock frequency (MAX.) MC-4516DC72-A10 CL = 3 CL = 2 MC-4516DC72- A12 CL , Memory Module 18 pieces of 64M SDRAM : µPD4564841G5 (Socket Type) MC-4516DC72F- A12 83 MHz Edge connector , BA0(A13) NC VCC DQM /WE VSS NC CLK0 VCC /CS1 /CS0 VSS BA1( A12 ) A10 VCC A2 A3 VSSQ DQ 31 DQ 30 VCCQ DQ , , Column : A0 - A8] BA0 (A13), BA1 ( A12 ) : SDRAM Bank Select DQ0 - DQ71 CLK0 CKE0, CKE1 /CS0, /CS1 /RAS , , tRC tRC(MIN.) , IO = 0 mA /CAS latency = 3 /CAS latency = 2 -A10 - A12 -A10 - A12 Precharge standby


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PDF MC-4516DC72 72-BIT MC-4516DC72 PD4564841 MC-4516DC72-A10 MC-4516DC72-A12
Not Available

Abstract: No abstract text available
Text: (Recommended Operating Conditions unless otherwise noted) MC-4516DC72-A10, 4516DC72-A12 ] Parameter Ic c i , il (m ax .). NEC MC-4516DC72 Synchronous Characteristics MC-4516DC72-A10, 4516DC72-A12 , Characteristics MC-4516DC72-A10, 4516DC72-A12 ] Parameter Symbol -A 10 MIN. REF to REF/ACT command , Latency MC-4516DC72-A10, 4516DC72-A12 ] Speed version -A 10 -A 12 Clock cycle time [ns] 10 , PD MC-4516DC72-A10, 4516DC72-A12 ] Byte No. 0 Function Described (1/2) Hex Defines the


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PDF MC-4516DC72 72-BIT MC-4516DC72 uPD4564841 M200S-50A9
Not Available

Abstract: No abstract text available
Text: Characteristics (Recommended Operating Conditions unless otherwise noted) [ MC-4516DC72-A10, 4516DC72-A12 ] Param , measured at 1 .4 V. 8 NEC Synchronous Characteristics [ MC-4516DC72-A10, 4516DC72-A12 ] Param eter , NEC Asynchronous Characteristics [ MC-4516DC72-A10, 4516DC72-A12 ] Param eter Symbol MIN. REF to REF , EF 11 NEC Relationship between Frequency and Latency [ MC-4516DC72-A10, 4516DC72-A12 , -4516DC72-A10, 4516DC72-A12 ] Byte No. 0 1 2 3 4 5 6 7 8 9 Function Described Defines the number of bytes written into


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PDF MC-4516DC72 72-BIT MC-4516DC72 uPD4564841 MC-4516DC72-A10 MC-4516DC72-A12 MC-4516DC72-A10B
1997 - Not Available

Abstract: No abstract text available
Text: Family /CAS Latency Clock frequency (MAX.) MC-4516DC72-A10 CL = 3 CL = 2 MC-4516DC72- A12 CL = 3 CL = 2 , Memory Module (Socket Type) MC-4516DC72F- A12 83 MHz Edge connector : Gold plated Mounted devices 18 , A7 VSS BA0(A13) NC VCC DQM /WE VSS NC CLK0 VCC /CS1 /CS0 VSS BA1( A12 ) A10 VCC A2 A3 VSSQ DQ 31 DQ 30 , 96 97 98 99 100 A0 - A11 BA0(A13), BA1( A12 ) CLK0 : Address Inputs [Row : A0 - A11, Column , condition /CAS latency = 2 MIN. -A10 - A12 -A10 - A12 MAX. 1,155 1,110 1,200 1,155 54 36 360 Unit mA


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PDF MC-4516DC72 72-BIT MC-4516DC72 PD4564841 MC-4516DC72-A10 MC-4516DC72-A12
04564841G5

Abstract: NEC RF MODULE
Text: -4516DC72F-A10 MH2 (MAX.) 1 00M H Z Package 200-pin Dual In-line Memory Module (Socket Type) M C -46 16DC72F- A12 , condition /CAS latency s 2 -A IO - A12 lo = 0 m A /CAS latency = 3 *A10 - A12 Precharge standby current in , signals are stable. Operating current (Burst mode) ICC4 tCK à tCK(MM ! /CAS latency * 2 -A10 - A12 , /CAS latency = 3 -A IO - A12 Refresh current fees t*C à tRCittffO /CAS latency » 2 -A10 - A12 mA 4 /CAS latency = 3 -A10 A12 Self refresh current Input leakage current


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PDF MC-4516DC75 16M-WORD 72-BIT MC-4516DC72 uPD4564841 MC-4516DC72* MC-4516DC72-M2 04564841G5 NEC RF MODULE
Not Available

Abstract: No abstract text available
Text: 12 ns 7.560 W CL = 2 MC-4516DC72- A12 Burst cycle time (MAX.) MC-4516DC72-A10 Clock , In-line Memory Module 18 pieces of 64M SDRAM : /¿PD4564441G5 (400 mil TSOP (II) (Socket Type) MC-4516DA72F- A12 , [Row : A0 - A11, Column : A0 - A9] BA0(A13), BA1 ( A12 ) : SDRAM Bank Select DQ0 - DQ71 : Data , Unit Notes -A10 1,470 mA 1 - A12 Burst length = 1, tRc>tRc A12 Operating current Symbol MIN. 1,470 mA 2 mA 2 mA 2


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PDF MC-4516DA72 72-BIT MC-4516DA72 uPD4564441 M200S-50A7
1998 - Not Available

Abstract: No abstract text available
Text: access time Family /CAS Latency Clock frequency (MAX.) MC-4516DC72-A10 CL = 3 CL = 2 MC-4516DC72- A12 CL , Memory Module 18 pieces of 64M SDRAM : µPD4564441G5 (Socket Type) MC-4516DA72F- A12 83 MHz Edge connector , VSS DQ 37 DQ 36 VCC A6 A7 VSS BA0(A13) NC VCC DQM /WE VSS NC CLK0 VCC NC /CS0 VSS BA1( A12 ) A10 VCC A2 , 88 89 90 91 92 93 94 95 96 97 98 99 100 A0 - A11 BA0(A13), BA1( A12 ) CLK0 CKE0 /CS0 /RAS /CAS /WE , condition Burst length = 1, tRC tRC(MIN.), IO = 0 mA /CAS latency = 3 /CAS latency = 2 -A10 - A12 -A10 - A12


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PDF MC-4516DA72 72-BIT MC-4516DA72 PD4564441 MC-4516DC72-A10 MC-4516DC72-A12
1998 - upd23c8000

Abstract: upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
Text: µPD4516421A-L A80 A10 A12 A80 A10 A12 1M × 8 × 2 µPD4516821A µPD4516821A-L BL: Burst length MENU , µPD4516421A µPD4516421A-L A80 A10 A10B A12 A80 A10 A10B A12 A80 A10 A10B A12 1M × 8 × 2 µPD4516821A , ) (400 mil) Package µPD4504161 A10 A12 BL: Burst length · 2M Synchronous DRAM Cycle , ) Package µPD4502161 A10 A12 BL: Burst length MENU · 64M Virtual Channel Synchronous DRAM , µPD431532L A8 A9 A10 A12 µPD431632L 32K × 36 A6 A7 A8 A9 A10 A12 µPD431536L µPD431636L 2M


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PDF -PC100 compliant64M compliant16M 168-pin 16-bit, upd23c8000 upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
1997 - SO DIMM 72-pin

Abstract: "simm 72 pin" uPD27C8000 2620 dynamic ram simm 72 pin DIMM 72-pin SIMM 72 MC-422000F32 8k refresh simm 72 edo dram 72-pin SO DIMM
Text: No file text available


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PDF 8K/64* 4K/64 50-pin 32-pin PD4264405 PD4265405 SO DIMM 72-pin "simm 72 pin" uPD27C8000 2620 dynamic ram simm 72 pin DIMM 72-pin SIMM 72 MC-422000F32 8k refresh simm 72 edo dram 72-pin SO DIMM
2011 - Not Available

Abstract: No abstract text available
Text: Standard Ratings or –12 % Not to exceed +20% (P, J case) Refer to Standard Ratings or +15% Lower , Resistance to at Endurance Soldering Heat ±20% ±20% ±20% ±12 % ±12 % ±20% ±20% ±12 % ±12 % ±12 % ±20% ±15% ±12 % ±20% ±15% ±12 % ±15% ±12 % ±12 % ±15% ±12 % ±12 % ±20% ±12 % ±12 % ±20% ±20% ±20% ±20% ±20% ±20% ±12 % ±12 % ±20% ±12 % ±12 % ±20% ±12 % ±12 % ±15% ±12 % ±15% ±20% ±20% ±15% ±12 % ±12 % ±12 % ±12 % ±12 % ±12 % ±12 % ±12 % ±12


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PDF 9653TCAVOL14E1109E0
2004 - Not Available

Abstract: No abstract text available
Text: % Within P20% change A12 , A16, B12, B19, C25, G32, D28 size Within P10% Within P15% 4V DF (tanE) P12size [12% [10% 6.3 to 16V [10% [8% C=1MF A12 , A16, B12, [8% [6% C=1.5 to 10MF B19, C25, G32 , 40C 90 to 95RH for 500 hours. Capacitance Within P20% P12size change Within P10% A12 , A16, B12 , specified value A12 , A16, B12, B19, C25, G32, D28 size (JIS C 5101-1 4.22.) Leakage current [The Initial , minutes 30 seconds. Capacitance Within P12% P12size change 4 to 6.3V Within P12% A12 , A16, B12


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PDF 35Vdc 680MF CE106MATER 16MCE106MBTER 16MCE156MBTER 16MCE226MBTER 16MCE226MCTER 16MCE336MCTER 16MCE476MCTER 16MCE476MDTER
2004 - 16MCE476MCTER

Abstract: 10MCE106MATER 16MCE475MATER 16MCE106MATER 16MCE106 16MCE106MB 2R5 B19 SMCE4R0R106
Text: Capacitance P12size Within P15% Within P20% change A12 , A16, B12, B19, C25, G32, D28 size Within P10% Within P15% 4V DF (tanE) P12size [12% [10% 6.3 to 16V [10% [8% C=1MF A12 , A16, B12, [8% [6% C=1.5 to 10MF B19 , for 500 hours. Capacitance Within P20% P12size change Within P10% A12 , A16, B12, B19, C25, G32, D28 size DF (tanE) [150% of the Initial specified value P12size [The Initial specified value A12 , A16, B12 , . Capacitance Within P12% P12size change 4 to 6.3V Within P12% A12 , A16, B12, Within P8% B19, C25, G32, 10 to


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PDF 35Vdc 680MF 120Hz, 16MCE155MATER 16MCE225MATER 16MCE475MATER 16MCE685MATER 16MCE106MATER 16MCE106MBTER 16MCE156MBTER 16MCE476MCTER 10MCE106MATER 16MCE106 16MCE106MB 2R5 B19 SMCE4R0R106
2002 - Not Available

Abstract: No abstract text available
Text: 15 5 5 5 12 15 5 5 5 12 15 5 5 5 12 15 ±12 ±12 ±12 ±15 ±15 ±15 ±12 ±12 ±12 ±15 ±15 ±15 ±12 ±12 ±12 ±15 ±15 ±15 600 1000 2000 400 300 600 1000 , (Range) (Vdc) 24 36 48 TRIPLE 5 12 24 Output Current (mA) ±12 ±12 ±12 ±15 ±15 ±15 ±12 ±12 ±12 ±15 ±15 ±12 ±12 ±12 ±15 ±15 ±12 ±15 5/ ±12 5/±15 5/ ±12 5/±15 5/ ±12 5/±15 15 Output Voltage (Vdc) ±150 ±250 ±350 ±150 Â


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PDF
2013 - hexashield to star shield cross reference guide

Abstract: a13c HEX40AB45-13A3-3
Text: -90-15-A5-1 HEX40-AC-90-17-A6-1 HEX40-AC-90-19-A7-1 HEX40-AC-90-21-A9-1 HEX40-AC-90-23-A10-1 HEX40-AC-90-25- A12 , -90-25-A13-1 HEX40-AC-90-23- A12 -1 HEX40-AC-90-25-A14-1 HEX40-AC-90-23-A13-1 HEX40-AC-90-25-A15-1 HEX40-AC , -90-17-A6-1-DS HEX40-AC-90-19-A7-1-DS HEX40-AC-90-21-A9-1-DS HEX40-AC-90-23-A10-1-DS HEX40-AC-90-25- A12 -1-DS HEX40-AC , -45-19-A7-1 HEX40-AC-45-21-A9-1 HEX40-AC-45-23-A10-1 HEX40-AC-45-25- A12 -1 HEX40-AC-45-17-A7-1 HEX40-AC-45-19-A8-1 HEX40-AC-45-21-A11-1 HEX40-AC-45-23-A11-1 HEX40-AC-45-25-A13-1 HEX40-AC-45-23- A12 -1 HEX40-AC


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PDF HEXA6-AB-00-02-A18-1 HEXA6-AB-00-02-A25-1 HEXA6-AB-00-02-A27-1 HEXA6-AB-00-02-A29-1 HEXA6-AB-00-02-A7-1 HEXA6-AB-00-02-A9-1 HEXA6-AB-00-02-A11-1 HEXA6-AB-00-02-A16-1 HEXA6-AB-00-02-A18AB-1 HEXA6-AB-00-02-A18AC-1 hexashield to star shield cross reference guide a13c HEX40AB45-13A3-3
2013 - TAD100

Abstract: mdd100
Text: ±10%) 5, 12, 15 ±5, ±12 , ±15 3.3, 5, 12, 15, 24 ±5, ±12 , ±15 3.3, 5, 12, 15, 24 ±5, ±12 , ±15 3.3, 5, 9, 12, 15 ±5, ±12 , ±15 3.3, 5, 9, 12, 15 ±5, ±12 , ±15 3.3, 5, 9, 12, 15 ±5, ±12 , ±15 3.3, 5, 9, 12, 15 ±5, ±12 , ±15 3.3, 5, 9, 12, 15, 24 ±5, ±12 , ±15 1000 VDC 3000 , ~75) 9~18, 18~36, 36~75 (9~36, 18~75) 9~18, 18~36, 36~75 (9~36, 18~75) 3.3, 5, 12, 15 ±5, ±12 , ±15 3.3, 5, 12, 15 ±5, ±12 , ±15 Vo1&Vo2: 5/12/15 3.3, 5, 12, 15, 24 ±5, ±12 , ±15 3.3, 5


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PDF MIL-STD-105E 370VDC) 264VAC TAD100 mdd100
2009 - Not Available

Abstract: No abstract text available
Text: 5.0 5.0 T 2.8 2.8 W 5.5 5.5 H d P F 11.5 0.5 +1.0 3.5±1.0 –1.2 5.0 12.0 0.5 3.5±1.0 –1.2 +1.0 5.0 0.5 +1.0 3.5±1.0 –1.2 5.0 0.5 +1.0 3.5±1.0 –1.2 5.0 5.0 12.0 12.0 0.0047 472 3.0 6.0 8.5 0.5 3.5 ± 0.75 5.0 3.0 6.0 12.0 0.5 +1.0 3.5±1.0 –1.2 0.0068 682 3.5 6.0 , 5.0 4.5 8.5 14.0 0.5 5.0± 1.0 5.0 0.5 +1.0 7.5±1.0 –1.2 7.5 7.5


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PDF 2002/95/EC) 100VDC 8100B
1995 - NS32GX320

Abstract: 74F74 1mx1 DRAM 16R4 AN-719 C1995 LA10 P16R4 256K 4bit DRAM dram 8 bit
Text: lines A10 A11 and A12 (The row address is given by A10 to A19 ) A system with 16-bit bus will need hardware implementing the page signal to A11 and A12 (The row address is A11 to A20 ) A system with 32-bit bus will need extra hardware because the row address is given by A12 A21 then page signal must be implemented to the signal A12 only A13 to A31 are given by the NS32GX320 page mechanism 2 0 INTRODUCTION , being the row address A12 A23 Thus only the line A12 must be included in the extra page mechanism


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PDF NS32GX320 16-bit 32-bit 20-3A NS32GX320 74F74 1mx1 DRAM 16R4 AN-719 C1995 LA10 P16R4 256K 4bit DRAM dram 8 bit
2015 - Not Available

Abstract: No abstract text available
Text: 3.5±1.0 –1.2 5.0 5.0 0.0015 152 2.5 5.0 8.5 0.5 3.5 ± 0.75 5.0 2.8 5.5 12.0 0.5 +1.0 3.5±1.0 –1.2 0.0022 222 3.0 5.5 8.5 0.5 3.5 ± 0.75 5.0 2.8 5.5 12.0 0.5 +1.0 3.5±1.0 –1.2 , 12.0 0.5 +1.0 3.5±1.0 –1.2 5.0 0.0047 472 3.0 6.0 8.5 0.5 3.5 ± 0.75 5.0 3.0 6.0 12.0 0.5 +1.0 3.5±1.0 –1.2 5.0 0.0068


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PDF 2011/65/EUï 100VDC 1000C
Not Available

Abstract: No abstract text available
Text: 5.0 5.0 T 2.8 2.8 W 5.5 5.5 H d P F 11.5 0.5 +1.0 3.5±1.0 –1.2 5.0 12.0 0.5 3.5±1.0 –1.2 +1.0 5.0 0.5 +1.0 3.5±1.0 –1.2 5.0 0.5 +1.0 3.5±1.0 –1.2 5.0 5.0 12.0 12.0 0.0047 472 3.0 6.0 8.5 0.5 3.5 ± 0.75 5.0 3.0 6.0 12.0 0.5 +1.0 3.5±1.0 –1.2 0.0068 682 3.5 6.0 , 5.0 4.5 8.5 14.0 0.5 5.0± 1.0 5.0 0.5 +1.0 7.5±1.0 –1.2 7.5 7.5


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PDF 2011/65/EU) 100VDC 8100C
BD2-40TYG-A12

Abstract: BD2-501UR-A11 BD256 BD2-40TYG-C12 BD2-561UR BD252 401CB C1364 BD2-561UR-A15 BD2-561YG-A11
Text: 80 30 150 2.2 2.5 2.4 BD2-301SR- A12 AlGaAs/GaAs DH Red Chip 660/643 20 80 30 150 1.7 2.5 4 BD2-301HO- A12 BD2-301HO-C12 GaAsP/Gap Orange Chi p 640/628 45 80 30 150 2 2.5 2 BD2-301HY- A12 BD2-301HY-C12 GaAsP/Gap Yellow Chi p , -301HO-C11 0.3 inch Dual-Digit 2.4 BD2-301UR- A12 BD2-301SR-C11 Peak Wave Length (nm) P(nm , Chip BD2-301YG- A12 BD2-301YG-C12 Gap/Gap Yellow Green Chip D D -01 BD2-30XXX-CX1 Date Code


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PDF BD2-301SR-A11 BD2-301HY-A11 BD2-301HY-C11 BD2-801HY-A11 BD2-801HY-C11 BD2-801UR-A11 BD2-801SR-C11 BD2-801UR-C11 BD2-801YG-A11 BD2-801YG-C11 BD2-40TYG-A12 BD2-501UR-A11 BD256 BD2-40TYG-C12 BD2-561UR BD252 401CB C1364 BD2-561UR-A15 BD2-561YG-A11
Not Available

Abstract: No abstract text available
Text: Absolute encoders - parallel End or hollow shaft ø12 mm Optical singleturn encoders 12 bit , : 12 bit – Small proile depth – High interference immunity – End or hollow shaft ø12 mm , interference DIN EN 61000-6-3 Approval UL approval / E217823 ø12 mm hollow shaft Operating , BFF Shaft Operating torque typ. 0.009 Nm (IP 42) 0.037 Nm (IP 65) Materials 1 ø12 mm , excepted. BFG Absolute encoders - parallel End or hollow shaft ø12 mm Optical singleturn encoders


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PDF 58h10
j4310

Abstract: 3355X
Text: A12 23 87 TYAV0J476A12ML 6.3 100 107 6.3 x 13 B13 23 121 , 23 3097 TYAV0J229H43ML The TYAV series offers a wide 10 33 336 5 x 12 A12 20 78 TYAV1A336A12ML capacitance range at voltages from 10 47 476 5 x 12 A12 , TYAV1A109G36ML 16 22 226 5 x 12 A12 17 71 TYAV1C226A12ML 16 33 336 5 x 12 A12 17 85 TYAV1C336A12ML Tyco Electronics axial 6.3 to 450Vd.c. Suitable for


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PDF TYAV0J476A12ML TYAV0J107B13ML TYAV0J227B13ML TYAV0J337C16ML TYAV0J477C16ML TYAV0J108D17ML j4310 3355X
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