4512 DIODE Search Results

SHD114436

Abstract: SHD114436A SHD114436B
Contextual Info: SENSITRON SEMICONDUCTOR SHD114436 SHD114436A SHD114436B TECHNICAL DATA DATA SHEET 4512, REV. A POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:

200v 3A schottky

Abstract: SHD114436 SHD114436A SHD114436B
Contextual Info: SENSITRON SEMICONDUCTOR SHD114436 SHD114436A SHD114436B TECHNICAL DATA DATA SHEET 4512, REV. - POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:

Contextual Info: SENSITRON SEMICONDUCTOR SHD114436 SHD114436A SHD114436B TECHNICAL DATA DATA SHEET 4512, REV. B POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra Low Reverse Leakage Current

VMIVME-4512

Abstract: Panduit 120-964-455 4512 VMIVME cpu vmivme45 VMIVME
Contextual Info: VMIVME-4512 16-Channels 12-Bit Analog I/O Board Product Manual 256 880-0444 w 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA (800) 322-3616 w Fax: (256) 882-0859 500-004512-000 Rev. U (256) 880-0444 w 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA

M34512M2-XXXFP

Abstract: 4512 Group M34512M2 M34512M4 W32 MARKING M34512M4-XXXFP PU01 TDA 88 diode T 4512 H
Contextual Info: MITSUBISHI MICROCOMPUTERS RY A N IMI L E PR 4512 Group . ion cat cifi ct to e p je ls fina re sub a ot a is n limits s i Th etric m ice: Not e para m o S nge. cha SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION ●Timers Timer 1 . 8-bit timer with a reload register

diode avalanche DSA

Abstract: D0203AB DIODE DSA 18 diode 35-12 diode avalanche DSA 35-18 A DSAI35 diode T 3512 2x55-12A DSI 2*55-16A DSAI35-18
Contextual Info: Rectifier Diodes lFAV = 48 - 160 A, Standard Diodes DS. , Avalanche Diodes (DSA.) v RRM Type P p p V A kW A A 10 ms V m °C K/W K/W Package style b 2 Outline drawings d) ii_ on page 91-100 35-08 A 35-12 A 800 1200 49 - 80 650 0.85 4.5 180 1.05 0.2 18 DSA 35-12 A

PS-4512 diode

Abstract: T 4512 H diode ps 4512 diode diode T 4512 H
Contextual Info: A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-Module D | DD4Ö3DÖ □□ □ □ m T | ~ D T ~ 2, Ç - o Fast switching thyristor modules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

T 3512 H diode

Abstract: ASEA fast thyristor ASEA thyristor diode T 3512 H ABB thyristor modules E 72873 ASEA abb diode ABB thyristor 5 TO 48 THYRISTOR FAST SWITCHING ABB Thyristor asea
Contextual Info: A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-M odule D | DD4Ö3DÖ □□ □ □ m T | ~ D T ~ 2, Ç - o Fast switching thyristor m odules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Contextual Info: MWI 45-12 T6K Advanced Technical Information IC25 = 43 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 10, 23 14 18 22 13 17 21 6 4 2 5 9, 24 3 1 8 11, 12 15, 16 19, 20 NTC 7 E72873 Features IGBTs Symbol

v4331

Abstract: NTC 4,7 NTC M4 igbt sixpack 4512 diode
Contextual Info: MWI 45-12 T6K Advanced Technical Information IC25 = 43 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 10, 23 14 18 22 13 17 21 6 4 2 5 9, 24 3 1 8 11, 12 15, 16 19, 20 NTC 7 Features Symbol Conditions Maximum Ratings

FMB-29

Contextual Info: SANKEN ELECTRIC CO., LTD. FMB-29 1. Scope The present specifications shall apply to an FMB-29. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040512 1／5

diode avalanche DSA

Abstract: diode avalanche DSA 42 diode avalanche DSA 25 8 diodes DSA 6 A 1712 25-16AT 2X17 10-32-UNF-2A
Contextual Info: Rectifier Diodes lFAV = 2 - 45 A, Standard Diodes DS. , Avalanche Diodes (DSA.) Type ^RR M *FAV V 100°C A 2.3 p ^FRMS 1-12 D 1200 DSA 1-12 D DSA 1-16 D DSA 1-18 D DS 1200 1600 1800 DS DS 2-08 A 2-12 A 800 1200 DSA 2-12 A DSA 2-16 A DSA 2-18 A 1200 1600

Contextual Info: Bulletin 12122 rev. A 07/97 International IS R Rectifier SAFE/R Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A * 'fsm = 950A VR RM800 to 1600V RRM Description/Features The 60EPS. rectifier SAFE/Rsexies has been optimized for very low forward voltage drop, with moderate leakage.

T 4512 H diode

Abstract: diode T 4512 H diode rectifier p 600
Contextual Info: Bulletin 12122 rev. A 07/97 International TOR Rectifier SA FElR Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A 'f s m = 950A VRRM800 to 1600V Description/Features The 60EPS. rectifierSA FE //?series has been optimized for very low forward voltage drop, with moderate leakage.

60EPS08

Abstract: 60EPS12 60EPS16
Contextual Info: 2002-02-20 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-239-48 60EPS08 diodTO-247 70-239-55 60EPS12 diodTO-247 Bulletin I2122 rev. A 07/97 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE

Thyristor ABB ys 150

Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

60EPS08

Abstract: 60EPS12 60EPS16
Contextual Info: Bulletin I2122 rev. A 07/97 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A IFSM = 950A VRRM 800 to 1600V Description/Features The 60EPS. rectifierSAFEIRseries has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature.

T 4512 H diode

Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

60EPS12

Abstract: P035H I2176
Contextual Info: Bulletin I2176 rev A 07/06 SAFEIR Series 60EPS.PbF INPUT RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1V @ 30A IFSM = 950A VRRM = 800 to 1200V Description/ Features The 60EPS.PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate

Contextual Info: AO4714 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

I2122

Abstract: 035H 60EPS08 60EPS12 60EPS16 "RECTIFIER DIODE"
Contextual Info: Bulletin I2122 rev. C 10/05 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1.1V @ 60A IFSM = 950A VRRM = 800 to 1600V Description/ Features Major Ratings and Characteristics Characteristics Values Units 60 A VRRM 800 to 1600 V Typical applications are in input rectification and these

p035h

Abstract: 60EPS16
Contextual Info: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate

AO4714

Contextual Info: AO4714 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

SMPS 30v 20a

Contextual Info: AO4714 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,