4500V 900A Search Results

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF . 900A ● VRRM . 4500V

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900HC-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900HC-90S ● IF . 900A ● VRRM . 4500V

a3101

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900HC-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900HC-90S ● IF . 900A ● VRRM . 4500V

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF . 900A ● VRRM . 4500V

CM900HB-90H

Contextual Info: MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HB-90H ● IC . 900A ● VCES . 4500V

SGRB000GXH26

Abstract: 4500V 900A GTO thyristor 4500V 4000A
Contextual Info: SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA GATE TURN-OFF THYRISTOR SGRB000GXH26 REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V (Note 1) R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C)

160nF

Abstract: 4500a u4200 DIM900ESM45-F000
Contextual Info: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.3 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25831) 4500V 2.9 V 900A 1800A *(measured at the power busbars and not the auxiliary terminals)

Contextual Info: TO SHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION 2-03.5 + 0.2 Repetitive Peak Off-State Voltage V d RM = 4500V Note 1 l T ( R M S ) = 1200A(Tf=77°C) R.M.S On-State Current l R ( R M S ) = 900A(Tf=77°C)

Contextual Info: T O S H IB A SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 INVERTER APPLICATION • Unit in mm Repetitive Peak Off-State Voltage Vd r m = 4500V Note 1 R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C) R.M.S Reverse Current

sgr3000gxh28

Abstract: 4500V 900A
Contextual Info: TO SHIBA SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 Unit in mm INVERTER APPLICATION • Repetitive Peak Off-State Voltage : VDRM“ 4500V Note 1 • R.M.S On-State Current : lT(RMS) = 1200A(Tf=77°C) • R.M.S Reverse Current ; I r (RMS) —900A (Tf=77°C)

RM900DB-90S

Abstract: CC-124 4500V 1800A
Contextual Info: 三菱半導体〈HIGH VOLTAGE DIODE モジュール〉 RM900DB-90S 大電力スイッチング用 絶縁形 High Voltage Diode モジュール RM900DB-90S ¡IF ……………………………………………… 900A ¡VRRM ……………………………………… 4500V

Contextual Info: 三菱半導体〈HIGH VOLTAGE DIODE モジュール〉 RM900HC-90S 大電力スイッチング用 絶縁形 High Voltage Diode モジュール RM900HC-90S ¡IF ……………………………………………… 900A ¡VRRM ……………………………………… 4500V

DFM450NXM45

Abstract: DS5892-1 DS5892 DFM450NXM45-F000 ln2482
Contextual Info: DFM450NXM45-F000 Fast Recovery Diode Module DS5892-1.0 October 2006 LN24820 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 900A Rating

CM400DY-66H

Abstract: 4500v CM900HB-90H diode 900A CM1200HA-34H 2500V. 300A. diodes CM12 cm400du CM800HA-34H cm800hb
Contextual Info: Px IGBTs Recommended for new designs 1700V - 6500V 7/3/2003 NF-Series, F-Series, KA-Series Circuit 50A 75A Chopper, Six PAC Dual Buck, Boost 100A 150A 200A 300A 400A 600A CM400HA-34H Dual Dual Single 900A 1200A Ic A CM1200HA-34H Recommended CM100DU-34KA CM150DU-34KA CM200DU-34KA CM300DU-34KA CM400DU-34KA CM600DY-34H

DFM900NXM45-F000

Contextual Info: DFM900NXM45-F000 Fast Recovery Diode Module Replaces DS5887-1.0 DS5887-2 April 2011 LN28310 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

DFM450NXM45-F000

Contextual Info: DFM450NXM45-F000 Fast Recovery Diode Module Replaces DS5892-1.0 DS5892-2 April 2011 LN28308 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

Contextual Info: DFM900NXM45-F000 Fast Recovery Diode Module Replaces DS5887-1.0 DS5887-2 April 2011 LN28310 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

4500a

Abstract: C6250 DFM900NXM45-F000 4500V 900A
Contextual Info: DFM900NXM45-F000 Fast Recovery Diode Module DS5887-1.0 June 2006 LN24652 KEY PARAMETERS FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1800A Rating

Contextual Info: TOSHIBA SGR3500GXH29 TOSHIBA GATE TURN-OFF THYRISTOR LOWER LOSS, REVERSE CONDUCTING TYPE TENTATIVE SGR3500GXH29 INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current R.M.S Reverse Current Peak Turn-Off Current

toshiba gto

Abstract: SGR3000GXH28 GTO thyristor 4500V 4000A GTO 100A 500V 4500V 900A 100a 1000v GTO GTO 10A 500V
Contextual Info: TOSHIBA SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 Unit in mm INVERTER APPLICATION • • • • • • • Repetitive Peak Off-State Voltage VDRM —4500V Note 1 R.M.S On-State Current lT ( R M S ) = 1200A(Tf=77°C)

160nF

Abstract: DIM900ESM45-F000
Contextual Info: Preliminary Data DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.0 October 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability

switch transistor

Contextual Info: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.1 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS

Contextual Info: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.2 November 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS

TOSHIBA IGBT

Abstract: 800 kw Toshiba AC motor MG900GXH1US53 4 kw Toshiba AC motor diode 900A
Contextual Info: TOSHIBA MG900GXH1US53 TOSHIBA IGBT TENTATIVE DATA MODULE MG900GXH1US53 SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features • High Input Impedance • Enhancement Mode • Electrodes are Isolated from Case EQUIVALENT CIRCUIT