4500V 900A Search Results

CM900HB-90H

Contextual Info: MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HB-90H ● IC . 900A ● VCES . 4500V

SGRB000GXH26

Abstract: 4500V 900A GTO thyristor 4500V 4000A
Contextual Info: SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA GATE TURN-OFF THYRISTOR SGRB000GXH26 REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V (Note 1) R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C)

Contextual Info: TO SHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION 2-03.5 + 0.2 Repetitive Peak Off-State Voltage V d RM = 4500V Note 1 l T ( R M S ) = 1200A(Tf=77°C) R.M.S On-State Current l R ( R M S ) = 900A(Tf=77°C)

Contextual Info: T O S H IB A SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 INVERTER APPLICATION • Unit in mm Repetitive Peak Off-State Voltage Vd r m = 4500V Note 1 R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C) R.M.S Reverse Current

DFM450NXM45

Abstract: DS5892-1 DS5892 DFM450NXM45-F000 ln2482
Contextual Info: DFM450NXM45-F000 Fast Recovery Diode Module DS5892-1.0 October 2006 LN24820 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 900A Rating

4500a

Abstract: C6250 DFM900NXM45-F000 4500V 900A
Contextual Info: DFM900NXM45-F000 Fast Recovery Diode Module DS5887-1.0 June 2006 LN24652 KEY PARAMETERS FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1800A Rating

Contextual Info: TOSHIBA SGR3500GXH29 TOSHIBA GATE TURN-OFF THYRISTOR LOWER LOSS, REVERSE CONDUCTING TYPE TENTATIVE SGR3500GXH29 INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current R.M.S Reverse Current Peak Turn-Off Current

160nF

Abstract: DIM900ESM45-F000
Contextual Info: Preliminary Data DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.0 October 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability

TOSHIBA IGBT

Abstract: 800 kw Toshiba AC motor MG900GXH1US53 4 kw Toshiba AC motor diode 900A
Contextual Info: TOSHIBA MG900GXH1US53 TOSHIBA IGBT TENTATIVE DATA MODULE MG900GXH1US53 SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features • High Input Impedance • Enhancement Mode • Electrodes are Isolated from Case EQUIVALENT CIRCUIT

Contextual Info: CM900HB-90H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD H-Series Module 900 Amperes/4500 Volts A D L L L S V NUTS (6 TYP) P C C C E E E G F Q C E R U NUTS (3 TYP) T B E CM K G J H W (8 TYP) M N N X

Contextual Info: WESTCODE An Date:- 30 Oct, 2008 Data Sheet Issue:- 1 IXYS Company Provisional Data Insulated Gate Bi-Polar Transistor Type T0900EB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.