44SOP FLASH Search Results

LH28F

Abstract: bt12 bl70
Contextual Info: FLASH MEMORY j _ ☆ New product • FLASH MEMORIES ★ Underdevelopment ♦ Features • Smart voltage technology provides the most flexible voltage solution (from 3.3 V single to 5 V single, and to the dual voltage-3.3 V/5 V, 3.3 V/12 V, 5 V/12 V for wider application from battery operated PDAs to industrial

48fbga

Abstract: BV12 48-FBGA 44SOP flash
Contextual Info: MEMORIES • Symmetrical Block Sm artVoltage Flash Memories Supply V o lta g e S m a rt V o lta g e Capacity Bit configuration S upply v o lta g e can be s e le cte d a u to m a tic a lly fro m fo llo w in g co m b in a tio n s ; Vcc = 3.0 to 3.6 V, Vpp = 3.0 to 3.6 V DVcc = 3.0 to 3.6 V, Vpp = 4.5 to 5.5 V @Vcc = 3.0 to 3.6 V, Vpp =

lh28f320bjd

Abstract: AF-9706 SDP-UNIV-48TS 1E07AA LH28F320BJD-TTL 1E08AB AF-9708 AF9708 AF-9845 ALL-11
Contextual Info: June/18/2002 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.

Contextual Info: MEMORIES ★ Under developm ent • Second-generation Boot Block Sm artVoltage Flash Memories Supply Voltage Sm art Voltage Capacity Bit ;onf!guratior Supply voltage can be selected autom atically from following combinations ; Vcc = 2.7 to 3.6 V, Vpp = 2.7 to 3.6 V Vcc = 2.7 to 3.6 V, Vpp = 4.5 to 5.5 V ®Vcc = 2.7 to 3.6 V, Vpp = 11.4 to 12.6V

MX29LV160D

Abstract: S29AL Spansion s29al016d 032D BOTTON 500MIL MX29LV320 MX29LV800C Spansion Flash S29AL004D
Contextual Info: APPLICATION NOTE Migrating to the Macronix MX29LV400C/800C/160D/320D Flash Families from Spansion S29AL004D/008D/016D/032D Devices. Contents Introduction. 2

48FBGA

Contextual Info: MEMORIES ★ U n d e r d e v e lo p m e n t Pege Mode Flash Memories Supply Voltage Smart 3 Capacity Bit amfiguratior 16 M X Supply voltage can be selected automatically from following combinations ; DVcc = 3.0 to 3.6 V, Vpp = 3.0 to 3.6 V Vcc = 3.0 to 3.6 V. Vpp = 4.5 to 5.5 V

lh5s4

Abstract: LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85
Contextual Info: MASK ROM ☆ New product ★ • M Capacity ASK F O M S Bit Pinout* configuration Model No. LH53V4T00E J J x8 4M x 16 x 8/ x 16 x8 8M x 8/ x 16 LH53V4ROOAN/AT LH53V4R00N/T J J J LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T J J F F LH534A00T

lh537

Abstract: 42DIP lh533200 LH535g
Contextual Info: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H

536G

Abstract: LH534600
Contextual Info: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)

Contextual Info: FLASH MEMORY 8M AND 16M DENSITIES • 8M AND 16M FLASH MEMORY WITH 120ns AND 150ns ACCESS TIMES • PLEASE CONTACT FLINT FOR DETAILS OF THE 16M PARTS 8M AND 16M FLASH MEMORY • • • • • New Product Access Voltage Icc Part Number Size Format ns V mA max

56TSOP

Abstract: LH28F020SUT LH28F032SUTD-10 LH28F016SAT
Contextual Info: MEMORIES • Flash Memories Capacity Configuration Erasable block size bytes (words x bits) Model No. Accees time (ns) MAX. Supply voltage (V) ★LH28F020SUT/N-N60 60 Vcc=5 ★LH28F020SUT/N-N80 80 Vpp=5 Read current (mA)MAX. Operating temperature (1C) Package

60-FBGA

Contextual Info: MEMORIES ★ U n d e r d e v e lo p m e n t • Second-generation Boot Block Sm art 5 Flash Memories Supply V o lta g e S m a rt 5 Capacity Bit Mfifiguration S upply v o lta g e ca n be s e le c te d a u to m a tic a lly from follow ing co m b ination ; V c c = 4 .5 to 5 .5 V, V p p = 4 .5 to 5 .5 V © V c c = 4 .5 to 5 .5 V. V p p = 1 1 .4 to 1 2 .6 V

MSP55lv512

Abstract: MSP55LV100S MSP55LV128 34A65 fujitsu msp55lv512 MSP55LV100G MSP55LV128M MSP55LV160 MSP55LV100 MSP55LV160A
Contextual Info: ＡＦ９８４５／４５Ｂ／４５Ｃ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９８４５ ＧＡＮＧ ＵＮＩＴ ＡＦ９８４５Ｂ ＧＡＮＧ ＵＮＩＴ ＡＦ９８４５Ｃ ＧＡＮＧ ＵＮＩＴ Ｆｌａｓｈ Ｓｕｐｐｏｒｔ Ｇｒｏｕｐ，Ｉｎｃ．

Contextual Info: MEMORIES ★ Under developm ent lal-Power-Supply Flash Mem ories Capacity 8M 16M Configuration Erase Mock size wordsxbits (bytes) 1M 2M 1M X 8 16 X Access time (ns) MAX. Supply voltage LH28F008SAT/R/N-85 85 Vcc = 5 V LH28F008SAT/R/N-12 120 Vpp = 12 V ★LH28F008SAT/R/B-KF85

lh28f320bjd

Abstract: HI-LO SYSTEMS all11 LH28F320BJD-TTL LRS13A8 minato Model 1890A AF-9706 lh28f128bfht-pw LH28F128BFHED AF9706 AF9723
Contextual Info: November/1/2003 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.

HD637B01VOP

Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Contextual Info: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ

MSP14LV160

Abstract: MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512
Contextual Info: ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９７０８ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９Ｂ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

msm5232

Abstract: d2b bus MSM5230 MSM6920 MSM7731-02 2016 RAM MSM66P589 MSM6411 18QFJ 3ch-10bit
Contextual Info: Semiconductor Shortform Catalogue June 1999 Taupo Bay, New Zealand Foreword Strong Partnerships http://www.arm.com/ http://www.rambus.com/ http://www.elan.fr/ http://www.dialogic.com/ http://www.symbionics.co.uk/ http://www.vividsemi.com/ Oki Semiconductor Websites

Contextual Info: preliminary HY23V64200 4MX16/8MX8 BIT CMOS MASK ROM Description The HY23V64200 high per formance read onl y m em or y i s or gani z ed ei th er a s 8,38 8,608 x 8bi t byte mode or as 4,194,304 x16 bit(word mode) and has an access time of 100/120ns. It needs no external

HY23C32200F

Abstract: HY23C32200M HY23C32200S HY23C32200T
Contextual Info: 2MX16/4MX8 BIT CMOS MASK ROM HY23C32200 Description The HY23C32200 high per form ance r ead only mem or y i s or gani z ed ei th er a s 4,19 4,304 x 8bi t byte mode or as 2,097,152 x16 bit(word mode) and has an access time of 70/100/120ns. It needs no external

HY23V32200

Abstract: 44SOP
Contextual Info: 2MX16/4MX8 BIT CMOS MASK ROM HY23V32200 Description The HY23V32200 high per formance read onl y m em or y i s or gani z ed ei th er a s 4,19 4,304 x 8bi t byte mode or as 2,097,152 x16 bit(word mode) and has an access time of 70/100/120ns. It needs no external

44SOP flash memory

Contextual Info: 4MX16/8MX8 BIT CMOS MASK ROM HY23V64200 Description The HY23V64200 high per formance read onl y m em or y i s or gani z ed ei th er a s 8,38 8,608 x 8bi t byte mode or as 4,194,304 x16 bit(word mode) and has an access time of 100/120ns. It needs no external

HY23C64200

Abstract: 4MX16 4Mx16 flash 48-TSOPI
Contextual Info: 4MX16/8MX8 BIT CMOS MASK ROM HY23C64200 Description The HY23C64200 high per form ance r ead only mem or y i s or gani z ed ei th er a s 8,38 8,608 x 8bi t byte mode or as 4,194,304 x16 bit(word mode) and has an access time of 100/120ns. It needs no external