44S MARKING CODE Search Results

44S DIODE

Abstract: Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720
Contextual Info: BAS 40W Silicon Schottky Diode ● ● ● ● General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code tape and reel Pin Configuration 1 2 3 BAS 40-04W BAS 40-05W BAS 40-06W Q62702-A1065

Contextual Info: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • C ircuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code Marking Package^ tape and reel

a2 marking

Abstract: Q62702-A1066 Marking Code to on semiconductor 720
Contextual Info: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code tape and reel 1 2 3 Q62702-A1065

d979

Abstract: transistor marking 47s D339 diode marking 515 DIODE BAS JS v Q62702-D978 D1314 d1314 marking 44S DIODE Q62702-D979
Contextual Info: Silicon Schottky Diodes ● ● ● ● ● BAS 40 … General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Available with CECC quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions!

DIODE 4004

Abstract: diode 4007 Q62702-D980 diode marking 515 44S DIODE Q62702-D339 Q62702-D978 Q62702-D979 MARKING 720 SOT23 4004 diode
Contextual Info: Silicon Schottky Diodes BAS 40 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precautions!

DIODE 4004

Abstract: Q62702-D980 D1314 d339 transistor marking 47s Q62702-D339 Q62702-D978 Q62702-D979 44S marking code 45s MARKING CODE
Contextual Info: Silicon Schottky Diodes BAS 40 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● ESD: Electrostatic discharge sensitive device, observe handling precautions!

Q62702-D979

Abstract: 44S marking code Q62702-D980 44S DIODE Q62702-D1314 44s SOT23-3 DIODE 4004 BAS 20 SOT23 46s sot23 marking 47s
Contextual Info: SIEMENS Silicon Schottky Diodes • • • • 6 BAS 40 . General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Available with CECC quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SIEMENS Silicon Schottky Diodes BAS 40. • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing € Available with C E C C quality assessm ent ESD : Electrostatic discharge sensitive device, observe handling precautions!

B5003

Abstract: 05B5
Contextual Info: BAS40.B5000 / B5003 Silicon Schottky Diode • General-purpose diode for high-speed switchhing • Circuit protected • Voltage clamping • High-level detecting and mixing • Improved operating temperature range due to extra-low thermal resistance see attached Forward current curves

Contextual Info: 3U Series ^ ^ ILLMoiN EilED Tiny Pushwheel Switches Easy Build-A-Switch: Below is a complete listing of available options for 3U S E R IE S T IN Y P U S H W H E E L S W IT C H E S . Build-A-Switch allows you to mix and match options to create the switch you n eed — simply select desired option from each category. All available options are

Contextual Info: SIEMENS CGY60 GaAs MMIC • • • • • • • Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems Biased monolithic microwave 1C (MMIC) Matched to 50£2 for 1.7 to 2GHz Easily matchable to 50Q for lower frequencies

45s MARKING CODE

Abstract: bas16 sot143
Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 ! BAS40-05 BAS40-05W !  ,   BAS40-06 BAS40-06W !

BAS140W

Abstract: BAS40 BAS40-02L BAS40-04 BAS40-05 BAS40-05W BAS40-06 BAS40-06W
Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS140W BAS40-02L

sot323 transistor marking 44s

Abstract: transistor marking 47s BAS40-04 BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-07 BAS140W BAS40
Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 3 1 3 2 1 BAS40-05 BAS40-05W 2 BAS40-06 BAS40-06W 3

Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free RoHS compliant package • Qualified according AEC Q1011) BAS140W BAS40-02L

Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free RoHS compliant package • Qualified according AEC Q1011) BAS140W BAS40-02L

hitachi ha 1125

Abstract: marking S76
Contextual Info: 2SC5631 Silicon NPN Epitaxial UHF / VHF wide band amplifier HITACHI Preliminary 1st. Edition Jul. 1999 Features • High gain bandwidth product fT = 11 GHztyp. • High power gain and low noise figure.; PG = 10 dB typ, , NF= 1.2dB typ. at f = 900 MHz Outline

M8102

Abstract: TPCM8102 tpcm810
Contextual Info: TPCM8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅤ TPCM8102 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Low drain-source ON-resistance: RDS (ON) = 6.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 44S (typ.)

Contextual Info: Data Sheet PT7M7803/7809-7812/7823-7825/7342-7345 µP Supervisor Circuits |

Contextual Info: SIEMENS Standard EEPROM ICs SLx 24C01/02 1/2 Kbit 128/256 x 8 bit Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus Data Sheet 1998-07-27 • BEBSbDS Q i n M E b 3bb SLx 24C01/02 Revision History: Current Version: 1998-07-27 Previous Version: 06.97 Page

TLE 6261

Abstract: tle 6261 g
Contextual Info: SIEMENS CAN-LDO TLE 6263 G Target Data Features • • • • • • • • • • • • • Standard fault tolerant differential CAN-transceiver Bus failure management Low power mode management CAN data transmission rate up to 125 kBaud Low-dropout voltage 5 V regulator for internal

MARKING SMD 43t

Abstract: RDG470 CDFP2-F14 DIMENSIONS 5962-89734022X qml-38535 54ACT04 54ACT11004 CDFP2-F14 GDFP1-F14 smd tr yc
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MODA APPROVED Delete Vendor CAGE 18714. Add vendor CAGE 27014. Editorial changes 91-08-28 M. A. Frye Add vendor CAGE 01295 for device type 01. Change boiler plate to add device

Contextual Info: NCP3800V SMBus Level 2 Battery Charger The NCP3800V is a highly integrated Lithium−ion battery charger controller which can be programmed via the SMBus. It can be used to charge smart batteries and includes three loops for output voltage, output current and input current. External switch FETs are driven by

Contextual Info: SSI 73K302L M M M Bell 212A, 103, 202 Single-Chip Modem lm A TDK G roup/C om pany Preliminary Data January 1994 DESCRIPTION FEATURES The SSI 73K302L is a highly integrated single-chip modem IC which provides the functions needed to construct a Bell 202, 212A and 103 compatible