44F3360 Search Results

Contextual Info: Freescale Semiconductor Technical Data MRF6S9130H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier

MRF9135LSR3

Contextual Info: Freescale Semiconductor Technical Data MRF9135L Rev. 6, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

XRF286

Abstract: XRF286S MRF286 MOTOROLA XRF286 47nj capacitor MRF286S MOTOROLA 934 100B910JP500X 95F769 CDR33BX104AKWS
Contextual Info: MOTOROLA Order this document from WISD RF Marketing SEMICONDUCTOR TECHNICAL DATA MRF286 MRF286S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Order sample parts by XRF286,S PILOT PRODUCTION PROTOTYPE