4430 MOSFET Search Results

BRIDGE RECTIFIER TOSHIBA 3B

Abstract: LT3748 LT4430ES6 mosfet 4430 Current-doubler 4430 transistor FG 5.5V 0.47F PA0785 LT4430 tapped inductor high voltage buck converter
Contextual Info: LT4430 Secondary-Side Opto-Coupler Driver FEATURES DESCRIPTION n The LT 4430 drives the opto-coupler that crosses the galvanic barrier in an isolated power supply. The IC contains a precision-trimmed reference, a high bandwidth error amplifier, an inverting gain of 6 stage to drive the optocoupler and unique overshoot control circuitry.

BRIDGE RECTIFIER TOSHIBA 3B

Abstract: Optocoupler 601 lt30 transistor sharp flyback schematic Ceramic Resistor 82K 5W 4430 4430 transistor flyback 200w LTC3723-2 Current-doubler rectifier
Contextual Info: LT4430 Secondary-Side Optocoupler Driver U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO 600mV Reference 1.25% Over Temperature Wide Input Supply Range: 3V to 20V Overshoot Control Function Prevents Output Overshoot on Startup and Short-Circuit Recovery

mosfet 4430

Abstract: schematic diagram 72v to 12v converter lt30 transistor flyback converter 12v to 18v linear opto coupler LT4430ES6 LTC3722-2 opto coupler 2kw full bridge converter design 4430 transistor
Contextual Info: LT4430 Secondary-Side Opto-Coupler Driver FEATURES n n n n n n n DESCRIPTION 600mV Reference 1.25% Over Temperature Wide Input Supply Range: 3V to 20V Overshoot Control Function Prevents Output Overshoot on Start-Up and Short-Circuit Recovery High Bandwidth Error Amplifier Permits Simple Loop

Contextual Info: LT4430 Secondary-Side Opto-Coupler Driver Features Description 600mV Reference 1.25% Over Temperature n Wide Input Supply Range: 3V to 20V n Overshoot Control Function Prevents Output Overshoot on Start-Up and Short-Circuit Recovery n High Bandwidth Error Amplifier Permits Simple Loop

mosfet 4430

Contextual Info: LT4430 Secondary-Side Opto-Coupler Driver FEATURES n n n n n n n DESCRIPTION 600mV Reference 1.25% Over Temperature Wide Input Supply Range: 3V to 20V Overshoot Control Function Prevents Output Overshoot on Start-Up and Short-Circuit Recovery High Bandwidth Error Amplifier Permits Simple Loop

4430 mosfet

Abstract: mosfet 4430 ANPEC A102 APM4430 4430 8 pin ao 4430
Contextual Info: APM4430 N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/23A , RDS ON =4.5mΩ(typ.) @ VGS=10V RDS(ON)=7mΩ(typ.) @ VGS=5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • 5 4 6 3 7 2 8 1 Reliable and Rugged SO-8 Package

4435 mosfet

Abstract: APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310
Contextual Info: www.anpec.com.tw ANPEC MOSFET Product Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • Anpec 技術發展 • Anpec MOSFET • 新產品開發方向 2 Anpec MOSFET技術發展 MOSFET技術發展

Si7625DN

Abstract: mosfet 4430 si7625 S10-2503
Contextual Info: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

GE2761

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/05/18 REVISED DATE : GE2761 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 600/650V 1.0 10A Description The GE2761 series provide the designer with best combination of fast switching, ruggedized device design, low

AP2761P-A

Contextual Info: AP2761P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 650V RDS ON 1Ω ID 10A S Description

Contextual Info: AP2761P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D Fast Switching Characteristic Simple Drive Requirement G RoHS Compliant 650V RDS ON 1 ID 10A S Description The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,AC-DC

mosfet 10a 600v

Abstract: P channel MOSFET 10A 330v ssm2761pa
Contextual Info: SSM2761P-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D Lower On-resistance Fast Switching Characteristic Simple Drive Requirement RoHS Compliant G BVDSS 650V RDS ON 1Ω ID 10A S DESCRIPTION The TO-220 package is universally preferred for all commercialindustrial applications.

Contextual Info: AP2761R-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D Fast Switching Characteristic Simple Drive Requirement G RoHS Compliant 650V RDS ON 1 ID 10A S Description AP2761 series are specially designed as main switching devices for

AP2761R-A

Abstract: AP2761
Contextual Info: AP2761R-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 650V RDS ON 1Ω ID 10A S Description

Contextual Info: AP2761S-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS D Fast Switching Characteristic Simple Drive Requirement G RoHS Compliant & Halogen-Free 650V RDS ON 1 ID 10A S Description

ap2761

Contextual Info: AP2761S-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G BVDSS 650V RDS ON 1Ω ID

Contextual Info: SPICE Device Model SiA483DJ www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7625DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: PD‘91880 International I R Rectifier IRFP460A smpsmosfet HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V d ss 500V R d s (o n ) m a x 0.27£2 Id 20A Benefits • Low Gate Charge Qg results in Simple

mosfet 4430

Abstract: FF121R 4431 mosfet
Contextual Info: 23 HARRIS IRFF12 0 /1 2 1/12 2/123 IRFF120R/121 R /122R/123R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features T O -2 0 5 A F • 5.0A and 6.0A , 8 0 V - 1 0 0V • rDS on = 0.30S1 and 0 .4 0 ii • Single Pulse Avalanche Energy R ated*

035H

Abstract: AN1001 IRFPE30 mosfet 20A 500V
Contextual Info: PD- 94853 IRFP460APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

mosfet 4430

Abstract: Diode 400V 20A 035H IRFPE30 igbt 400V 20A irfp460a 4430 mosfet
Contextual Info: IRFP460APbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current

035H

Abstract: AN1001 IRFPE30 MJ2400 Power MOSFET 50V 20A
Contextual Info: PD- 94853 IRFP460APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

irfp460a

Abstract: IRFP460APBF SiHFP460A
Contextual Info: IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage