4421 MOSFET Search Results
4421 MOSFET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
4421 MOSFET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: M iere / M IC 4421/4422 MIC4421/4422 9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features MIC4421 and MIC4422 MOSFET drivers are rugged, effi cient, and easy to use. The MIC4421 is an inverting driver, while the MIC4422 is a non-inverting driver. |
OCR Scan |
MIC4421/4422 MIC4421 MIC4422 000pF O-220 T0-220 | |
NTC 100-11
Abstract: NTC 10010 NTC 100-11 circuit diagram NR3015T1R0N LPS6225-222ML LPS4018-222ML NR4018T2R2
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MAX8834Y/MAX8834Z regulato34Y/MAX8834Z NTC 100-11 NTC 10010 NTC 100-11 circuit diagram NR3015T1R0N LPS6225-222ML LPS4018-222ML NR4018T2R2 | |
Contextual Info: 19-4421; Rev 2; 2/10 KIT ATION EVALU LE B A IL A AV Adaptive Step-Up Converters with 1.5A Flash Driver The MAX8834Y/MAX8834Z flash drivers integrate a 1.5A PWM DC-DC step-up converter and three programmable low-side, low-dropout LED current regulators. The step-up converter features an internal |
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MAX8834Y/MAX8834Z | |
NTC 100-11
Abstract: NTC 100-11 circuit diagram 2578-4 1117AS LPS4018-222ML max8834 809R
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MAX8834Y/MAX8834Z NTC 100-11 NTC 100-11 circuit diagram 2578-4 1117AS LPS4018-222ML max8834 809R | |
NTC 100-11 circuit diagram
Abstract: NTC 100-11 3.7v 1500mA battery LPS6225-222ML LPS4018-222ML 125000M
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MAX8834Y/MAX8834Z MAX8834Y/MAX8834Z NTC 100-11 circuit diagram NTC 100-11 3.7v 1500mA battery LPS6225-222ML LPS4018-222ML 125000M | |
NTC 100-11
Abstract: NTC 100-11 circuit diagram 2766v LPS4018-222ML led constant current driver 700mA LPS331 NR4010 spur LPS4018-102ML w202a22
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MAX8834Y/MAX8834Z NTC 100-11 NTC 100-11 circuit diagram 2766v LPS4018-222ML led constant current driver 700mA LPS331 NR4010 spur LPS4018-102ML w202a22 | |
MAR 544 MOSFET TRANSISTOR
Abstract: 4422
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MIC4421/4422 MIC4421 MIC4422 MIC4421/4422 MAR 544 MOSFET TRANSISTOR 4422 | |
Contextual Info: M IC 4 4 2 1 /4 4 2 2 9A High-Speed High-Current MOSFET Driver Bipolar/CMOS/DMOS Process Features General Description BiCM O S/DM O S Construction Latch-Up Proof: Fully Isolated Process is Inherently Immune to Any Latch-up. Input W ill W ithstand Negative Swing of Up to 5V |
OCR Scan |
000pF | |
Contextual Info: RFD16N05, RFD16N05SM S e m iconductor Data Sheet 16A, 50 V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, |
OCR Scan |
RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. 047i2 | |
FD-321Contextual Info: • 43D2271 005*4125 fili ■ OR HARRIS HAS IR FD 320/321/322/323 IRFD320R/321R /322R /323R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features • Package 4 - P IN D IP 0.5A and Q.4A, 350V - 400V T O P VIE W • rDS on = 1-8H and 2 .5 fl |
OCR Scan |
43D2271 IRFD320R/321R /322R /323R IRFD320, 1RFD332, IRFD322, IRFD323 IRFD320R, IRFD332R, FD-321 | |
TH 2267
Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
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RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. TH 2267 AN7254 AN9321 AN9322 RFD16N05SM9A TB334 | |
fd320Contextual Info: 2 HARRIS IRFD320/321/322/323 IRFD320R/321R/322R/323R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Features Package 4-P IN DIP • 0.5A and 0.4A, 350V - 400V TOP VIEW • rDS(on = 1-8n and 2 .5 fi • Single Pulse Avalanche Energy Rated* |
OCR Scan |
IRFD320/321/322/323 IRFD320R/321R/322R/323R IRFD320, IRFD332, IRFD322, IRFD323 IRFD320R, IRFD332R, IRFD322R, IRFD323R fd320 | |
WALMSLEY MICROSYSTEMS
Abstract: STA10 "matched transistor" STA10 transistor is4128 CMOS spice model "magnetic tape"
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OCR Scan |
STA10 STA10 WALMSLEY MICROSYSTEMS "matched transistor" STA10 transistor is4128 CMOS spice model "magnetic tape" | |
MIC4421BNContextual Info: MIC4421/4422 9A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features BiCMOS/DMOS Construction Latch-Up Proof: Fully Isolated Process is Inherently Immune to Any Latch-up. Input Will Withstand Negative Swing of Up to 5V Matched Rise and Fall T im e s.25ns |
OCR Scan |
MIC4421/4422 MIC4421 MIC4422 MIC4421/4422 IC4421/4422 MIC4421BN | |
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MOSFET 4418
Abstract: low voltage power transistor 33n 10e 33n10e mosfet 4419 4418 mosfet S 170 MOSFET TRANSISTOR
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OCR Scan |
0E-05 0E-04 0E-03 0E-02 0E-01 35Cms MOSFET 4418 low voltage power transistor 33n 10e 33n10e mosfet 4419 4418 mosfet S 170 MOSFET TRANSISTOR | |
half bridge MC34067
Abstract: EB205 MC34076 test circuit MBR20200 motorola 1n4747 dl128 half bridge resonant converter 77208 EB-205 MBR20200
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EB205/D EB205 EB205 EB205/D* half bridge MC34067 MC34076 test circuit MBR20200 motorola 1n4747 dl128 half bridge resonant converter 77208 EB-205 MBR20200 | |
APT9403
Abstract: 3000-4-CMD5005 mosfet power hf 1kw CMD5005 APT9302 RC07 768XT188 AP031HV Class B power amplifier, 13.56MHz 13.56Mhz class e power amplifier
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APT9403 APT9403 3000-4-CMD5005 mosfet power hf 1kw CMD5005 APT9302 RC07 768XT188 AP031HV Class B power amplifier, 13.56MHz 13.56Mhz class e power amplifier | |
Contextual Info: r r u n _ LTC1314/LTC1315 m TECHNOLOGY PCMCIA Switching Matrix with Built-In N-Channel Vcc Switch Drivers K fìT U R C S D € S C R IP T IO n • Output Current Capability: 120 m A ■ External 12 V Regulator Can Be Shut Down ■ Built-In N-Channel V cc Switch Drivers |
OCR Scan |
LTC1314/LTC1315 1314/LTC1315 LTC1315 | |
Contextual Info: HIP6015 HARRIS S E M I C O N D U C T O R PRELIMINARY Buck Pulse-Width Modulator PWM Controller and Output Voltage Monitor October 1997 Features Description • Drives N-Channel MOSFET The HIP6015 provides complete control and protection for a DC-DC converter optimized for high-performance micropro |
OCR Scan |
HIP6015 HIP6015 1-800-4-HARRIS | |
advantages and disadvantage max232
Abstract: uart PIC16F628 Triac tesla TC442X op amp c812 pickit 2 pic16F628 Q6X3 pic16f628 PWM LC resonant PIC16F62* comparator
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AN232 DS00232B-page advantages and disadvantage max232 uart PIC16F628 Triac tesla TC442X op amp c812 pickit 2 pic16F628 Q6X3 pic16f628 PWM LC resonant PIC16F62* comparator | |
uart PIC16F628
Abstract: pwm de PIC16F628 advantages and disadvantage max232 DS00232A TC442X pic microcontroller triac control AN232 pic16f628 PWM full bridge LC resonant 3 phase pwm pic16f628
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AN232 D-85737 DS00232A-page uart PIC16F628 pwm de PIC16F628 advantages and disadvantage max232 DS00232A TC442X pic microcontroller triac control AN232 pic16f628 PWM full bridge LC resonant 3 phase pwm pic16f628 | |
Contextual Info: unm LTC1149-3.3/LTC TM9-5 TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators F€flTUR€S DCSCRIPTIOn • Operation to 48V Input Voltage ■ Ultra High Efficiency: Up to 95% ■ Current-Mode Operation for Excellent Line and Load Transient Response |
OCR Scan |
LTC1149-3 16-Pin LTC1149 e-KI168M LR2512-01-R040-G LR2010-01-R050-G D01043Ã LTC1149 3/LTC1149-5 | |
cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
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AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 | |
FZH 191
Abstract: FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281
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OCR Scan |
Integrie8510. FZH 191 FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281 |