43T TRANSISTOR Search Results

B0239A

Contextual Info: BD239, BD239A, BD239B, BD239C SbE D • File Number -7^ 3 3 ^ 0 9 43DS271 GD40hSb 43T « H A S Epitaxial-Base Silicon N-P-N VERSAWATT Transistors 669 harris sehicon» sector For Power-Amplif ier and High-Speed-Switching Applications Features: ■ 30 W at 25°C case temperature

MATRA

Abstract: t4211 MCT12K MC10K
Contextual Info: 4TE — MATRA D H H S Preliminary • SflböMSb GÜ0E3Ü4 43T ■ H M H S =T 7= iiiiK iiii l i T H January 1991 ASIC HI-REL DATA SHEET MC GATE ARRAY SERIES 0.8 MICRON SCMOS FEATURES SUPER CMOS TECHNOLOGY -1 nm DRAWN 2 METAL LAYERS FLEXIBLE I/O CONFIGURATION : INPUT,

Contextual Info: MITSUBISHI RF POWER MODULE D 0 17 E 3cì 43T • _ _ M57782 824-851 MHz, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING B LO C K DIAGRAM Dimensions in mm © PIN : ©Pin : RF INPUT ©VCCI VCC 2 ®VCC3 ® P0 ©GND : 1st. DC SU PPLY : 2nd. DC SU PPLY : 3rd. DC S U PPLY

SFH6315T

Abstract: 43t transistor SFH6316T SFH6343 SFH6343T HCPL0453 HCPL0500 HCPL0501
Contextual Info: N EW SFH6315T SFH6316T SFH6343T FEATURES • Surface Mountable • Industry Standard SOIC-8 Footprint • Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes • Isolation Voltage, 2500 VRMS • Very High Common Mode Transient Immunity:

Contextual Info: Ordering num ber: EN3714 2SB1508/2SD2281 No.3714 PNP/NPN Epitaxial Planar Silicon Transistors 50V/12A Switching Applications Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage: VcE sat = —0.5V(PNP), 0.4V(NPN)max.

mpsa14

Abstract: 43t SOT23 43t transistor
Contextual Info: MPSA14 I MMBTA14 / PZTA14 D iscrete P O W E R & S ig n a l Technologies 6* National Semiconductor PZTA14 MMBTA14 MPSA14 SOT-23 B SOT-223 M ark: 1 N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from

Contextual Info: Ordering number:EN5958 NPN Triple Diffused Planar Silicon Transistor 2SC5453 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications ISA/iYOl Features Package Dimensions • High speed. - High breakdown voltage VCBO=1600V . • High reliability (Adoption o f HVP process).

PHOTO NPN

Contextual Info: NPN Photo Transistor TP S 618 4 5 A pplications • Photo Interrupter +0 -1.4 -0.2 2.4 ±0-3 • Photoelectric Counter • Position and Rotational Speed Sensor + 0 3-0.2 • Automatic Control Unit Features - (T 5 ) • Fast Response Speed 2 ± 0.2 • Spectrally and Mechanically Compatible with TLN107A

43t SOT23

Abstract: Philips MBB Silicon N-Channel Junction FET sot23 BSS131 DSS SOT23 p mos sot23
Contextual Info: • 711002b OObRSÔÔ STS ■ P HIN Philips Semiconductors Data sheet status P relim inary specification date of issue April 1991 N-channel enhancement mode vertical D-MOS FET Q U IC K REFERENCE DATA DESCRIPTION Silicon n-channel enhancem ent m ode vertical D-MO S transistor in a

Contextual Info: KD324515 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D u a l D a r liH Q t O H Transistor Module 150 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

E 94733

Contextual Info: SIEMENS BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: PD - 9.688A International io r i Rectifier IRGBC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency Curve

Contextual Info: BD934F; BD936F BD938F; BO940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S0T186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.

B0938

Abstract: B0942 B0941 BD933F BD934F BD935F BD936F BD937F BD938F BD939F
Contextual Info: BD934F; BD936F BD938F; BD940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistor in a SOT 186 envelope with an electrically insulated mounting base, intended for use in audio output stages and for general purpose amplifier applications.

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Symbol Unit Collector- Base Voltage V cB O 500 V Collector-Emitter Voltage V cE O 400 V Emitter- Base Voltage V ebo Collector Current DC

Contextual Info: SIEMENS BUZ 71 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b f f DS on Package Ordering Code BUZ 71 A 50 V 13 A 0.12 £2 TO-220 AB C67078-S1316-A3 Maxim um Ratings Parameter Symbol Continuous drain current

SFH6316T

Abstract: HCPL0453 HCPL0500 HCPL0501 SFH6315T SFH6343 SFH6343T
Contextual Info: SFH6315T/SFH6316T/SFH6343T High Speed Optocoupler FEATURES • Surface Mountable • Industry Standard SOIC-8 Footprint • Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes • Isolation Voltage, 3000 VRMS • Very High Common Mode Transient Immunity:

Contextual Info: • 4305271 0QS4513 720 ■ 3 3 H A R R HAS IS 2 6 8 9 7 P-Channel Enhancement-Mode Power MOS Field-Effect Transistors A u g u s t 1991 Features • N Package TO-204AA BOTTOM VIEW -1 2 A , -1 0 0 V * rD S on = 0 -3 n SOURCE • S O A is P o w e r-D is sip atio n Lim ited

B1030

Abstract: high voltage swiching transistors swiching full KSC2752
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic Unit Collector- Base Voltage Collector-Em itter Voltage V cbO 500 V V cE O 400 V Emitter- Base Voltage VEbo 7 V

6343 opto

Abstract: HCPL0453 HCPL0500 HCPL0501 SFH6315T SFH6316T SFH6343 SFH6343T
Contextual Info: SFH6315T SFH6316T SFH6343T High Speed Optocoupler FEATURES • Surface Mountable • Industry Standard SOIC-8 Footprint • Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes • Isolation Voltage, 3000 VRMS • Very High Common Mode Transient Immunity:

transistor KJJ

Contextual Info: SFH6315T SFH6316T SFH6343T SIEMENS « HIGH SPEED OPTOCOUPLER FEA TU R ES 'lu; ir: ititi • Surface Mountable • Industry Standard SOIC-8 Footprint • Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes • Isolation Voltage, 2500 VRMS

mcd206

Abstract: philips Trimmer 60 pf BLV13 MCD211 C106W
Contextual Info: Philips Sem iconductors VHF power transistor • bSE D DQbSûES P H IL IP S T ll PHI N Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. IN T E R N A TIO N A L NPN silicon planar epitaxial transistor encapsulated in a 4-lead

bgjg

Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Contextual Info: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control

D10N2

Abstract: marking dC
Contextual Info: Order this data sheet by MRF10070H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10070H* Microwave Pulse Power Transistor 70 Watts Peak NPN 1025-1150 MHz Designed for 1025-1150 MHz pulse common base amplifiers. C P liO • Guaranteed Performance at 1090 MHz - Output Power = 70 Watts Peak