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Contextual Info: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ
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Contextual Info: PD - 95103 l IRF1010NSPbF IRF1010NLPbF l HEXFETÆ Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description D VDSS = 55V RDS on = 11m!
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marking code 43a
Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
Contextual Info: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A Description
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91372birf1010ns/lirf1010nsirf1010nl+5packag10marking code 43a43a marking codean-994irf1010n
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AN-994
Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
Contextual Info: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A Description
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91372birf1010ns/lirf1010nsirf1010nl+3an-994irf1010nto262 pcb footprint
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AN-994
Abstract: IRF1010N IRF1010NL IRL3103L 43a 504 pcb mounted
Contextual Info: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ
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60V Single N-Channel HEXFET Power MOSFET in a HEX
Abstract: AN-994 IRF2807L irf2807s
Contextual Info: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ
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irf2807spbfirf2807lpbfeia-41860v single n-channel hexfet power mosfet in a hex+3an-994irf2807lirf2807s
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43a 504
Abstract: marking code 43a AN-994 IRF2807L
Contextual Info: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ
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irf2807spbfirf2807lpbfeia-41843a 504+3marking code 43aan-994irf2807l
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marking code 43a
Abstract: 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504
Contextual Info: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ
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Contextual Info: International IG R Rectifier pd-ms« IR F 2 8 0 7 S /L preliminary HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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f101on
Abstract: GS 069 LF
Contextual Info: P D -9 1 3 7 2 B International KSR Rectifier IR F 1 0 1 0 N S /L H EXFET Pow er M O S F E T • Advanced Process Technology • Surface Mount IRF1010NS • Low-profile through-hole (IRF1010NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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Contextual Info: PD - 9.1372A International IQ R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF101ONS • Low-profile through-hole(IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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AN-994
Abstract: IRL3705Z IRL3705ZL IRL3705ZS
Contextual Info: PD - 95579 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET
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irl3705zpbfirl3705zspbfirl3705zlpbfo-220ab+4an-994irl3705zirl3705zlirl3705zs
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irl3705zpbf
Abstract: IRL3705ZSPBF AN-1005 IRF1010
Contextual Info: PD - 95579A IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D
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IRL3705Z
Abstract: IRL3705ZL IRL3705ZS
Contextual Info: PD - 95854A IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V
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Contextual Info: PD - 95854A IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V
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IRL3705Z
Abstract: IRL3705ZL IRL3705ZS IRL3705
Contextual Info: PD - 95854A IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V
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IRL3705Z
Abstract: IRL3705ZL IRL3705ZS
Contextual Info: PD - 95854 IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V
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L7251-3.1
Abstract: L6284-3.1 AL133-00015.1 MPC4C2.1 th2167.1 DSTH506010.1 PEF3304EV2.1 AU1329.1 A612826.1 PMB6256-V1.1
Contextual Info: 1 Datasheet D 2DFDD D 7!F D"#$FD 8F7 8%995&'7"D 1 1 %DC78C4E91 E59133AA14A38C4E119AA713A74EC8C4E1 1 CE1731EC8C4E1998AF91 24382DA15AC7A91967191F42CDA14EA9#1 9F384EA9#1A59A8#1431FA1F7CEA91
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IRL3705Z
Abstract: IRL3705ZL IRL3705ZS
Contextual Info: PD - 95579 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET
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irl3705zpbf
Abstract: IRL3705Z IRL3705ZL IRL3705ZS IRL3705
Contextual Info: PD - 95579 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET
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Contextual Info: PD - 96345 AUTOMOTIVE GRADE AUIRL3705Z AUIRL3705ZS AUIRL3705ZL Features l l l l l l l l HEXFET Power MOSFET Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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AN-994
Abstract: AUIRL3705ZS auirl3705z
Contextual Info: PD - 96345 AUTOMOTIVE GRADE AUIRL3705Z AUIRL3705ZS AUIRL3705ZL Features l l l l l l l l HEXFET Power MOSFET Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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DIODE FS 601
Abstract: irf 48v mosfet
Contextual Info: PD - 96099 IRFZ48SPbF HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount 175°C Operating Temperature Fast Switching Lead-Free D VDSS = 60V RDS on = 0.018Ω G ID = 50A Description S Third Generation HEXFETs from International Rectifier
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IRF530S
Abstract: IRFZ48 IRFZ48RS IRL3103L IRFZ48RSPBF IRFZ48RL
Contextual Info: PD - 95761 l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications Lead-Free IRFZ48RSPbF IRFZ48RLPbF HEXFET Power MOSFET
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