437 BD Search Results

21-597

Abstract: 245d
Contextual Info: RED INDICATESORIGINAL D DIA V E ASSEMBLE FLATS PER A A 3, 2, 1. V- □ DIA ,516 ,437 .213 K 3 7 5 ±,0D5 DIA ,255 FIG ,312 WRENCH FLATS CABLE ENTRY - E ±.005 WRENCH FLATS 1A TAI-117 -003 SHGWN .290 .578 .500 ,255 .516 .437 .290 •57B .500 .255 .516 .437

BD433

Abstract: BD434 BD435 BD436 BD437 BD438
Contextual Info: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

bd435 fairchild

Contextual Info: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

BD437

Abstract: BD433 ic 437 BD434 BD435 437 ic
Contextual Info: SavantIC Semiconductor Product Specification BD433/435/437 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD434/436/438 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter

BD435

Abstract: ic 435 BD433 BD437
Contextual Info: Inchange Semiconductor Product Specification BD433/435/437 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD434/436/438 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1

BD435

Abstract: transistor bd435 BD433 BD434 BD436 BD437 BD438
Contextual Info: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD433 : BD435 : BD437 Collector Emitter Voltage : BD433

BD435

Abstract: BD437 transistor BD435 BD433 ic 437
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD433/435/437 TRANSISTOR NPN TO-126 FEATURES Amplifier and switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage

BD434

Abstract: BD438 BD436
Contextual Info: SavantIC Semiconductor Product Specification BD434/436/438 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD433/435/437 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter

BD434

Abstract: BD436 ic 438 BD438
Contextual Info: Inchange Semiconductor Product Specification BD434/436/438 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD433/435/437 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1

BD441

Abstract: bd 426 BD 440 NPN transistors BD437 BD - 100 V BD 439 437 bd ic 437 BD439 B0439
Contextual Info: « BD 437 • BD 439 • BD 441 'W Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Features: Besondere Merkmale: • Hohe Spitzenleistung • High peak power

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD433/435/437 TRANSISTOR NPN TO-126 FEATURES Amplifier and Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage

BD435

Abstract: BD437 BD433 TRANSISTOR BD433
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD433/435/437 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current 4 A ICM: Collector-base voltage BD433 22 V V(BR)CBO:

8043

Abstract: 33T4 BD433 BD434 BD435 BD436 BD437 BD438 DDD121D
Contextual Info: BD433, BD435, 437 BD434, BD436, BD438 BD433, 435, 437 BD434, 436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS M edium pow er linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 DIM MIN. MAX. ‘V A 7.4

Contextual Info: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector Base Voltage S ym bol BD433 R a tin g VcBO BD435

Contextual Info: 1N5518BUR-1 thru 1N5546BUR-1 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV Low Voltage Avalanche 500 mW Zener Diodes Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface mount Zener voltage

596B4

Abstract: lucent gps 2424 ED83143-30 GALAXY MILLENNIUM Controller Product Manual GALAXY MILLENNIUM lucent 596B4 Lucent 80A cabinet BSM 225 galaxy vector controller 596B4 alarm code
Contextual Info: Galaxy Power System 2424 GPS 2424 H569-437 User’s Guide Select Code 167-792-159 Comcode 108305251 Issue 5 June 2000 2000 Lucent Technologies User’s Guide Select Code 167-792-159 Comcode 108305251 Issue 5 June 2000 Lucent Technologies Galaxy Power System 2424

bd437 siemens

Abstract: transistor d437 D437 transistor bd 439
Contextual Info: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase

RMP BH

Abstract: RE36 C04MX V40E
Contextual Info: 36 A0.0-=6'*B=C=*92)CD*E)FG*" B);).H)6*$," !"##$%&' )*"+,*-.*/012%345)6* 78*94:6;)*<=>)6*?4@:A) % &)("437%6&',4+%"2%=HIJOM./%20%2+(*&,56P%I$+% HMNN<%"6%3%:4B4&')7+:Q%2&0"23779%M./%20%(+0)+,3B

BD NPN transistors

Abstract: BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442
Contextual Info: POWER TRANSISTORS continued > < > > m o _u UJ > o an c e h i u. _c d Cï> > < X ca E > BD 433 BD 434 BD 435 BD 436 BD 437 BD 438 BD 439 BD 440 BD 441 BD 442 BD 533 BD 534 BD 535 BD 536 BD 537 BD 538 BD 663 BD 664 BD 705 BD 706 BD 707 BD 708 BD 709 BD 710

79EB365

Abstract: sdram 79RC32365 AN-379 RC32365
Contextual Info: SDRAM Architecture, Signals and Routing Considerations for the RC32365 Application Note AN-437 By Rakesh Bhatia Notes Introduction The RC32365 device is a member of the IDT Interprise™ family of integrated communications processors. It provides a single chip solution for virtual private network VPN platforms with bandwidth requirements ranging from full T1/E1 through fractional T3. Featuring a MIPS CPU core, the device also includes a

Contextual Info: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Tiva TM4C129CNCPDT Microcontroller D ATA SHE E T D S -T M 4C 129C NCP DT - 1 5 6 3 8 . 2 7 11 S P M S 437 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated. Tiva and TivaWare are trademarks of Texas Instruments Incorporated. ARM and Thumb are

Contextual Info: P h ilip s S em icon ducto rs P relim inary sp e cifica tio n S ilicon ep itaxial-b ase tran sistors QUICK REFERENCE DATA MIN. CONOTTIONS BD433 PINNING - TO-126 SOT32 DESCRIPTION PARAMETER collector-emitter voltage Veto MAX. UNIT SYMBOL Yces if n DESCRIPTION

Contextual Info: 4 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS U N P U B L I S H E D COPYRIGHT 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. LÛC ,19 DIST BD ALL INTERNATIONAL RIGHT5 RESERVED. REVISIONS 48 ZONE LTR c D D + DATE D ES C RIP TIO N