4355 DATA SHEET Search Results

Contextual Info: CAMBION Wearnes Cambion LTD  Castleton, Hope Valley, Derbyshire, S33 8WR, England Telephone: +44 0 1433 621555 Fax: +44(0)1433 621290 Web: www.cambion.com Email: enquiries@cambion.com Technical Data Sheet 450-4355 Teflon Insulated, press mount socket, for .080 (2,03) diameter pins

450-4355-01-03-XX

Contextual Info: CAMBION Wearnes Cambion LTD â Castleton, Hope Valley, Derbyshire, S33 8WR, England Telephone: +44 0 1433 621555 Fax: +44(0)1433 621290 Web: www.cambion.com Email: enquiries@cambion.com Technical Data Sheet 450-4355-01-03-XX Insulated, press mount, one piece socket, for .080 (2,03)

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage

PN4355

Abstract: PN4356 PN4354
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage

40.4355

Abstract: pressure to current converter Ub-12V 4355-420/jumo pressure jumo pressure piezoresistive pressure transmitter diaphragm pressure Pressure Transmitter jumo jumo DIN43650
Contextual Info: M. K. JUCHHEIM GmbH & Co 3 6 0 3 5 Fu lda, G erm an y Phone Fax Telex email 0661 6003-0 (0661)6003-607 4 9 701 ju fd JUMO_de@e-mall.com For United Kingdom: For USA: Jum o In strum ent Co. Ltd. Jum o Process Control Inc. Temple Bank, Riverway, Harlow, Essex CM20 2TT

4355 data sheet

Abstract: PN4354 PN4355 PN4356
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage

PN4354

Abstract: PN4355 PN4356
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage

500kh

Abstract: FP1308R REGULATORS S 812
Contextual Info: High Current, High Frequency, Power Inductors FLAT-PAC FP1308R Series Applications • • • • • • • • SMD Device HF FREE Environmental Data • Storage temperature range: -40°C to +125°C • Operating temperature range: -40°C to +125°C

Contextual Info: HALOGEN High Current, High Frequency, Power Inductors HF Pb FREE FLAT-PAC FP1308R Series Applications • • • • • • • • SMD Device Environmental Data • Storage temperature range: -40°C to +125°C • Operating temperature range: -40°C to +125°C

8290s

Contextual Info: SPICE Device Model Si4170DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

4405 mosfet

Abstract: mosfet 4405 a6529 4405 n channel mosfet
Contextual Info: SPICE Device Model Si7798DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

74290 Decade Counter

Abstract: 74290 Counter
Contextual Info: 290 CONNECTION DIAGRAM P IN O U T A 34 / ¡4/74290 ° l 00 54LS/74LS290 o / o c ^ BCD DECADE COUNTER DESCRIPTION— The ’290 is a 4-stage ripple counter containing a hrgb speed flip-flop acting as a divide-by-tw o and three flip-flops connected as a divide-by-five. HIGH sign als on the Master Reset MR inputs override the

74290

Abstract: 74290 Decade Counter 74290 Counter 74290PC 54LS290DM
Contextual Info: NATIONAL SEMICOND -CLOGIO DEE D I b S D U E E -T- 0 D b 3 cJòti t. I V5-23-/3 290 C O N N ECTIO N DIAGRAM PINOUT A 54/74290 54LS/74LS290 BCD DECADE COUNTER MS [7 i n vcc N C [T T51 MR [T 12] MR m s 02 E TT]c p i Qi jT ]0 CPo n c D ESCRIPTIO N — The '290 is a 4-stage ripple counter containing a high

S-82025

Abstract: si7798 64055
Contextual Info: SPICE Device Model Si7798DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

8290s

Contextual Info: SPICE Device Model Si4170DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

MOS 4362

Abstract: Si7170DP MOSfet 4362 SI7170 S-80758
Contextual Info: SPICE Device Model Si7170DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

C80C51F930

Abstract: 74LVC1G3157GW
Contextual Info: S i 4 4 5 5 - 2 Wa y L i n k - D E M O S i4455 E Z R ADIO TWO - W AY L INK D EMO K IT U SER ’ S G U ID E 1. Kit Overview This user's guide describes Silicon Labs' Si4455 EZRadio® Two-Way Link demo kit. The kit contains two RF nodes based on the RFStick board to support evaluation and development of sub-GHz RF links with the Si4455 EZRadio

Contextual Info: IRFP450 S e m iconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A ,500V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

48V battery

Abstract: DN444 FDS3672 48v linear power supply LTC4355 BAS21 LTC4354 TA06
Contextual Info: Ideal Diodes Protect Against Power Supply Wiring Errors Design Note 444 Meilissa Lum Introduction High availability systems often employ dual feed power distribution to achieve redundancy and enhance system reliability. ORing diodes join the feeds together at the

ITT 435-1

Contextual Info: S iW H S electronic June 1992 HM 65798 HI-REL DATA SHEET_ 64 k x 4 HIGH SPEED CMOS SRAM FEATURES . TTL COMPATIBLE INPUTS AND OUTPUTS • FAST ACCESS TIME : 25*/35/45/55 ns . LOW POWER CONSUMPTION ACTIVE: 660 mW STANDBY : 190 mW . WIDE TEMPERATURE RANGE : - 55°C TO + 125°C

10VJ

Abstract: IRFP450 TA17435 TB334
Contextual Info: IRFP450 Semiconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A, 500V • rDS ON = 0.40062 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: s Provisional Data Sheet No. PD-9.1398A International IOR Rectifier IRHNA7360SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 400 Volt, 0.200, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology

74290 Counter

Abstract: 74290 Decade Counter 74290 MQ3 circuit diagram 74LS290PC 54LS290DM 74290DC 54290DM 54290FM 54LS290FM
Contextual Info: 290 C O N N E C T IO N D IA G R A M P IN O U T A '^4/74290 ° 54LS/74LS290 t b ° 0/0o^>^> BCD DECADE COUNTER MS [7 Î 4 I V cc NC |T Î 3 I MB ms [7 T i l MR q 2 [T T Ï] CPi [T To] c p o Qi D E S C R IP T IO N — T h e ’290 is a 4 -sta g e rip p le c o u n te r c o n ta in in g a hrgb

datasheet irfp450 mosfet

Abstract: rectifier d 355 n 2000 IRFP450 TA17435 TB334
Contextual Info: IRFP450 Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP450 • 14A, 500V • rDS ON = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds