4330 030 50 Search Results

J025

Contextual Info: PRINCETON ADVANCED ^ 2E | ’?BöQb44 0000014 T | _ DELAY MODULES, TTL, PROGRAMMABLE 4 BIT and 6 BIT 6 BIT 4 BIT v„ • P, PAC v„ x x x x IN OUT GNO ! Vic V« 1 1 5 • IN 6ND ! 1 5 % S P5P6 V“ PAC X X X X GND j our m o 6ND -2.4 50 .CTO .300 |0 2 5

Contextual Info: V910ME05 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 PHASE NOISE (1 Hz BW, typical) £(f) (dBc/Hz) FEATURES • Frequency Range: 4020 - 4330 MHz • Tuning Voltage: 1.5-11 Vdc • MINI-14S-L - Style Package

Contextual Info: V910ME15 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 PHASE NOISE (1 Hz BW, typical) £(f) (dBc/Hz) FEATURES • Frequency Range: 4020 - 4330 MHz • Tuning Voltage: 1.5-11 Vdc • MINI-14S-L - Style Package

Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY925 FEATURES PINNING - SOT365A • 26 V nominal supply voltage PIN • 23 W output power into a load of 50 Q with an RF drive power of 36 mW. APPLICATIONS DESCRIPTION 1 RF input 2 Vsi 3 VS2

Contextual Info: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting

Contextual Info: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA

c38 transistor

Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
Contextual Info: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

Contextual Info: APT20M10JLL 200V 185A 0.010 W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

DIODE 720

Contextual Info: APT20M10JLL 200V 185A 0.010W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

fast diode SOT-227

Contextual Info: APT20M10JFLL 200V 185A 0.010W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package

t04 68 3 pin transistor

Abstract: PHILIPS UHF AMPLIFIER MODULE LIST BGY200 2222 861 phaseshift
Contextual Info: Product specification Philips Semiconductors UHF amplifier module BGY200 FEATURES DESCRIPTION • 7.2 V nominal supply voltage The BGY200 is a four-stage UHF amplifier module. It consists of four NPN silicon planar transistor chips mounted together with matching and bias circuit

BGY210

Abstract: Philips DATA Handbook system UHF amplifier module DCS1800 SC09 2222 030 capacitor philips MSA489 MSA915 BGY21
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY210 UHF amplifier module Preliminary specification File under Discrete Semiconductors, SC09 1996 May 13 Philips Semiconductors Preliminary specification UHF amplifier module BGY210 FEATURES PINNING - SOT321B • 6 V nominal supply voltage

philips rf choke ferrite

Contextual Info: N AUER PHILIPS/DISCRETE bbsa^ai 0026766 07T * A P X BLT93/SL b'lE D A UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in hand-held radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.

ferrite 4312

Abstract: SL 100 NPN Transistor
Contextual Info: PHILIPS INTERNATIONAL bSE D 711002b QDbEböS 333 I IPHIN BLT93/SL • A UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in hand-held radio stations in the 900 MHz communications band. This device has been designed specifically fo r class-B operation.

epsilam 10

Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial

Contextual Info: N AUER PHILIPS/DISCRETE bTE ]> • bbS3T31 QD3Q2bfl 347 r n m p s u o m p o n e n ts D atash eet status Product specification date o f issue May 1991 BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is a four-stage UHF amplifier module, primarily designed

philips ferroxcube 4c6

Abstract: ferroxcube 4322 020 97171 68w transistor transistor 68W MCA264 choke marking nb 03 FERROXCUBE 4330 BLF175 ferroxcube 4322 M11 marking transistor
Contextual Info: Philips Semiconductors Product specification HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES 7 ^ 3 1 -// SbE D I 7110Û2L BLF175 DGM3712 2Ô2 « P H I N PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control

Tyco 408-7424

Abstract: bellmouth standard faston flag receptacles crimp height 408-7424 Tyco faston 187-series application notes on wire drawing machine
Contextual Info: Application Specification 114-2152 AMPLIVAR* FASTON* Flag Receptacles NOTE i 15 SEP 08 Rev B All numerical values are in metric units [with U.S. customary units in brackets]. Dimensions are in millimeters [and inches]. Unless otherwise specified, dimensions have a tolerance of +0.13 [+.005] and angles have a tolerance of +2 .

Contextual Info: bbSa^El ODETBbM 404 « A P X Philips Semiconductors Product specification HF/VHF power MOS transistor — BLF175 N AMER PHILIPS/DISCRETE FEATURES b'JE D PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability

Contextual Info: bhi.53c131 QOSTSHT ?D2 BB A P X Philips Semiconductors Product specification UHF push-pull power transistor — — — — — FEATURES — H BLV945A AMER PHILIPS/DISCRETE b^E J> ' QUICK REFERENCE DATA • Double internal input matching for easy matching and high gain

epsilam 10

Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial

MRC106

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Contextual Info: Philips Semiconductors • 711D6gb 0 D b 3 m b ' PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double internal input matching for easy matching and high gain T7b M P H I N Product specification bSE D BLV945A QUICK REFERENCE DATA RF performance at Th = 25 °C In a common emitter class-AB push-pull test

ITT Cannon

Abstract: dmc turret 616266 414DA-8HEX DMC CRIMP TOOL CHART veam pin 27977-16T50 DMC CRIMP TOOL calibration CHART veam A43240 T/AF8 turret A43240-8
Contextual Info: VEAM Cover headline Cover headline CIR Series Assembly Guide ITT Corporation A Historical Achievement of Technology Leadership Defining and Championing Innovation Showcasing a portfolio of creativity, ITT’s “Engineered For Life” execution embraces products which have

IN753

Abstract: IN751 IN756 1N4335 IN4372 IN759 MICROSEMI 1N746A JANTX IN750 ln741 IN747
Contextual Info: 1 1 .0 12.0 13.0 14.0 15.0 17.0 19.0 * rs o co i n cm H O O O O O O O O o o o CM CMCMcrj «O Ps 00 oi o cm co in io oo o cm^ rs 30.0 33.0 36.0 — Diode types presently available from Microsemi Corporation are shown in bold type. 8 .0 10.0 29.0 20% 3 7 .0