4320B Search Results

Contextual Info: TC58NVG2S0FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks.

D2360

Contextual Info: Alphanumeric Index Part Num ber Type IIBM11D1320BB. IBM11D1320BC. IBM11D1320BD. IBM11D1320L. IBM1 1 D1360BA. IBM11D1360BB. IBM11D1360BD. IBM11D1360EA. IBM11D1360ED. IBM11D1360L. IBM11D1370BA. IBM11D1400BA. IBM11 D1480BA.

Contextual Info: TC58NVG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks.

NUMONYX DDR

Abstract: NAND16GW3D2B
Contextual Info: NAND16GW3D2B 16-Gbit, 4320-byte page, 3 V supply, multiplane architecture, multilevel cell NAND flash memory Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage applications

Contextual Info: ISO 9001 CERTIFIED 42 AMP, 200 VOLT 3 PHASE BRIDGE SMART POWER HYBRID IVI.S.KENNEDY CORP. 4320 8 1 7 0 Thom pson Road Cicero, N.Y. 1 3 0 3 9 3 1 5 6 9 9 -9 2 0 1 PRELIMINARY FEATURES: • • • • • • • 2 0 0 V , 4 2 A m p Capability Ultra Low Therm al Resistance - Junction to Case - 0 .3 °C A V

Contextual Info: TC58NYG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S0F is a single 1.8V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks.

TPS 4339

Contextual Info: IB M 1 1 D 4 3 2 0 B IB M 1 1 D 8 3 2 0 B 4M/8M x 32 DRAM Module Features • 72-Pin JE D E C Standard Single-ln-Line Memory Module • Performance: ! -60 tRAC i RAS Access Tim e i 60ns • High Performance C M O S process • Single 5V, ± 0.5V Power Supply.

TC58NVG2S0FTA00

Contextual Info: TC58NVG2S0FTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks.