43 AP Search Results

Contextual Info: MM36O Axial Leaded Oval Lead Diameter: ➝ L .43/11 .43/11 .43/11 .43/11 .43/11 .43/11 .43/11 .43/11 .43/11 .43/11 .55/14 .55/14 .55/14 .55/14 .55/14 .55/14 .75/19 .75/19 .75/19 .75/19 .75/19 .75/19 1.04/26.5 1.04/26.5 1.04/26.5 1.04/26.5 1.26/32 1.26/32 1.26/32

Contextual Info: 10:36 Seite 103 Information 27.05.2011 109 VARIODRIVE Compact BG 43 electronics VarioDrive C 106 ECI motor BG 43 motors BG motor 105 BCI motor BG 43 application area and specific solutions AC motors 104 Specifications BG 43 technical information VARIODRIVE

100mw

Abstract: RLT67100G DSA0010917
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT67100G TECHNICAL DATA High Power Visible Wavelength Laserdiode Structure: InGaAlP/GaAs, Aperture: 1 x 30 µm

RLT68250G

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT68250G TECHNICAL DATA High Power Visible Wavelength Laserdiode NOTE! Structure: AlGaInP/GaAs, Aperture: 1 x 50 µm

RLT7810G

Abstract: 780 laser diode laser diode 780 nm
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT7810G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, Aperture 3 x 1.5 µm

Laser Diode 250mW

Abstract: RLT85250G 250MW Laser-Diode 850 PIN photodiode 850 nm
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT85250G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Aperture: 1.5 x 80 µm Lasing wavelength: 850 nm typ.

840 nm GaAs

Abstract: RLT8350G NM12
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT8350G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, Aperture 3 x 1.5 µm²

6496

Abstract: transistor 115 7144
Contextual Info: 25 25 25 25 25 25 25 25 43 43 43 43 43 43 43 43 80 80 80 80 80 80 80 80 130 130 130 130 130 130 130 130 175 175 175 175 175 175 175 175 6494-010 6494-012 6494-016 6494-020 6494-024 6494-028 6494-036 6494-230 6495-010 6495-012 6495-016 6495-020 6495-024 6495-028

RLT808100GM

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808100GM TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, aperture 15 x 1.5 µm

RLT78100GLI

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT78100GLI TECHNICAL DATA High Power Infrared Wavelength Laserdiode Structure: AlGaAs/GaAs, Aperture: 3 x 1 µm, single mode

RLT85500G

Abstract: 500MW
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT85500G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Aperture: 1.5 x 120 µm Lasing wavelength: 850 nm typ.

Contextual Info: 25 25 25 25 25 25 25 25 43 43 43 43 43 43 43 43 80 80 80 80 80 80 80 80 130 130 130 130 130 130 130 130 175 175 175 175 175 175 175 175 6494-010 6494-012 6494-016 6494-020 6494-024 6494-028 6494-036 6494-230 6495-010 6495-012 6495-016 6495-020 6495-024 6495-028

RLT1460-5G

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT1460-5G TECHNICAL DATA Infrared Laserdiode NOTE! Structure: QW structure Lasing wavelength: 1460 nm typ. Lasing Aperture: 1.5 x 3 µm²

50mw

Abstract: RLT8550G
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT8550G TECHNICAL DATA High Power Infrared Laserdiode Aperture: 1.0 x 3.0 µm² Lasing wavelength: 850 nm typ., single mode

RLT78500G

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT78500G TECHNICAL DATA High Power Infrared Wavelength Laserdiode NOTE! Structure: AlGaAs/GaAs, Aperture: 50 x 1 µm²

RLT85100G

Abstract: Laser-Diode 850
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT85100G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Aperture: 1.0 x 3.0 µm² Lasing wavelength: 850 nm typ., singlemode

RLT7605G

Abstract: laser diode 760
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT7605G TECHNICAL DATA Infrared Laserdiode Structure: GaAlAs quantum well, lasing aperture 1 x 3 µm² Lasing wavelength: 760 nm typ.

laserdiode application

Abstract: RLT8081000G Laser-Diode 808 CW laser diode 808 nm
Contextual Info: 990702 ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT8081000G TECHNICAL DATA High Power Infrared Laserdiode Structure:High Efficiency MOVCD Quantum Well Design

7805l

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at, http://www.roithner.mcb.at CHIP 7805L TECHNICAL DATA Infrared Wavelength Laserdiodechip Structure: index guided, single transverse mode

RLT6650G

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT6650G TECHNICAL DATA High Power Visible Laserdiode Structure: High Efficiency MOVCD Quantum Well Design

RLT1300-5G

Abstract: SOT-148
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1300-5G TECHNICAL DATA Middle Power Infrared Laserdiode Structure: GaInAsP/InP SQW structure

2 Wavelength Laser Diode

Abstract: SOT-148 RLT1060-100GS high power infrared laser diode single power diode package MW220
Contextual Info: ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT1060-100GS TECHNICAL DATA High Power Infrared Laser Diode NOTE! Lasing mode structure: single mode

laserdiode 1020 nm

Abstract: RLT1020-1000G
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1020-1000G TECHNICAL DATA PRELIMINARY High Power Infrared Laserdiode Structure: InGaAs quantum well

CHIP1310L

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at, http://www.roithner.mcb.at CHIP 1310L TECHNICAL DATA Infrared Wavelength Laserdiodechip Structure: index guided, single transverse mode