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    4260 TRANSISTOR Search Results

    4260 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    4260 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4260 transistor

    Abstract: regulator tle 4260
    Contextual Info: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4260 Features Low-drop voltage Very low quiescent current Low starting current consumption integrated temperature protection Protection against reverse polarity Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms


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    P-T0220-5-1 Q67000-A8187 Q67000-A9044 P-T0220-5-1 P-T0220-5-2 P-T0220-5-2 P-T0220-5-H/S 4260 transistor regulator tle 4260 PDF

    4260 transistor

    Abstract: regulator tle 4260 4260 voltage regulator AEB00578 AEP00577 AES00579 Q67000-A8187 Q67000-A9044 TLE4260 TLE4260S
    Contextual Info: 5-V Low-Drop Voltage Regulator TLE 4260 Features • • • • • • • • • • • Low-drop voltage Very low quiescent current Low starting current consumption Integrated temperature protection Protection against reverse polarity Input voltage up to 42 V


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    Q67000-A8187 P-TO220-5-1 Q67000-A9044 P-TO220-5-2 P-TO220-5-H/S GPT05256 4260 transistor regulator tle 4260 4260 voltage regulator AEB00578 AEP00577 AES00579 Q67000-A8187 Q67000-A9044 TLE4260 TLE4260S PDF

    SIEMENS AVR GENERATOR

    Abstract: 1J27 AF regulator tle 4260 SIEMENS AVR TLE4260 data 4260 transistor application of IC 566 function generator IC 566 function generator SIEMENS capacitor 40v 1J27
    Contextual Info: S IE M E N S 5-V Low-Drop Voltage Regulator TLE 4260 Preliminary Data Bipolar IC Features • • • • • • • • • • • Low-drop voltage Very low quiescent current Low starting current consumption Integrated temperature protection Protection against reverse polarity


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    Q67000-A8187 P-T0220-5-1 Q67000-A9044 P-T0220-5-2 P-T0220-5-H/S fl235b05 SIEMENS AVR GENERATOR 1J27 AF regulator tle 4260 SIEMENS AVR TLE4260 data 4260 transistor application of IC 566 function generator IC 566 function generator SIEMENS capacitor 40v 1J27 PDF

    ILE4260-2

    Abstract: TO220-5 package ILE4260S-2 ILE4260 P-TO220-5
    Contextual Info: TECHNICAL DATA 5-V Low-Drop Voltage Regulator ILE 4260 is a 5-V low-drop fixed-voltage regulator in P-TO220-5 package. The maximum input voltage is 42 V 65 V≤ 400 ms . The device can produce an output current of more than 500 mA. It is shortcircuit-proof and incorporates


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    P-TO220-5 ILE4260-2 P-TO220-5-2 P-TO220-5-1 ILE4260-2 TO220-5 package ILE4260S-2 ILE4260 PDF

    FDB3632

    Abstract: LTC4260 SMBT70A 4260F 4-260F suppressor 5v marking code 749 fairchild G1235
    Contextual Info: LTC4260 Positive High Voltage Hot Swap Controller with 2 I C Compatible Monitoring U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 4260 Hot SwapTM controller allows a board to be safely inserted and removed from a live backplane. Using


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    LTC4260 LTC4302 LTC4350 LT4351 LTC4354 4260f FDB3632 LTC4260 SMBT70A 4260F 4-260F suppressor 5v marking code 749 fairchild G1235 PDF

    Contextual Info: LTC4260 Positive High Voltage Hot Swap Controller with I2C Compatible Monitoring DESCRIPTION FEATURES n n n n n n n n n n Allows Safe Insertion into Live Backplane 8-Bit ADC Monitors Current and Voltage I2C /SMBus Interface Wide Operating Voltage Range: 8.5V to 80V


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    LTC4260 24-Lead 32-Lead LTC4302 LTC4350 LT4351 LTC4354 4260fb PDF

    S24 MSOP-8

    Contextual Info: LTC4260 Positive High Voltage Hot Swap Controller with I2C Compatible Monitoring Description Features n n n n n n n n n n Allows Safe Board Insertion into Live Backplane 8-Bit ADC Monitors Current and Voltage I2C /SMBus Interface Wide Operating Voltage Range: 8.5V to 80V


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    LTC4260 4260fc com/LTC4260 S24 MSOP-8 PDF

    NCP18XH103D03RB

    Abstract: NCP18WF104D ncp18wf104f12rb NCP18XQ102p03RB NCP18WB473D ncp18wf104d03rb
    Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please


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    NCP18WM474p03RB NCP18XH103D03RB NCP18WF104D ncp18wf104f12rb NCP18XQ102p03RB NCP18WB473D ncp18wf104d03rb PDF

    Contextual Info: J.Elieu ^s.mi-L-onaactoi I/ loaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SB757 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package •High collector current •Wide area of safe operation


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    2SB757 2SD847 PDF

    2SA1062

    Abstract: 2SC2486
    Contextual Info: AOK AOK Semiconductor Product Specification 2SA1062 S ilicon PNP Power Transistors D ES C R IP TIO N • W ith TO -3PN package • C om plem ent to type 2SC 2486 • High collector pow er dissipation A P P LIC A T IO N S • High pow er audio frequency am plifier


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    2SA1062 2SC2486 2SC2486 PDF

    AZP94

    Contextual Info: AZP94 PECL/ECL ÷1, ÷2 Clock Generation Chip with Tristate Compatible Outputs www.azmicrotek.com FEATURES DESCRIPTION • Selectable Divide Ratio • Selectable Enable Polarity and Threshold CMOS or PECL • Tristate Compatible Outputs • Input Buffer Powers Down


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    AZP94 AZP94 PDF

    2N7092

    Contextual Info: 2N7092 CX'SiSconix in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V fDS(ON) <n) (A) -200 0.50 -8.0 V(BR)DSS •d 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1


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    2N7092 O-257AB 10peration 2N7092 PDF

    2n3910

    Abstract: 2N3914 2n3219 2N4260 2N2708 2N3218 2N4209 2N915 2N2004 2N2333
    Contextual Info: Discrete Devices Transistors Cont. Choppers M axim um Ratings Polarity PD Ambient h f e @ >c VCE V e B Volts Volts Min/Max m A II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß m A/m A mV — 2.0 rd@l B mA Ohms Cob mA Package pF M ax 2N 943


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    2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A 2N2865 2n3910 2N3914 2n3219 2N4260 2N2708 2N3218 2N4209 2N915 PDF

    9131

    Abstract: IRFF9131 1RFF9130 IRFF9130 3919 L 9132 k 3919 IRFF9132 IRFF9133 LAE 0132
    Contextual Info: SILICONIX INC 18E D • ÔSSH73S 0 0 1 4 9 3 7 T ■ IRFF9130/9131 /9132/9133 C X 'S i f l c c T n l x J u w incorporated P-Channel Enhancement Mode Transistors T -3 BOTTOM VIEW. PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF9130 " g p Id (A -100 0.30 -6.5 IRFF9131


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    IRFF9130/9131 O-205AF IRFF9130 IRFF9131 IRFF9132 IRFF9133 9131 1RFF9130 3919 L 9132 k 3919 LAE 0132 PDF

    2N4260

    Abstract: 2N4261
    Contextual Info: TYPES 2N4260, 2N4261 P-N-P SILICON TRANSISTORS B U L L E T IN N O . O L -S 7 3 1 1 9 3 3 , J U N E 1 9 7 3 DESIGNED FOR VHF AND UHF AMPLIFIER APPLICATIONS • High f j . . . 2 GHz Min 2N4261 • Low Capacitances . . . 2.5 pF Max Ccb and Ceb • Calculated f maxt . . . 1.27 GHz Min (2N4261)


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    2N4260, 2N4261 2N4261) 2N4260 PDF

    2n3219

    Abstract: 2N4260 RAYTHEON 2N3635 2N2004 2N2708 2N3910 2N3960 2N4261 2N915 2N2333
    Contextual Info: Discrete Devices Transistors Cont. Choppers M axim um Ratings Polarity PD Ambient h f e @ >c VCE V e B Volts Volts Min/Max m A II Type Electrical Characteristics @ 25° C V c E (S a t) @ Volts m A/m A mV — 2.0 rd@lB mA Ohms Cob mA Package pF M ax 2N 943


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    2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A BT2946 2n3219 2N4260 RAYTHEON 2N3635 2N2708 2N3910 2N3960 2N4261 2N915 PDF

    Application of irf840

    Abstract: irf840 power supply TRANSISTOR mosfet IRF840 datasheet irf840 mosfet IRF840 TA17425 TB334
    Contextual Info: IRF840 Data Sheet July 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRF840 NOTE: PACKAGE TO-220AB 2312.3 Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


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    IRF840 O-220AB Application of irf840 irf840 power supply TRANSISTOR mosfet IRF840 datasheet irf840 mosfet IRF840 TA17425 TB334 PDF

    Q2T3725

    Contextual Info: TYPE Q2T3725 QUAD N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L -S 7 3 1 1 5 1 8 , A U G U S T 1 9 7 1 - R E V I S E D M A R C H 1 9 7 3 FAST, H IG H -V O LT A G E , H IG H -C U R R E N T CORE D R IV E R S TOP VIEW • h p e Guaranteed at 100 mA and 500 mA


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    Q2T3725 TIS127 14-PIN PDF

    Contextual Info: SGL160N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is


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    SGL160N60UF O-264 PDF

    Contextual Info: SGL160N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is


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    SGL160N60UFD O-264 PDF

    IGBT cross-reference

    Abstract: SGL160N60UF SGL160N60UFTU sgl160n60
    Contextual Info: SGL160N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is


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    SGL160N60UF O-264 SGL160N60UF SGL160N60UFTU /PDF/SGL160N60UF 27-Jul-02 IGBT cross-reference SGL160N60UFTU sgl160n60 PDF

    SGL160N60UFDTU

    Abstract: SGL160N60UFD IGBT cross-reference obsolete ic cross reference IGBT cross
    Contextual Info: SGL160N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is


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    SGL160N60UFD O-264 SGL160N60UFD SGL160N60UFDTU /PDF/SGL160N60UFD 27-Jul-02 SGL160N60UFDTU IGBT cross-reference obsolete ic cross reference IGBT cross PDF

    tpl 280-4

    Abstract: ULS2800 ULS2000 ULS2003 ULS2002 IC 2804 ls2000 ULS2022 8DARLINGTON ULS-2004
    Contextual Info: INTEGRA TED POUER 02 4825898 im w m D Ë | 40250^0 □□□□2bS □ I N TE G R A T E D POWER R M 82D 0 0 2 6 5 D Darlington Transistor Arrays T E D SEMICONDUCTORS, LTD. Features Description 7 or 8 darlington power drives In single package , 50V or 95V breakdown voltage


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    MA01845 tpl 280-4 ULS2800 ULS2000 ULS2003 ULS2002 IC 2804 ls2000 ULS2022 8DARLINGTON ULS-2004 PDF

    4260 transistor sot

    Contextual Info: RF2381  3&6& //8/$5 7'0$&'0$:&'0$ /,1($5 9$5,$%/( *$,1 $03/, ,(5 7\SLFDO $SSOLFDWLRQV • CDMA PCS/Cellular Handsets • W-CDMA Handsets • TDMA PCS/Cellular Handsets GENERAL PURPOSE AMPLIFIERS 4 3URGXFW 'HVFULSWLRQ The RF2381 is a linear variable gain amplifier suitable for


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    RF2381 RF2381 1950MHz, 4260 transistor sot PDF