424400 80 Search Results

424400-70

Abstract: 424400 424400 60 424400-60 424400LA PD42S4400 42S44 pd42440 424400gs-9jd 424400 dram
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The µPD42S4400, 424400 are 1,048,576 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

NEC 424400

Abstract: 424400-60 NEC 424400-70 424400-70 424400 60 424400 memory 424400 PD42S4400 14A8
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The µPD42S4400, 424400 are 1,048,576 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

NEC 424400

Abstract: D424400GS 424400-70 NEC 424400-70 424400 60 d424400 424400-60 424400 424400-70 nec uPD424400
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ,uPD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¡PD42S4400, 424400 are 1,048,576 w ords by 4 bits CMOS dynam ic RAMs. The fast page mode capability realize high speed access and low power consum ption.

NEC 424400-70

Abstract: PD42S4400 NEC 424400 uPD424400 NEC 424400-60
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The |iPD42S4400, 424400 are 1,048,576 words by 4 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

NEC 424400-70

Abstract: 424400-70
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S4400, 424400 4 M BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The /¿PD42S4400, 424400 are 1,048,576 w ords by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.

NEC 424400

Abstract: NEC 424400-70 424400 60 424400 80 uPD424400 424400
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /IPD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¿PD42S4400, 424400 are 1,048,576 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

NEC 424400-70

Abstract: NEC 424400 424400-70 NEC 424400-60 424400-60 424400 memory 424400 424400-70 nec TAA 981 uPD424400
Contextual Info: DATA SHEET NEC / M O S INTEGRATED CIRCUIT jUPD42S4400, 424400 4 M-BIT D YN A M IC RAM 1 M -W O RD B Y 4-BIT, FAST PAGE M O DE Description The J/PD42S4400, 424400 are 1,048,576 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

S201 01

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000A32 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C -422000A 32 is a 2,0 97,1 52 w ords by 32 bits dynam ic RAM m odule on w hich 16 p iece s of 4 M DRAM: ^P D 424400 are assembled.

CHN 640

Abstract: MC-421000A32B-80 MC-421000A32B-70 chn 031
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-421000A32 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description T h e M C -4 210 00A 32 is a 1 ,0 48,5 76 w ords by 32 b its dyn a m ic RAM m o dule on w hich 8 p iece s of 4 M DRAM: jjP D 424400 are assembled.

424400 60

Abstract: NEC 424400-60 424400 424400 memory 424400V NEC 424400-70
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿¿P D 42S4400, 4 2 4 4 0 0 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n The / jPD42S4400, 424400 are 1,048,576 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

MET-13

Contextual Info: NEC NEC Electronics Inc. PPD424400 1,048,576 x 4-Bit Dynamic CMOS RAM Description Pin Configurations The n PD 424400 is a fa st-p ag e dynam ic RAM organized as 1,048,576 w ords by 4 bits and designed to operate 26/20-Pin P la s tic SO J from a single + 5-volt pow er supply. Advanced polycide

PD42S4400

Abstract: NEC 424400-70 77ti NEC 424400 uPD424400 NEC 424400-60 424400-70
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jitP D 4 2 S 4 4 0 0 , 4 2 4 4 0 0 4M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE D escription The |iPD42S4400. 424400 are 1,048,576 words by 4 bits C M O S dynamic RAM s. The fast page mode capability realize high speed access and low power consumption.

PE4244

Abstract: PE4244-EK peregrine
Contextual Info: PRELIMINARY SPECIFICATION PE4244 SPDT MOSFET RF Switch Product Description The PE4244 MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This switch integrates on-board CMOS control logic with a low voltage CMOS compatible control input. Using a +3-volt nominal

Contextual Info: Product Specification PE4244 SPDT UltraCMOS RF Switch Product Description 10 – 3000 MHz The PE4244 UltraCMOS® RF switch is designed to cover a broad range of applications from 10 to 3000 MHz. This switch integrates on-board CMOS control logic with a low voltage

Contextual Info: NEC Electronics Inc. fiPD424400, 424400A/L, 42S4400A/L 1,048,576 X 4-Bit Dynamic CMOS RAM Description Features F IMlW The devices listed below are fast-page dynamic RAMs organized as 1,048,576 words by 4 bits and designed to operate from a single power supply.

d424400

Abstract: NEC 424400 JUPD424400 sm50 uPD424400
Contextual Info: W Mid W NEC Electronics Inc. fiPD424400, 424400A/L, 42S4400A/L 1,048,576 X 4-Bit Dynamic CMOS RAM Description Features The devices listed below are fast-page dynamic RAMs organized as 1,048,576 words by 4 bits and designed to operate from a single power supply.

Contextual Info: Product Specification PE4244 SPDT UltraCMOS RF Switch Product Description 10 – 3000 MHz The PE4244 UltraCMOS® RF switch is designed to cover a broad range of applications from 10 to 3000 MHz. This switch integrates on-board CMOS control logic with a low voltage

Contextual Info: Product Specification PE4244 SPDT UltraCMOS RF Switch Product Description 10 – 3000 MHz The PE4244 UltraCMOS® RF switch is designed to cover a broad range of applications from 10 to 3000 MHz. This switch integrates on-board CMOS control logic with a low voltage

PE4244

Abstract: PE4244-EK
Contextual Info: Product Specification PE4244 SPDT UltraCMOS RF Switch Product Description Features The PE4244 UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This switch integrates on-board CMOS control logic with a low voltage

D42S4400

Abstract: NEC 424400
Contextual Info: N EC ELECTRONICS INC NEC Electronics Inc. b l E D • b4B7SB5 DQ33b3G T3? M N E C E pPD424400, 424400A/L, 42S4400A/L 1,048,576 X 4-Bit Dynamic CMOS RAM T - H í - X j » -/< ? Description Features The devices listed below are fast-page dynamic RAMs organized as 1,048,576 words by 4 bits and designed to

uPD424400

Abstract: d424400 *424400v DD41A
Contextual Info: [• r b4B7SES QDMlôbb T7Ô AT A SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION The /¿PD424400 is a 1 048 576 w ords by 4 bits dynam ic CMOS RAM. The fast page mode capability realize high speed access and lo w power consum ption.

MC-421000A9BA-60

Abstract: 30-pin simm memory BA 508 C0
Contextual Info: blE D SEC NEC Electronics Inc. N E C b H 27SES D D 3 M2 4 C1 277 INECE MC-421000A9 1,048,576 X 9-Bit Dynamic CMOS RAM Module S - ELECTRONICS INC Description Pin Configurations The MC-421000A9 is a fast-page 1,048,576-word by 9-bit dynamic RAM module designed to operate from a

60L9

Contextual Info: NEC ELECTRONICS INC MbE D □ b427525 D03Eb45 □ E3NECE 7 ^ #iPD424400 1,048,576 x4-Bït Dynamic CMOS RAM 1 NEC Electronics Inc. February 19&1 Description The ¿/PD424400 is a fast-page dynamic RAM organized as 1,048,576 words by 4 bits and designed to operate

7207 irc

Abstract: AM99C641 AM99C641-25 AM99C641-35 AM99CL641 CD3022
Contextual Info: Am99C641 / Am99CL641 £1 65,536 x 1 Static Read/Write Random-Access Memory > DISTINCTIVE CHARACTERISTICS H igh-perform ance C M O S circuit design and p rocess High Speed - a ccess tim es a s fa st as 25 ns S ingle 5-V ± 1 0 % pow er-supply operation Low pow e r - 550 m W active